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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 22, Iss. 3 — Feb. 10, 2014
  • pp: 2536–2544

Stimulated emission in GaN-based laser diodes far below the threshold region

Ding Li, Hua Zong, Wei Yang, Liefeng Feng, Juan He, Weimin Du, Cunda Wang, Ya-Hong Xie, Zhijian Yang, Bo Shen, Guoyi Zhang, and Xiaodong Hu  »View Author Affiliations


Optics Express, Vol. 22, Issue 3, pp. 2536-2544 (2014)
http://dx.doi.org/10.1364/OE.22.002536


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Abstract

We identify that the stimulated emission of GaN laser diodes (LDs) emerges far below the traditionally recognized threshold from both optical and electrical experiments. Below the threshold, the linear-polarized stimulated emission has been the dominating part of overall emission and closely related to resonant cavity. Its intensity increases super linearly with current while that of spontaneous emission increases almost linearly. Moreover, the separation of quasi-Fermi levels of electrons and holes across the active region has already exceeded the photon emission energy, namely, realized the population-inversion.

© 2014 Optical Society of America

OCIS Codes
(140.2020) Lasers and laser optics : Diode lasers
(140.3430) Lasers and laser optics : Laser theory
(140.5960) Lasers and laser optics : Semiconductor lasers
(140.3295) Lasers and laser optics : Laser beam characterization

ToC Category:
Lasers and Laser Optics

History
Original Manuscript: December 2, 2013
Revised Manuscript: January 17, 2014
Manuscript Accepted: January 19, 2014
Published: January 29, 2014

Citation
Ding Li, Hua Zong, Wei Yang, Liefeng Feng, Juan He, Weimin Du, Cunda Wang, Ya-Hong Xie, Zhijian Yang, Bo Shen, Guoyi Zhang, and Xiaodong Hu, "Stimulated emission in GaN-based laser diodes far below the threshold region," Opt. Express 22, 2536-2544 (2014)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-22-3-2536


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