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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 22, Iss. 2 — Jan. 27, 2014
  • pp: 1235–1242

Extraction of recombination coefficients and internal quantum efficiency of GaN-based light emitting diodes considering effective volume of active region

Garam Kim, Jang Hyun Kim, Euy Hwan Park, Donghoon Kang, and Byung-Gook Park  »View Author Affiliations


Optics Express, Vol. 22, Issue 2, pp. 1235-1242 (2014)
http://dx.doi.org/10.1364/OE.22.001235


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Abstract

An improved rate equation model for GaN-based LEDs considering the effective volume of the active region is proposed. Through numerical simulations, it is confirmed that the IQE, especially efficiency droop is related with small effective volume. Also, we confirmed that the effective volume is controlled by polarization charge, the barriers between the quantum wells, and current density. We also developed a fast and reliable method for extracting the recombination coefficients and the IQE of the GaN-based LEDs by measuring transient characteristics and considering the effective volume.

© 2014 Optical Society of America

OCIS Codes
(230.0250) Optical devices : Optoelectronics
(230.3670) Optical devices : Light-emitting diodes

ToC Category:
Optoelectronics

History
Original Manuscript: August 27, 2013
Revised Manuscript: November 21, 2013
Manuscript Accepted: January 2, 2014
Published: January 13, 2014

Citation
Garam Kim, Jang Hyun Kim, Euy Hwan Park, Donghoon Kang, and Byung-Gook Park, "Extraction of recombination coefficients and internal quantum efficiency of GaN-based light emitting diodes considering effective volume of active region," Opt. Express 22, 1235-1242 (2014)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-22-2-1235


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