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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 22, Iss. 8 — Apr. 21, 2014
  • pp: 9150–9158

Metal-semiconductor-metal ion-implanted Si waveguide photodetectors for C-band operation

Brian Souhan, Richard R. Grote, Jeffrey B. Driscoll, Ming Lu, Aaron Stein, Hassaram Bakhru, and Richard M. Osgood, Jr.  »View Author Affiliations

Optics Express, Vol. 22, Issue 8, pp. 9150-9158 (2014)

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Metal-semiconductor-metal Si waveguide photodetectors are demonstrated with responsivities of greater than 0.5 A/W at a wavelength of 1550 nm for a device length of 1mm. Sub-bandgap absorption in the Si waveguide is achieved by creating divacancy lattice defects via Si+ ion implantation. The modal absorption coefficient of the ion-implanted Si waveguide is measured to be ≈185 dB/cm, resulting in a detector responsivity of ≈0.51 A/W at a 50V bias. The frequency response of a typical 1mm-length detector is measured to be 2.6 GHz, with simulations showing that a frequency response of 9.8 GHz is achievable with an optimized contact configuration and bias voltage of 15V. Due to the ease with which these devices can be fabricated, and their potential for high performance, these detectors are suitable for various applications in Si-based photonic integrated circuits.

© 2014 Optical Society of America

OCIS Codes
(040.5160) Detectors : Photodetectors
(040.6040) Detectors : Silicon
(130.3120) Integrated optics : Integrated optics devices

ToC Category:

Original Manuscript: January 30, 2014
Revised Manuscript: March 23, 2014
Manuscript Accepted: March 25, 2014
Published: April 8, 2014

Brian Souhan, Richard R. Grote, Jeffrey B. Driscoll, Ming Lu, Aaron Stein, Hassaram Bakhru, and Richard M. Osgood, "Metal-semiconductor-metal ion-implanted Si waveguide photodetectors for C-band operation," Opt. Express 22, 9150-9158 (2014)

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