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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 22, Iss. 16 — Aug. 11, 2014
  • pp: 19411–19422

Influence and adjustment of carrier lifetimes in InGaAs/InAlAs photoconductive pulsed terahertz detectors: 6 THz bandwidth and 90dB dynamic range

Roman J.B. Dietz, Björn Globisch, Helmut Roehle, Dennis Stanze, Thorsten Göbel, and Martin Schell  »View Author Affiliations


Optics Express, Vol. 22, Issue 16, pp. 19411-19422 (2014)
http://dx.doi.org/10.1364/OE.22.019411


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Abstract

We investigate the influence of Beryllium (Be) doping on the performance of photoconductive THz detectors based on molecular beam epitaxy (MBE) of low temperature (LT) grown In0.53Ga0.47As/In0.52Al0.48As multilayer heterostructures (MLHS). We show how the optical excitation power affects carrier lifetime, detector signal, dynamic range and bandwidth in THz time domain spectroscopy (TDS) in dependence on Be-doping concentration. For optimal doping we measured a THz bandwidth in excess of 6 THz and a dynamic range of up to 90 dB.

© 2014 Optical Society of America

OCIS Codes
(260.5150) Physical optics : Photoconductivity
(320.7130) Ultrafast optics : Ultrafast processes in condensed matter, including semiconductors
(040.2235) Detectors : Far infrared or terahertz
(300.6495) Spectroscopy : Spectroscopy, teraherz

ToC Category:
Detectors

History
Original Manuscript: May 19, 2014
Revised Manuscript: July 4, 2014
Manuscript Accepted: July 7, 2014
Published: August 4, 2014

Citation
Roman J.B. Dietz, Björn Globisch, Helmut Roehle, Dennis Stanze, Thorsten Göbel, and Martin Schell, "Influence and adjustment of carrier lifetimes in InGaAs/InAlAs photoconductive pulsed terahertz detectors: 6 THz bandwidth and 90dB dynamic range," Opt. Express 22, 19411-19422 (2014)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-22-16-19411


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References

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