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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 22, Iss. 3 — Feb. 10, 2014
  • pp: 3234–3243

Fluence and polarisation dependence of GaAs based Lateral Photo-Dember terahertz emitters

D. McBryde, M. E. Barnes, S. A. Berry, P. Gow, H. E. Beere, D. A. Ritchie, and V. Apostolopoulos  »View Author Affiliations

Optics Express, Vol. 22, Issue 3, pp. 3234-3243 (2014)

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We characterise THz output of lateral photo-Dember (LPD) emitters based on semi-insulating (SI), unannealed and annealed low temperature grown (LTG) GaAs. Saturation of THz pulse power with optical fluence is observed, with unannealed LTG GaAs showing highest saturation fluence at 1.1 ± 0.1 mJ cm−2. SI-GaAs LPD emitters show a flip in signal polarity with optical fluence that is attributed to THz emission from the metal-semiconductor contact. Variation in optical polarisation affects THz pulse power that is attributed to a local optical excitation near the metal contact.

© 2014 Optical Society of America

OCIS Codes
(320.7130) Ultrafast optics : Ultrafast processes in condensed matter, including semiconductors
(300.6495) Spectroscopy : Spectroscopy, teraherz

ToC Category:
Terahertz Optics

Original Manuscript: November 8, 2013
Revised Manuscript: December 13, 2013
Manuscript Accepted: January 27, 2014
Published: February 4, 2014

D. McBryde, M. E. Barnes, S. A. Berry, P. Gow, H. E. Beere, D. A. Ritchie, and V. Apostolopoulos, "Fluence and polarisation dependence of GaAs based Lateral Photo-Dember terahertz emitters," Opt. Express 22, 3234-3243 (2014)

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