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Energy Express

  • Editor: Christian Seassal
  • Vol. 22, Iss. S1 — Jan. 13, 2014
  • pp: A179–A187

Performance of GaN-based light-emitting diodes fabricated using GaN epilayers grown on silicon substrates

Ray-Hua Horng, Bing-Rui Wu, Ching-Ho Tien, Sin-Liang Ou, Min-Hao Yang, Hao-Chung Kuo, and Dong-Sing Wuu  »View Author Affiliations

Optics Express, Vol. 22, Issue S1, pp. A179-A187 (2014)

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Light extraction of GaN-based light-emitting diodes grown on Si(111) substrate (GaN-on-Si based LEDs) is presented in this study. Three different designs of GaN-on-Si based LEDs with the lateral structure, lateral structure on mirror/Si(100) substrate, and vertical structure on mirror/Si(100) substrate were epitaxially grown by metalorganic chemical vapor deposition and fabricated using chemical lift-off and double-transfer techniques. Current-voltage, light output power, far-field radiation patterns, and electroluminescence characteristics of these three LEDs were discussed. At an injection current of 700 mA, the output powers of LEDs with the lateral structure on mirror/Si(100) substrate and vertical structure on mirror/Si(100) substrate were measured to be 155.07 and 261.07 mW, respectively. The output powers of these two LEDs had 70.63% and 187.26% enhancement compared to that of LED with the lateral structure, respectively. The result indicated this vertical structure LED was useful in improving the light extraction due to an enhancement in light scattering efficiency while the high-reflection mirror and diffuse surfaces were employed.

© 2014 Optical Society of America

OCIS Codes
(160.2100) Materials : Electro-optical materials
(230.3670) Optical devices : Light-emitting diodes

ToC Category:
Light-Emitting Diodes

Original Manuscript: November 28, 2013
Revised Manuscript: January 3, 2014
Manuscript Accepted: January 3, 2014
Published: January 10, 2014

Ray-Hua Horng, Bing-Rui Wu, Ching-Ho Tien, Sin-Liang Ou, Min-Hao Yang, Hao-Chung Kuo, and Dong-Sing Wuu, "Performance of GaN-based light-emitting diodes fabricated using GaN epilayers grown on silicon substrates," Opt. Express 22, A179-A187 (2014)

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