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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 22, Iss. 4 — Feb. 24, 2014
  • pp: 4779–4788

Sub-1 dB/cm submicrometer-scale amorphous silicon waveguide for backend on-chip optical interconnect

Ryohei Takei, Shoko Manako, Emiko Omoda, Youichi Sakakibara, Masahiko Mori, and Toshihiro Kamei  »View Author Affiliations

Optics Express, Vol. 22, Issue 4, pp. 4779-4788 (2014)

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We demonstrate a submicrometer-scale hydrogenated amorphous silicon (a-Si:H) waveguide with a record low propagation loss of 0.60 ± 0.02 dB/cm because of the very low infrared optical absorption of our low defect a-Si:H film, the optimized waveguide structure and the fabrication process. The waveguide has a core with a thickness of 440 nm and a width of 780 nm that underlies a 100-nm-thick ridge structure, and is fabricated by low-cost i-line stepper photolithography and with low-temperature processing at less than 350°C, making it compatible with the backend process of complementary metal oxide semiconductor (CMOS) fabrication.

© 2014 Optical Society of America

OCIS Codes
(230.7370) Optical devices : Waveguides
(310.6860) Thin films : Thin films, optical properties

ToC Category:
Integrated Optics

Original Manuscript: December 11, 2013
Revised Manuscript: January 24, 2014
Manuscript Accepted: February 14, 2014
Published: February 21, 2014

Ryohei Takei, Shoko Manako, Emiko Omoda, Youichi Sakakibara, Masahiko Mori, and Toshihiro Kamei, "Sub-1 dB/cm submicrometer-scale amorphous silicon waveguide for backend on-chip optical interconnect," Opt. Express 22, 4779-4788 (2014)

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