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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 22, Iss. 7 — Apr. 7, 2014
  • pp: 8367–8375

Independent variations of applied voltage and injection current for controlling the quantum-confined Stark effect in an InGaN/GaN quantum-well light-emitting diode

Horng-Shyang Chen, Zhan Hui Liu, Pei-Ying Shih, Chia-Ying Su, Chih-Yen Chen, Chun-Han Lin, Yu-Feng Yao, Yean-Woei Kiang, and C. C. Yang  »View Author Affiliations


Optics Express, Vol. 22, Issue 7, pp. 8367-8375 (2014)
http://dx.doi.org/10.1364/OE.22.008367


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Abstract

A reverse-biased voltage is applied to either device in the vertical configuration of two light-emitting diodes (LEDs) grown on patterned and flat Si (110) substrates with weak and strong quantum-confined Stark effects (QCSEs), respectively, in the InGaN/GaN quantum wells for independently controlling the applied voltage across and the injection current into the p-i-n junction in the lateral configuration of LED operation. The results show that more carrier supply is needed in the LED of weaker QCSE to produce a carrier screening effect for balancing the potential tilt in increasing the forward-biased voltage, when compared with the LED of stronger QCSE. The small spectral shift range in increasing injection current in the LED of weaker QCSE is attributed not only to the weaker QCSE, but also to its smaller device resistance such that a given increment of applied voltage leads to a larger increment of injection current. From a viewpoint of practical application in LED operation, by applying a reverse-biased voltage in the vertical configuration, the applied voltage and injection current in the lateral configuration can be independently controlled by adjusting the vertical voltage for keeping the emission spectral peak fixed.

© 2014 Optical Society of America

OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(250.5590) Optoelectronics : Quantum-well, -wire and -dot devices

ToC Category:
Optoelectronics

History
Original Manuscript: February 3, 2014
Manuscript Accepted: March 22, 2014
Published: April 1, 2014

Citation
Horng-Shyang Chen, Zhan Hui Liu, Pei-Ying Shih, Chia-Ying Su, Chih-Yen Chen, Chun-Han Lin, Yu-Feng Yao, Yean-Woei Kiang, and C. C. Yang, "Independent variations of applied voltage and injection current for controlling the quantum-confined Stark effect in an InGaN/GaN quantum-well light-emitting diode," Opt. Express 22, 8367-8375 (2014)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-22-7-8367


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