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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 22, Iss. 13 — Jun. 30, 2014
  • pp: 16310–16321

Resolution enhancement for advanced mask aligner lithography using phase-shifting photomasks

T. Weichelt, U. Vogler, L. Stuerzebecher, R. Voelkel, and U. D. Zeitner  »View Author Affiliations


Optics Express, Vol. 22, Issue 13, pp. 16310-16321 (2014)
http://dx.doi.org/10.1364/OE.22.016310


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Abstract

The application of the phase-shift method allows a significant resolution enhancement for proximity lithography in mask aligners. Typically a resolution of 3 µm (half-pitch) at a proximity distance of 30 µm is achieved utilizing binary photomasks. By using an alternating aperture phase shift photomask (AAPSM), a resolution of 1.5 µm (half-pitch) for non-periodic lines and spaces pattern was demonstrated at 30 µm proximity gap. In a second attempt a diffractive photomask design for an elbow pattern having a half-pitch of 2 µm was developed with an iterative design algorithm. The photomask was fabricated by electron-beam lithography and consists of binary amplitude and phase levels.

© 2014 Optical Society of America

OCIS Codes
(050.1940) Diffraction and gratings : Diffraction
(110.3960) Imaging systems : Microlithography
(110.5220) Imaging systems : Photolithography
(220.3740) Optical design and fabrication : Lithography
(220.4000) Optical design and fabrication : Microstructure fabrication

ToC Category:
Imaging Systems

History
Original Manuscript: March 3, 2014
Revised Manuscript: May 16, 2014
Manuscript Accepted: May 21, 2014
Published: June 24, 2014

Citation
T. Weichelt, U. Vogler, L. Stuerzebecher, R. Voelkel, and U. D. Zeitner, "Resolution enhancement for advanced mask aligner lithography using phase-shifting photomasks," Opt. Express 22, 16310-16321 (2014)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-22-13-16310


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References

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