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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 22, Iss. 16 — Aug. 11, 2014
  • pp: 18860–18869

Enhancing optical characteristics of InAs/InGaAsSb quantum dot structures with long-excited state emission at 1.31 μm

Wei-Sheng Liu, Hsin-Lun Tseng, and Po-Chen Kuo  »View Author Affiliations


Optics Express, Vol. 22, Issue 16, pp. 18860-18869 (2014)
http://dx.doi.org/10.1364/OE.22.018860


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Abstract

In this study, the optical properties of InAs quantum dots (QDs) with various strain-reducing layers (SRLs) of GaAsSb and InGaAsSb are characterized using photoluminescence (PL) and time-resolved PL (TRPL) measurements. The room-temperature PL results for the InAs/InGaAsSb QDs revealed stronger emission intensities than InAs QDs capped with an GaAs1-xSbx (x = 20%)SRL, although both samples were grown under the same Sb flux during the molecular beam epitaxy process. The InAs/InGaAsSb QDs showed a significant elongation of emission wavelengths to 1450 and 1310 nm for the ground and first-excited state at room temperature. The energy band alignment of the InAs QD heterostructures was found tailoring from type II to type I as the GaAsSb SRL was replaced by InGaAsSb layer, which improved the radiative efficiency and was verified by power-dependent PL and TRPL measurements. Post-growth rapid thermal annealing was applied on the InAs/InGaAsSb QDs to further enhance the QD quality and PL emission efficiency. The greatly improved PL intensity, reduced linewidth, shortened radiative lifetime, with increasing annealing temperature were demonstrated, and InAs/InGaAsSb QDs exhibited enhanced optical characteristics for long-wavelength emission applications.

© 2014 Optical Society of America

OCIS Codes
(160.6000) Materials : Semiconductor materials
(230.5590) Optical devices : Quantum-well, -wire and -dot devices
(250.5230) Optoelectronics : Photoluminescence
(250.5960) Optoelectronics : Semiconductor lasers
(250.5590) Optoelectronics : Quantum-well, -wire and -dot devices

ToC Category:
Optoelectronics

History
Original Manuscript: June 12, 2014
Revised Manuscript: July 18, 2014
Manuscript Accepted: July 18, 2014
Published: July 28, 2014

Citation
Wei-Sheng Liu, Hsin-Lun Tseng, and Po-Chen Kuo, "Enhancing optical characteristics of InAs/InGaAsSb quantum dot structures with long-excited state emission at 1.31 μm," Opt. Express 22, 18860-18869 (2014)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-22-16-18860


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