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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 22, Iss. 4 — Feb. 24, 2014
  • pp: 4115–4122

Carrier transfer and thermal escape in CdTe/ZnTe quantum dots

Minh Tan Man and Hong Seok Lee  »View Author Affiliations


Optics Express, Vol. 22, Issue 4, pp. 4115-4122 (2014)
http://dx.doi.org/10.1364/OE.22.004115


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Abstract

We report on the carrier transfer and thermal escape in CdTe/ZnTe quantum dots (QDs) grown on a GaAs substrate. The significant emission-energy-dependent decay time at high excitation intensity (35 W/cm2) is attributed to the lateral transfer of carriers in the QDs. At low temperature (< 35 K) and low emission energy (< 2.168 eV), a thermally activated transition occurs between two different states separated by approximately 9 meV, while the main contribution to nonradiative processes is the thermal escape from QDs that is assisted by carrier scattering via the emission of longitudinal phonons through the excited QD states at high temperature, with energies of approximately 19 meV.

© 2014 Optical Society of America

OCIS Codes
(160.4760) Materials : Optical properties
(260.3800) Physical optics : Luminescence
(300.6500) Spectroscopy : Spectroscopy, time-resolved
(250.5590) Optoelectronics : Quantum-well, -wire and -dot devices

ToC Category:
Materials

History
Original Manuscript: November 13, 2013
Revised Manuscript: January 24, 2014
Manuscript Accepted: January 24, 2014
Published: February 14, 2014

Virtual Issues
Vol. 9, Iss. 4 Virtual Journal for Biomedical Optics

Citation
Minh Tan Man and Hong Seok Lee, "Carrier transfer and thermal escape in CdTe/ZnTe quantum dots," Opt. Express 22, 4115-4122 (2014)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-22-4-4115


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