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Energy Express

  • Editor: Christian Seassal
  • Vol. 22, Iss. S5 — Aug. 25, 2014
  • pp: A1380–A1388

Single chip super broadband InGaN/GaN LED enabled by nanostructured substrate

Stuart (Shizhuo) Yin, Chao Wang, Wenbin Zhu, Jimmy Yao, Jun Zou, Xiaoyan Lin, and Claire Luo  »View Author Affiliations

Optics Express, Vol. 22, Issue S5, pp. A1380-A1388 (2014)

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A new type of LED, single chip super broadband InGaN/GaN LED is presented in this paper. The LED is composed of an InGaN/GaN quantum well layer deposited on the nanostructured sapphire substrate, inscribed by femtosecond laser ablation. The super broadband emission is enabled due to the large variation of indium composition in a small local area so that different wavelengths can be emitted over a small area and the summation of these different emission wavelengths forms super broadband emission, which covers the entire visible spectral range. The result of this paper represents a major technological advance in white light LED lighting because it enables single chip white LED lighting without the need of phosphor down converter that can significantly improve the efficiency without the Stokes loss and reduce the cost.

© 2014 Optical Society of America

OCIS Codes
(230.0230) Optical devices : Optical devices
(230.3670) Optical devices : Light-emitting diodes

ToC Category:
Light-Emitting Diodes

Original Manuscript: July 8, 2014
Revised Manuscript: July 30, 2014
Manuscript Accepted: July 30, 2014
Published: August 22, 2014

Stuart (Shizhuo) Yin, Chao Wang, Wenbin Zhu, Jimmy Yao, Jun Zou, Xiaoyan Lin, and Claire Luo, "Single chip super broadband InGaN/GaN LED enabled by nanostructured substrate," Opt. Express 22, A1380-A1388 (2014)

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