Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group

Size dependence of silica nanospheres embedded in 385 nm ultraviolet light-emitting diodes on a far-field emission pattern

Open Access Open Access

Abstract

We demonstrate that the use of silica nanospheres (SNs) with sizes close to the emission wavelength of light-emitting diodes (LEDs) can enhance the light output power and manipulate the far-field emission pattern. Near-ultraviolet (NUV)-LEDs grown on a patterned sapphire substrate embedded with 300 nm SNs show a three times higher light output power than that without SNs, when measured through the top side. For far-field emission measurements, the LEDs embedded with 300 nm SNs show the significant increase of front emission due to the improved crystal quality of epitaxial films as well as the increase of Mie scattering effect of SNs. These experimental results indicate the important role of the size of embedded SNs in enhancing the light output power for NUV-LEDs.

© 2014 Optical Society of America

Full Article  |  PDF Article
More Like This
Enhanced light emission in blue light-emitting diodes by multiple Mie scattering from embedded silica nanosphere stacking layers

Young Jae Park, Ji Hye Kang, Hee Yun Kim, Volodymyr V. Lysak, S. Chandramohan, Jae Hyoung Ryu, Hyun Kyu Kim, Nam Han, Hyun Jeong, Mun Seok Jeong, and Chang-Hee Hong
Opt. Express 19(23) 23429-23435 (2011)

Effect of embedded silica nanospheres on improving the performance of InGaN/GaN light-emitting diodes

Young Jae Park, Hee Yun Kim, Jae Hyoung Ryu, Hyun Kyu Kim, Ji Hye Kang, Nam Han, Min Han, Hyun Jeong, Mun Seok Jeong, and Chang-Hee Hong
Opt. Express 19(3) 2029-2036 (2011)

Self-textured oxide structure for improved performance of 365 nm ultraviolet vertical-type light-emitting diodes

Kun-Ching Shen, Wen-Yu Lin, Han-Yu Lin, Ken-Yen Chen, and Dong-Sing Wuu
Opt. Express 22(15) 17600-17606 (2014)

Cited By

Optica participates in Crossref's Cited-By Linking service. Citing articles from Optica Publishing Group journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (5)

Fig. 1
Fig. 1 Schematic diagrams of key steps for fabricating SNs-embedded LED structures: (a) PSS substrate, (b) growth of inverted polygonal pyramid structures (IPPSs) grown on PSS, (c) self-assembled SNs on IPPSs, (d) the epilayer after re-growth.
Fig. 2
Fig. 2 SEM images of the (a) plan-view, (b) bird-view of IPPSs formed on PSS, and cross-sectional view of regrown GaN on (c) 300 nm and (d) 500 nm-SNs.
Fig. 3
Fig. 3 (a) FWHM values according to the size and concentration of the SNs solution and (b) diffuse reflectance according to wavelength for 300 nm and 500 nm SNE-LEDs and for the LED without SNs.
Fig. 4
Fig. 4 Light output power of three different LED chips versus forward injection current measured from (a) the front and (b) the back of the LED chips.
Fig. 5
Fig. 5 Far-field radiation patterns of the LED chip packaging.
Select as filters


Select Topics Cancel
© Copyright 2024 | Optica Publishing Group. All Rights Reserved