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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 22, Iss. 11 — Jun. 2, 2014
  • pp: 13969–13974

Diode-pumped 1.5-1.6 μm laser operation in Er3+ doped YbAl3(BO3)4 microchip

Yujin Chen, Yanfu Lin, Yuqi Zou, Jianhua Huang, Xinghong Gong, Zundu Luo, and Yidong Huang  »View Author Affiliations


Optics Express, Vol. 22, Issue 11, pp. 13969-13974 (2014)
http://dx.doi.org/10.1364/OE.22.013969


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Abstract

Er3+ doped YbAl3(BO3)4 crystal with large absorption coefficient of 184 cm−1 at pump wavelength of 976 nm is a promising microchip gain medium of 1.5-1.6 μm laser. End-pumped by a 976 nm diode laser, 1.5-1.6 μm continuous-wave laser with maximum output power of 220 mW and slope efficiency of 8.1% was obtained at incident pump power of 4.54 W in a c-cut 200-μm-thick Er:YbAl3(BO3)4 microchip. When a Co2+:Mg0.4Al2.4O4 crystal was used as the saturable absorber, 1521 nm passively Q-switched pulse laser with about 0.19 μJ energy, 265 ns duration, and 96 kHz repetition rate was realized.

© 2014 Optical Society of America

OCIS Codes
(140.3500) Lasers and laser optics : Lasers, erbium
(140.3540) Lasers and laser optics : Lasers, Q-switched
(140.3580) Lasers and laser optics : Lasers, solid-state

ToC Category:
Lasers and Laser Optics

History
Original Manuscript: April 10, 2014
Revised Manuscript: May 15, 2014
Manuscript Accepted: May 19, 2014
Published: May 30, 2014

Citation
Yujin Chen, Yanfu Lin, Yuqi Zou, Jianhua Huang, Xinghong Gong, Zundu Luo, and Yidong Huang, "Diode-pumped 1.5-1.6 μm laser operation in Er3+ doped YbAl3(BO3)4 microchip," Opt. Express 22, 13969-13974 (2014)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-22-11-13969


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