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Influence of black silicon surfaces on the performance of back-contacted back silicon heterojunction solar cells

Johannes Ziegler, Jan Haschke, Thomas Käsebier, Lars Korte, Alexander N. Sprafke, and Ralf B. Wehrspohn

Open Access Open Access

Abstract

The influence of different black silicon (b-Si) front side textures prepared by inductively coupled reactive ion etching (ICP-RIE) on the performance of back-contacted back silicon heterojunction (BCB-SHJ) solar cells is investigated in detail regarding their optical performance, black silicon surface passivation and internal quantum efficiency. Under optimized conditions the effective minority carrier lifetime measured on black silicon surfaces passivated with Al2O3 can be higher than lifetimes measured for the SiO2/SiNx passivation stack used in the reference cells with standard KOH textures. However, to outperform the electrical current of silicon back-contact cells, the black silicon back-contact cell process needs to be optimized with aspect to chemical and thermal stability of the used dielectric layer combination on the cell.

© 2014 Optical Society of America

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Figures (6)
Fig. 1
Fig. 1 Schematic cross section of the back side contacted silicon PRECASH solar cells. Left: Random pyramid texture passivated by SiO2/SiNx (reference). Right: ICP-RIE texture passivated by Al2O3. Bottom: Schematic back side.

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Fig. 2
Fig. 2 SEM pictures of the structured surfaces after the cell process. Frontsides achieved by ICP-RIE process with high process pressure (a) and with low process pressure (b).

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Fig. 3
Fig. 3 Internal quantum efficiency (IQE) and reflection measurements of the fabricated PRECASH solar cells. ABSF is the BSF to emitter the contact area in percent of the meassured cell

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Fig. 4
Fig. 4 Effective minority carrier lifetime τeff of silicon wafers after passivation with 20 nm Al2O3 on both sides. Shown are samples with texture A and B on the frontside before and after the deposition of the a-Si:H(n) emitter layer at the backside (wafer resestivity 2.7Ωcm meassurements are done in transient mode). Additionally, the lifetime measurement of a reference sample with a pyramidal texture on both sides and passivated by SiO2/SiNx stacks is plotted (wafer resestivity 1.4Ωcm meassurement done in generalized mode optical constant 0.85).

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Fig. 5
Fig. 5 Illuminated IV curves of a reference cell measured at 25 °C (Jsc = 38.3mA × cm−2, Voc = 631mV, FF = 59.2, η = 14.3 %) and of a cell with texture A measured at 31.1°C (Jsc = 35.1mA × cm−2, Voc = 562mV, FF = 57, η = 11.2 %).

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Fig. 6
Fig. 6 Illuminated IV curves of a reference cell measured at 25.6 °C (Jsc = 37.6mA × cm−2, Voc = 607mV, FF = 54.8, η = 12.5 %) and of a cell with texture B measured at 30.4°C (Jsc = 34.95mA × cm−2, Voc = 525mV, FF = 56.2, η = 10.31 %).

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