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Energy Express

  • Editor: Christian Seassal
  • Vol. 22, Iss. S3 — May. 5, 2014
  • pp: A1001–A1008

Efficiency improvement by polarization-reversed electron blocking structure in GaN-based Light-emitting diodes

Xiaoli Ji, Tongbo Wei, Fuhua Yang, Hongxi Lu, Xuecheng Wei, Ping Ma, Xiaoyan Yi, Junxi Wang, Yiping Zeng, Guohong Wang, and Jinmin Li  »View Author Affiliations

Optics Express, Vol. 22, Issue S3, pp. A1001-A1008 (2014)

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Polarization-reversed electron-blocking structure, which had negative polarization charges localized at the interface between the last quantum barrier (LQB) and electron-blocking layer (EBL), was demonstrated to remarkably improve the light-emitting efficiency of GaN-based blue light-emitting diodes (LEDs) numerically and experimentally. The improvement was attributed to the enhanced electron-blocking effectiveness by the elevated conduction band nearby the LQB/EBL interface. Nevertheless, the efficiency droop was not mitigated because the decrease of electron-leakage was accompanied by the increase of Auger recombination.

© 2014 Optical Society of America

OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(250.5590) Optoelectronics : Quantum-well, -wire and -dot devices

ToC Category:
Light-Emitting Diodes

Original Manuscript: February 19, 2014
Revised Manuscript: April 17, 2014
Manuscript Accepted: April 17, 2014
Published: April 29, 2014

Xiaoli Ji, Tongbo Wei, Fuhua Yang, Hongxi Lu, Xuecheng Wei, Ping Ma, Xiaoyan Yi, Junxi Wang, Yiping Zeng, Guohong Wang, and Jinmin Li, "Efficiency improvement by polarization-reversed electron blocking structure in GaN-based Light-emitting diodes," Opt. Express 22, A1001-A1008 (2014)

