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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 22, Iss. 11 — Jun. 2, 2014
  • pp: 13022–13028

Sensitization of Er3+ ions in silicon rich oxynitride films: effect of thermal treatments

Lingbo Xu, Lu Jin, Dongsheng Li, and Deren Yang  »View Author Affiliations


Optics Express, Vol. 22, Issue 11, pp. 13022-13028 (2014)
http://dx.doi.org/10.1364/OE.22.013022


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Abstract

The optical properties of reactive co-sputtered erbium doped silicon rich oxynitride (Er:SRON) films are studied as a function of annealing temperatures (Ta). The sensitization mechanism of Er3+ is found to evolve with Ta: excess Si related localized states play the essential role in samples when Ta is below 700 °C, while silicon nanoclusters (Si-NCs) become the dominate sensitizers when Ta exceeds 800 °C. Our results show that higher density of sensitized Er3+ could be acquired via energy transfer from localized states, and thus provide an alternative way for the engineering of light sources based on Er:SRON.

© 2014 Optical Society of America

OCIS Codes
(160.5690) Materials : Rare-earth-doped materials
(250.5230) Optoelectronics : Photoluminescence
(310.6860) Thin films : Thin films, optical properties

ToC Category:
Materials

History
Original Manuscript: April 10, 2014
Revised Manuscript: May 12, 2014
Manuscript Accepted: May 13, 2014
Published: May 21, 2014

Citation
Lingbo Xu, Lu Jin, Dongsheng Li, and Deren Yang, "Sensitization of Er3+ ions in silicon rich oxynitride films: effect of thermal treatments," Opt. Express 22, 13022-13028 (2014)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-22-11-13022


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