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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 22, Iss. 2 — Jan. 27, 2014
  • pp: 1661–1666

Bias-assisted improved lateral photovoltaic effect observed in Cu2O nano-films

Biao Zhang, Liang Du, and Hui Wang  »View Author Affiliations

Optics Express, Vol. 22, Issue 2, pp. 1661-1666 (2014)

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A large lateral photovoltaic effect (LPE) has been observed in a Cu2O/Si heterojunction structure when its surface is illuminated by a laser. Moreover, with external bias voltage, the maximal LPE sensitivity can reach up to 1114 mV/mm, which is almost 10 times larger compared with its initial non-biased value of 113 mV/mm. We ascribe this phenomenon mainly to the effect of the increased photo-generated holes caused by the bias. Giant output voltage and high sensitivity suggest the potential of Cu2O nano-films could be used in a wide variety of applications for position-sensitive photodetectors.

© 2014 Optical Society of America

OCIS Codes
(040.5160) Detectors : Photodetectors
(040.5350) Detectors : Photovoltaic
(310.6845) Thin films : Thin film devices and applications

ToC Category:

Original Manuscript: November 12, 2013
Revised Manuscript: December 5, 2013
Manuscript Accepted: December 20, 2013
Published: January 16, 2014

Biao Zhang, Liang Du, and Hui Wang, "Bias-assisted improved lateral photovoltaic effect observed in Cu2O nano-films," Opt. Express 22, 1661-1666 (2014)

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