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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 22, Iss. 6 — Mar. 24, 2014
  • pp: 7261–7268

Fringe-field carrier-depletion modulators with high modulation efficiency and low free carrier absorption

Kai-Ning Ku and Ming-Chang M. Lee  »View Author Affiliations


Optics Express, Vol. 22, Issue 6, pp. 7261-7268 (2014)
http://dx.doi.org/10.1364/OE.22.007261


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Abstract

A high-speed carrier-depletion silicon modulator based on a fringe field pn junction design is presented. Due to the strong fringe field, the size of heavily doped regions can be reduced and away from the waveguide core, whereas large modulation efficiency is still accomplishable. The VπL is 1.8 V-cm and the phase shifter loss is 1.3 dB/mm. The figure of merit (FOM), defined by the product of VπL and phase shifter loss, is estimated to be 23.4 dB-V. The modulation speed and depth are 11.8 GHz and 8.1 dB, respectively, which is mainly limited by the mobility of poly-Si.

© 2014 Optical Society of America

OCIS Codes
(250.0250) Optoelectronics : Optoelectronics
(250.4110) Optoelectronics : Modulators

ToC Category:
Optoelectronics

History
Original Manuscript: February 19, 2014
Revised Manuscript: March 13, 2014
Manuscript Accepted: March 14, 2014
Published: March 20, 2014

Citation
Kai-Ning Ku and Ming-Chang M. Lee, "Fringe-field carrier-depletion modulators with high modulation efficiency and low free carrier absorption," Opt. Express 22, 7261-7268 (2014)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-22-6-7261


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