OSA's Digital Library

Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 22, Iss. 16 — Aug. 11, 2014
  • pp: 19589–19594

Effect of injection current on the optical polarization of AlGaN-based ultraviolet light-emitting diodes

Mengjun Hou, Zhixin Qin, Chenguang He, Jun’an Cai, Xinqiang Wang, and Bo Shen  »View Author Affiliations


Optics Express, Vol. 22, Issue 16, pp. 19589-19594 (2014)
http://dx.doi.org/10.1364/OE.22.019589


View Full Text Article

Enhanced HTML    Acrobat PDF (1086 KB)





Browse Journals / Lookup Meetings

Browse by Journal and Year


   


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

Share
Citations

Abstract

The injection current dependence of optical polarization of ultraviolet (UV) light-emitting diodes (LEDs) emitting at wavelength of 310 nm and 277 nm was investigated by electroluminescence (EL) measurements. For both diodes, it was found that the degree of polarization (DOP) decreased obviously as the injection current increased. We attribute the decrease in DOP to the different changing trend of the intensity of the light emission from transverse electric (TE) polarization (E⊥c) and transverse magnetic (TM) polarization (E∥c) as the injected carriers occupy higher states above k = 0 with increasing the injection current. For the 277 nm LED, even the polarization switching from TE to TM mode was observed.

© 2014 Optical Society of America

OCIS Codes
(230.0230) Optical devices : Optical devices
(230.3670) Optical devices : Light-emitting diodes

ToC Category:
Optoelectronics

History
Original Manuscript: May 26, 2014
Revised Manuscript: July 18, 2014
Manuscript Accepted: July 22, 2014
Published: August 6, 2014

Citation
Mengjun Hou, Zhixin Qin, Chenguang He, Jun’an Cai, Xinqiang Wang, and Bo Shen, "Effect of injection current on the optical polarization of AlGaN-based ultraviolet light-emitting diodes," Opt. Express 22, 19589-19594 (2014)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-22-16-19589


