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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 22, Iss. 14 — Jul. 14, 2014
  • pp: 17440–17447

Surface chemical and local electronic properties of AlxGa1-xN epi-layers grown by MOCVD

Shuchang Wang, Xiong Zhang, Zhe Chuan Feng, and Yiping Cui  »View Author Affiliations


Optics Express, Vol. 22, Issue 14, pp. 17440-17447 (2014)
http://dx.doi.org/10.1364/OE.22.017440


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Abstract

The surface chemical state and local electronic structure of AlxGa1-xN (x = 0~0.45) epi-layers have been systematically investigated by X-ray photoelectron spectroscopy (XPS) and extended X-ray absorption fine structure (EXAFS) spectroscopy. The results show that the surface of AlxGa1-xN is a composite of oxide and nitride of gallium and aluminum. In addition, it was identified that the Ga-O components were converted to Al-O components when the AlxGa1-xN sample was exposed to air. The EXAFS analysis also reveals that the Ga-N and Ga-Al bond lengths are independent of the Al composition, whereas the Ga-Ga bond length is a function of Al composition.

© 2014 Optical Society of America

OCIS Codes
(160.6000) Materials : Semiconductor materials
(340.6720) X-ray optics : Synchrotron radiation
(240.6675) Optics at surfaces : Surface photoemission and photoelectron spectroscopy

ToC Category:
Materials

History
Original Manuscript: May 19, 2014
Revised Manuscript: June 24, 2014
Manuscript Accepted: July 1, 2014
Published: July 10, 2014

Citation
Shuchang Wang, Xiong Zhang, Zhe Chuan Feng, and Yiping Cui, "Surface chemical and local electronic properties of AlxGa1-xN epi-layers grown by MOCVD," Opt. Express 22, 17440-17447 (2014)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-22-14-17440


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