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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 22, Iss. 3 — Feb. 10, 2014
  • pp: 3585–3592

Growth of low-defect-density nonpolar a-plane GaN on r-plane sapphire using pulse NH3 interrupted etching

Ji-Su Son, Yoshio Honda, and Hiroshi Amano  »View Author Affiliations

Optics Express, Vol. 22, Issue 3, pp. 3585-3592 (2014)

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Nonpolar a-plane (11-20) GaN (a-GaN) layers with low overall defect density and high crystalline quality were grown on r-plane sapphire substrates using etched a-GaN. The a-GaN layer was etched by pulse NH3 interrupted etching. Subsequently, a 2-µm-thick Si-doped a-GaN layer was regrown on the etched a-GaN layer. A fully coalescent n-type a-GaN layer with a low threading dislocation density (~7.5 × 108 cm−2) and a low basal stacking fault density (~1.8 × 105 cm−1) was obtained. Compared with a planar sample, the full width at half maximum of the (11-20) X-ray rocking curve was significantly decreased to 518 arcsec along the c-axis direction and 562 arcsec along the m-axis direction.

© 2014 Optical Society of America

OCIS Codes
(230.0230) Optical devices : Optical devices
(230.3670) Optical devices : Light-emitting diodes

ToC Category:

Original Manuscript: December 16, 2013
Revised Manuscript: January 25, 2014
Manuscript Accepted: February 3, 2014
Published: February 6, 2014

Ji-Su Son, Yoshio Honda, and Hiroshi Amano, "Growth of low-defect-density nonpolar a-plane GaN on r-plane sapphire using pulse NH3 interrupted etching," Opt. Express 22, 3585-3592 (2014)

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