Sort:  Author  |  Year  |  Journal  |  Reset  

References

  1. K. Davitt, Y.-K. Song, W. Patterson Iii, A. V. Nurmikko, M. Gherasimova, J. Han, Y.-L. Pan, and R. K. Chang, “290 and 340 nm UV LED arrays for fluorescence detection from single airborne particles,” Opt. Express13(23), 9548–9555 (2005). [CrossRef] [PubMed]
  2. C. J. Collins, A. V. Sampath, G. A. Garrett, W. L. Sarney, H. Shen, M. Wraback, A. Y. Nikiforov, G. S. Cargill, and V. Dierolf, “Enhanced room-temperature luminescence efficiency through carrier localization in AlxGa1−xN alloys,” Appl. Phys. Lett.86(3), 031916 (2005). [CrossRef]
  3. M. A. Würtele, T. Kolbe, M. Lipsz, A. Külberg, M. Weyers, M. Kneissl, and M. Jekel, “Application of GaN-based ultraviolet-C light emitting diodes - UV LEDs - for water disinfection,” Water Res.45(3), 1481–1489 (2011). [CrossRef] [PubMed]
  4. H. Tsuzuki, F. Mori, K. Takeda, T. Ichikawa, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, H. Yoshida, M. Kuwabara, Y. Yamashita, and H. Kan, “High-performance UV emitter grown on high-crystalline-quality AlGaN underlying layer,” Phys. Status Solidi206(6), 1199–1204 (2009). [CrossRef]
  5. J. R. Grandusky, S. R. Gibb, M. C. Mendrick, and L. J. Schowalter, “Properties of Mid-Ultraviolet Light Emitting Diodes Fabricated from Pseudomorphic Layers on Bulk Aluminum Nitride Substrates,” Appl. Phys. Express3(7), 072103 (2010). [CrossRef]
  6. W. Sun, M. Shatalov, J. Deng, X. Hu, J. Yang, A. Lunev, Y. Bilenko, M. Shur, and R. Gaska, “Efficiency droop in 245–247 nm AlGaN light-emitting diodes with continuous wave 2 mW output power,” Appl. Phys. Lett.96(6), 061102 (2010). [CrossRef]
  7. H. Hirayama, Y. Tsukada, T. Maeda, and N. Kamata, “Marked Enhancement in the Efficiency of Deep-Ultraviolet AlGaN Light-Emitting Diodes by Using a Multiquantum-Barrier Electron Blocking Layer,” Appl. Phys. Express3(3), 031002 (2010). [CrossRef]
  8. M. Kneissl, T. Kolbe, C. Chua, V. Kueller, N. Lobo, J. Stellmach, A. Knauer, H. Rodriguez, S. Einfeldt, Z. Yang, N. M. Johnson, and M. Weyers, “Advances in group III-nitride-based deep UV light-emitting diode technology,” Semicond. Sci. Technol.26(1), 014036 (2011). [CrossRef]
  9. K. B. Nam, J. Li, M. L. Nakarmi, J. Y. Lin, and H. X. Jiang, “Unique optical properties of AlGaN alloys and related ultraviolet emitters,” Appl. Phys. Lett.84(25), 5264–5266 (2004). [CrossRef]
  10. H. Kawanishi, M. Senuma, and T. Nukui, “Anisotropic polarization characteristics of lasing and spontaneous surface and edge emissions from deep-ultraviolet (λ≈240 nm) AlGaN multiple-quantum-well lasers,” Appl. Phys. Lett.89(4), 041126 (2006). [CrossRef]
  11. T. Kolbe, A. Knauer, C. Chua, Z. Yang, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Optical polarization characteristics of ultraviolet (In)(Al)GaN multiple quantum well light emitting diodes,” Appl. Phys. Lett.97(17), 171105 (2010). [CrossRef]
  12. J. E. Northrup, C. L. Chua, Z. Yang, T. Wunderer, M. Kneissl, N. M. Johnson, and T. Kolbe, “Effect of strain and barrier composition on the polarization of light emission from AlGaN/AlN quantum wells,” Appl. Phys. Lett.100(2), 021101 (2012). [CrossRef]
  13. T. M. Altahtamouni, J. Y. Lin, and H. X. Jiang, “Optical polarization in c-plane Al-rich AlN/AlxGa1-xN single quantum wells,” Appl. Phys. Lett.101(4), 042103 (2012). [CrossRef]
  14. T. Kolbe, A. Knauer, C. Chua, Z. Yang, V. Kueller, S. Einfeldt, P. Vogt, N. M. Johnson, M. Weyers, and M. Kneissl, “Effect of temperature and strain on the optical polarization of (In)(Al)GaN ultraviolet light emitting diodes,” Appl. Phys. Lett.99(26), 261105 (2011). [CrossRef]
  15. T. K. Sharma, D. Naveh, and E. Towe, “Strain-driven light-polarization switching in deep ultraviolet nitride emitters,” Phys. Rev. B84(3), 035305 (2011). [CrossRef]
  16. C. Netzel, A. Knauer, and M. Weyers, “Impact of light polarization on photoluminescence intensity and quantum efficiency in AlGaN and AlInGaN layers,” Appl. Phys. Lett.101(24), 242102 (2012). [CrossRef]
  17. S. Fan, Z. Qin, C. He, X. Wang, B. Shen, and G. Zhang, “Strain effect on the optical polarization properties of c-plane Al₀.₂₆Ga₀.₇₄N/GaN superlattices,” Opt. Express22(6), 6322–6328 (2014). [CrossRef] [PubMed]
  18. S.-H. Park and J.-I. Shim, “Carrier density dependence of polarization switching characteristics of light emission in deep-ultraviolet AlGaN/AlN quantum well structures,” Appl. Phys. Lett.102(22), 221109 (2013). [CrossRef]
  19. Y. Taniyasu, M. Kasu, and T. Makimoto, “Radiation and polarization properties of free-exciton emission from AlN (0001) surface,” Appl. Phys. Lett.90(26), 261911 (2007). [CrossRef]
  20. R. G. Banal, M. Funato, and Y. Kawakami, “Optical anisotropy in [0001]-oriented AlxGa1−xN/AlN quantum wells (x>0.69),” Phys. Rev. B79(12), 121308 (2009). [CrossRef]
  21. P. Rinke, M. Winkelnkemper, A. Qteish, D. Bimberg, J. Neugebauer, and M. Scheffler, “Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN,” Phys. Rev. B77(7), 075202 (2008). [CrossRef]

Cited By

Alert me when this paper is cited

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.

Figures

Fig. 1 Fig. 2 Fig. 3
 
Fig. 4
 

« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited