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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 22, Iss. 5 — Mar. 10, 2014
  • pp: 5927–5936

Design and numerical analysis of surface plasmon-enhanced fin Ge-Si light-emitting diode

Intae Jeong, Jooseong Kwon, Changsoon Kim, and Young June Park  »View Author Affiliations


Optics Express, Vol. 22, Issue 5, pp. 5927-5936 (2014)
http://dx.doi.org/10.1364/OE.22.005927


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Abstract

Heavily-doped strained germanium (Ge) can emit light efficiently thanks to its pseudo direct band gap characteristic. This makes Ge a good candidate for on-chip monolithic light sources in silicon (Si) photonics systems. We propose fin-shaped Ge-Si heterojunction light-emitting diode (LED) with metal gates, which can enhance light emission by coupling with surface plasmon resonant modes and modulate light emission from the LED. We verify these two aspects through numerical analysis and device simulations. We develop the method to find the optimal device structure and specific device dimensions to maximize the spontaneous emission rate enhancement. Also we find that the LED can be modulated by a gate voltage bias.

© 2014 Optical Society of America

OCIS Codes
(130.3120) Integrated optics : Integrated optics devices
(130.5990) Integrated optics : Semiconductors
(230.3670) Optical devices : Light-emitting diodes
(240.6680) Optics at surfaces : Surface plasmons
(260.5740) Physical optics : Resonance
(250.5403) Optoelectronics : Plasmonics

ToC Category:
Plasmonics

History
Original Manuscript: December 16, 2013
Revised Manuscript: February 14, 2014
Manuscript Accepted: February 20, 2014
Published: March 6, 2014

Citation
Intae Jeong, Jooseong Kwon, Changsoon Kim, and Young June Park, "Design and numerical analysis of surface plasmon-enhanced fin Ge-Si light-emitting diode," Opt. Express 22, 5927-5936 (2014)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-22-5-5927


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