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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 22, Iss. 4 — Feb. 24, 2014
  • pp: 3811–3817

High-quality planar light emitting diode formed by induced two-dimensional electron and hole gases

Van-Truong Dai, Sheng-Di Lin, Shih-Wei Lin, Yi-Shan Lee, Yin-Jie Zhang, Liang-Chen Li, and Chien-Ping Lee  »View Author Affiliations

Optics Express, Vol. 22, Issue 4, pp. 3811-3817 (2014)

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A high-quality planar two-dimensional p-i-n light emitting diode in an entirely undoped GaAs/AlGaAs quantum well has been fabricated by using conventional lithography process. With twin gate design, two-dimensional electron and hold gases can be placed closely on demand. The electroluminescence of the device exhibit high stability and clear transition peaks so it is promising for applications on electrically-driven single photon sources.

© 2014 Optical Society of America

OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(230.5590) Optical devices : Quantum-well, -wire and -dot devices

ToC Category:

Original Manuscript: November 4, 2013
Revised Manuscript: December 19, 2013
Manuscript Accepted: January 8, 2014
Published: February 11, 2014

Van-Truong Dai, Sheng-Di Lin, Shih-Wei Lin, Yi-Shan Lee, Yin-Jie Zhang, Liang-Chen Li, and Chien-Ping Lee, "High-quality planar light emitting diode formed by induced two-dimensional electron and hole gases," Opt. Express 22, 3811-3817 (2014)

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