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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 22, Iss. 6 — Mar. 24, 2014
  • pp: 6322–6328

Strain effect on the optical polarization properties of c-plane Al0.26Ga0.74N/GaN superlattices

Shunfei Fan, Zhixin Qin, Chenguang He, Xinqiang Wang, Bo Shen, and Guoyi Zhang  »View Author Affiliations

Optics Express, Vol. 22, Issue 6, pp. 6322-6328 (2014)

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A new approach to realize ultraviolet (UV) light emitting diodes (LEDs) is using AlN/GaN or AlxGa1-xN/GaN SL structure as active layers. Effect of a uniaxial strain on the degree of polarization (DOP) of Al0.26Ga0.74N/GaN superlattices (SLs) grown on c-plane sapphire substrates has been investigated. Compared with AlN/AlxGa1-xN quantum wells, the DOP of the light emission from Al0.26Ga0.74N/GaN SLs shows an opposite variation tendency with in-plane strain and quantum confinement. The results would be helpful to the structural design of c-plane deep-UV and UVA LEDs to enhance surface emission.

© 2014 Optical Society of America

OCIS Codes
(160.4760) Materials : Optical properties
(160.6000) Materials : Semiconductor materials

ToC Category:

Original Manuscript: November 13, 2013
Revised Manuscript: January 21, 2014
Manuscript Accepted: January 26, 2014
Published: March 11, 2014

Shunfei Fan, Zhixin Qin, Chenguang He, Xinqiang Wang, Bo Shen, and Guoyi Zhang, "Strain effect on the optical polarization properties of c-plane Al0.26Ga0.74N/GaN superlattices," Opt. Express 22, 6322-6328 (2014)

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