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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 22, Iss. 2 — Jan. 27, 2014
  • pp: 1413–1425

Modeling of temperature and excitation dependences of efficiency in an InGaN light-emitting diode

Weng W. Chow  »View Author Affiliations

Optics Express, Vol. 22, Issue 2, pp. 1413-1425 (2014)

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The changes in excitation dependence of efficiency with temperature are modeled for a wurtzite InGaN light-emitting diode. The model incorporates bandstructure changes with carrier density because of screening of quantum-confined Stark effect. Bandstructure is computed by solving Poisson and k·p equations in the envelope approximation. The information is used in a dynamical model for populations in momentum-resolved electron and hole states. Application of the approach shows the interplay of quantum-well and barrier emissions giving rise to shape changes in efficiency versus current density with changing temperature, as observed in some experiments.

© 2014 Optical Society of America

OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(230.5590) Optical devices : Quantum-well, -wire and -dot devices
(250.5590) Optoelectronics : Quantum-well, -wire and -dot devices

ToC Category:

Original Manuscript: August 2, 2013
Revised Manuscript: October 22, 2013
Manuscript Accepted: November 21, 2013
Published: January 15, 2014

Weng W. Chow, "Modeling of temperature and excitation dependences of efficiency in an InGaN light-emitting diode," Opt. Express 22, 1413-1425 (2014)

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