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Optics Express

Optics Express

  • Editor: Andrew M. Weiner
  • Vol. 22, Iss. 9 — May. 5, 2014
  • pp: 11367–11375

A high-responsivity photodetector absent metal-germanium direct contact

Yi Zhang, Shuyu Yang, Yisu Yang, Michael Gould, Noam Ophir, Andy Eu-Jin Lim, Guo-Qiang Lo, Peter Magill, Keren Bergman, Tom Baehr-Jones, and Michael Hochberg  »View Author Affiliations

Optics Express, Vol. 22, Issue 9, pp. 11367-11375 (2014)

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We report a Ge-on-Si photodetector without doped Ge or Ge-metal contacts. Despite the simplified fabrication process, the device shows a responsivity of 1.14 A/W at −4 V reverse bias and 1.44 A/W at −12V, at 1550 nm wavelength. Dark current is less than 1µA under both bias conditions. We also demonstrate open eye diagrams at 40Gb/s.

© 2014 Optical Society of America

OCIS Codes
(040.5160) Detectors : Photodetectors
(130.0130) Integrated optics : Integrated optics
(250.0250) Optoelectronics : Optoelectronics

ToC Category:

Original Manuscript: March 26, 2014
Revised Manuscript: April 23, 2014
Manuscript Accepted: April 25, 2014
Published: May 2, 2014

Yi Zhang, Shuyu Yang, Yisu Yang, Michael Gould, Noam Ophir, Andy Eu-Jin Lim, Guo-Qiang Lo, Peter Magill, Keren Bergman, Tom Baehr-Jones, and Michael Hochberg, "A high-responsivity photodetector absent metal-germanium direct contact," Opt. Express 22, 11367-11375 (2014)

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