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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 22, Iss. 16 — Aug. 11, 2014
  • pp: 18843–18848

Single CdTe microwire photodetectors grown by close-spaced sublimation method

Gwangseok Yang, Byung-Jae Kim, Donghwan Kim, and Jihyun Kim  »View Author Affiliations


Optics Express, Vol. 22, Issue 16, pp. 18843-18848 (2014)
http://dx.doi.org/10.1364/OE.22.018843


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Abstract

We demonstrate single CdTe microwire field-effect transistors (FETs) that are highly sensitive to ultraviolet (UV) light. Dense CdTe microwires were catalytically grown using a close-spaced sublimation system. Structural, morphological and transport properties in conjunction with the optoelectronic properties were systemically investigated. CdTe microwire FETs exhibited p-type behaviors with field-effect mobilities up to 1.1 × 10−3 cm2 V−1 s−1. Optoelectronic properties of our CdTe microwire FETs were studied under dark and UV-illumination conditions, where photoresponse was highly dependent on the back-gate bias conditions. Our CdTe microwire FET-based photodetectors are promising for high-performance micro-optoelectronic applications.

© 2014 Optical Society of America

OCIS Codes
(040.5160) Detectors : Photodetectors
(160.6000) Materials : Semiconductor materials
(350.6050) Other areas of optics : Solar energy

ToC Category:
Detectors

History
Original Manuscript: June 12, 2014
Manuscript Accepted: July 10, 2014
Published: July 28, 2014

Citation
Gwangseok Yang, Byung-Jae Kim, Donghwan Kim, and Jihyun Kim, "Single CdTe microwire photodetectors grown by close-spaced sublimation method," Opt. Express 22, 18843-18848 (2014)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-22-16-18843


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