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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 22, Iss. 9 — May. 5, 2014
  • pp: 10825–10830

Optical detection and modulation at 2µm-2.5µm in silicon

D. J. Thomson, L. Shen, J. J. Ackert, E. Huante-Ceron, A. P. Knights, M. Nedeljkovic, A. C. Peacock, and G. Z. Mashanovich  »View Author Affiliations


Optics Express, Vol. 22, Issue 9, pp. 10825-10830 (2014)
http://dx.doi.org/10.1364/OE.22.010825


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Abstract

Recently the 2μm wavelength region has emerged as an exciting prospect for the next generation of telecommunications. In this paper we experimentally characterise silicon based plasma dispersion effect optical modulation and defect based photodetection in the 2-2.5μm wavelength range. It is shown that the effectiveness of the plasma dispersion effect is dramatically increased in this wavelength window as compared to the traditional telecommunications wavelengths of 1.3μm and 1.55μm. Experimental results from the defect based photodetectors show that detection is achieved in the 2-2.5μm wavelength range, however the responsivity is reduced as the wavelength is increased away from 1.55μm.

© 2014 Optical Society of America

OCIS Codes
(040.5160) Detectors : Photodetectors
(060.4080) Fiber optics and optical communications : Modulation
(130.4110) Integrated optics : Modulators

ToC Category:
Optical Devices

History
Original Manuscript: March 26, 2014
Revised Manuscript: April 14, 2014
Manuscript Accepted: April 16, 2014
Published: April 28, 2014

Citation
D. J. Thomson, L. Shen, J. J. Ackert, E. Huante-Ceron, A. P. Knights, M. Nedeljkovic, A. C. Peacock, and G. Z. Mashanovich, "Optical detection and modulation at 2µm-2.5µm in silicon," Opt. Express 22, 10825-10830 (2014)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-22-9-10825


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