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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 22, Iss. 8 — Apr. 21, 2014
  • pp: 10026–10031

Ultraviolet electroluminescence from hetero p-n junction between a single ZnO microsphere and p-GaN thin film

Norihiro Tetsuyama, Koshi Fusazaki, Yasuaki Mizokami, Tetsuya Shimogaki, Mitsuhiro Higashihata, Daisuke Nakamura, and Tatsuo Okada  »View Author Affiliations

Optics Express, Vol. 22, Issue 8, pp. 10026-10031 (2014)

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We report ultraviolet electroluminescence from a hetero p-n junction between a single ZnO microsphere and p-GaN thin film. ZnO microspheres, which have high crystalline quality, have been synthesized by ablating a ZnO sintered target. It was found that synthesized ZnO microspheres had a high-optical property and exhibit the laser action in the whispering gallery mode under pulsed optical pumping. A hetero p-n junction was formed between the single ZnO microsphere/ p-GaN thin film, and a good rectifying property with a turn-on voltage of approximately 6 V was observed in I-V characteristic across the junction. Ultraviolet and visible electroluminescence were observed under forward bias.

© 2014 Optical Society of America

OCIS Codes
(230.0250) Optical devices : Optoelectronics
(250.0250) Optoelectronics : Optoelectronics
(350.3950) Other areas of optics : Micro-optics
(250.5960) Optoelectronics : Semiconductor lasers

ToC Category:

Original Manuscript: January 29, 2014
Revised Manuscript: March 2, 2014
Manuscript Accepted: March 4, 2014
Published: April 18, 2014

Norihiro Tetsuyama, Koshi Fusazaki, Yasuaki Mizokami, Tetsuya Shimogaki, Mitsuhiro Higashihata, Daisuke Nakamura, and Tatsuo Okada, "Ultraviolet electroluminescence from hetero p-n junction between a single ZnO microsphere and p-GaN thin film," Opt. Express 22, 10026-10031 (2014)

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