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  1. M.-H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett. 91(18), 183507 (2007). [CrossRef]
  2. K. J. Vampola, M. Iza, S. Keller, S. P. DenBaars, and S. Nakamura, “Measurement of electron overflow in 450 nm InGaN light-emitting diode structures,” Appl. Phys. Lett. 94(6), 061116 (2009). [CrossRef]
  3. D. S. Meyaard, G. Lin, Q. Shan, J. Cho, E. F. Schubert, H. Shim, M.-H. Kim, and C. Sone, “Asymmetry of carrier transport leading to efficiency droop in GaInN based light-emitting diodes,” Appl. Phys. Lett. 99(25), 251115 (2011). [CrossRef]
  4. J.-H. Ryou, P. D. Yoder, J. Liu, Z. Lochner, H. Kim, S. Choi, H. J. Kim, and R. D. Dupuis, “Control of Quantum-Confined Stark Effect in InGaN-Based Quantum Wells,” IEEE J. Sel. Top. Quantum Electron. 15(4), 1080–1091 (2009). [CrossRef]
  5. Y.-K. Kuo, J.-Y. Chang, and M.-C. Tsai, “Enhancement in hole-injection efficiency of blue InGaN light-emitting diodes from reduced polarization by some specific designs for the electron blocking layer,” Opt. Lett. 35(19), 3285–3287 (2010). [CrossRef] [PubMed]
  6. N. Zhang, Z. Liu, T. Wei, L. Zhang, X. Wei, X. Wang, H. Lu, J. Li, and J. Wang, “Effect of the graded electron blocking layer on the emission properties of GaN-based green light-emitting diodes,” Appl. Phys. Lett. 100(5), 053504 (2012). [CrossRef]
  7. C. H. Wang, C. C. Ke, C. Y. Lee, S. P. Chang, W. T. Chang, J. C. Li, Z. Y. Li, H. C. Yang, H. C. Kuo, T. C. Lu, and S. C. Wang, “Hole injection and efficiency droop improvement in InGaN/GaN light emitting diodes by band-engineered electron blocking layer,” Appl. Phys. Lett. 97(26), 261103 (2010). [CrossRef]
  8. S. Choi, H. J. Kim, S.-S. Kim, J. Liu, J. Kim, J.-H. Ryou, R. D. Dupuis, A. M. Fischer, and F. A. Ponce, “Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer,” Appl. Phys. Lett. 96(22), 221105 (2010). [CrossRef]
  9. M. F. Schubert, J. Xu, J. K. Kim, E. F. Schubert, M. H. Kim, S. Yoon, S. M. Lee, C. Sone, T. Sakong, and Y. Park, “Polarization-matched GaInN/AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop,” Appl. Phys. Lett. 93(4), 041102 (2008).
  10. A. J. Ghazai, S. M. Thahab, H. Abu Hassan, and Z. Hassan, “Quaternary ultraviolet AlInGaN MQW laser diode performance using quaternary AlInGaN electron blocking layer,” Opt. Express 19(10), 9245–9254 (2011). [CrossRef] [PubMed]
  11. D. S. Meyaard, G.-B. Lin, M. Ma, J. Cho, E. F. Schubert, S.-H. Han, M. H. Kim, H. W. Shim, and Y. S. Kim, “GaInN light-emitting diodes using separate epitaxial growth for the p-type region to attain polarization-inverted electron-blocking layer, reduced electron leakage, and improved hole injection,” Appl. Phys. Lett. 103(20), 201112 (2013). [CrossRef]
  12. R. M. Lin, S. F. Yu, S. J. Chang, T. H. Chiang, S. P. Chang, and C. H. Chen, “Inserting a p-InGaN layer before the p-AlGaN electron blocking layer suppresses efficiency droop in InGaN-based light-emitting diodes,” Appl. Phys. Lett. 101(8), 081120 (2012). [CrossRef]
  13. C. S. Xia, Z. M. S. Li, W. Lu, Z. H. Zhang, Y. Sheng, and L. W. Cheng, “Droop improvement in blue InGaN/GaN multiple quantum well light-emitting diodes with indium graded last barrier,” Appl. Phys. Lett. 99(23), 233501 (2011). [CrossRef]
  14. J. Y. Zhang, L. E. Cai, B. P. Zhang, X. L. Hu, F. Jiang, J. Z. Yu, and Q. M. Wang, “Efficient hole transport in asymmetric coupled InGaN multiple quantum wells,” Appl. Phys. Lett. 95(16), 161110 (2009). [CrossRef]
  15. X. Ni, X. Li, J. Lee, S. Liu, V. Avrutin, Ü. Özgür, H. Morkoç, A. Matulionis, T. Paskova, G. Mulholland, and K. R. Evans, “InGaN staircase electron injector for reduction of electron overflow in InGaN light emitting diodes,” Appl. Phys. Lett. 97(3), 031110 (2010). [CrossRef]
  16. V. Avrutin, S. A. Hafiz, F. Zhang, Ü. Ozgür, H. Morkoç, and A. Matulionis, “InGaN light-emitting diodes: Efficiency-limiting processes at high injection,” J. Vac. Sci. Technol. A 31(5), 050809 (2013). [CrossRef]
  17. APSYS Device Simulator, Software Package, Crosslight Software, Inc., Canada.
  18. I. Vurgaftman and J. R. Meyer, “Band parameters for nitrogen-containing semiconductors,” J. Appl. Phys. 94(6), 3675 (2003). [CrossRef]
  19. Y. Shen, G. Mueller, S. Watanabe, N. Gardner, A. Munkholm, and M. Krames, “Auger recombination in InGaN measured by photoluminescence,” Appl. Phys. Lett. 91(14), 141101 (2007). [CrossRef]
  20. K. T. Delaney, P. Rinke, and C. G. Van de Walle, “Auger recombination rates in nitrides from first principles,” Appl. Phys. Lett. 94(19), 191109 (2009). [CrossRef]
  21. J. Piprek and Z. M. S. Li, “Sensitivity analysis of electron leakage in III-nitride light-emitting diodes,” Appl. Phys. Lett. 102(13), 131103 (2013). [CrossRef]
  22. J. Iveland, L. Martinelli, J. Peretti, J. S. Speck, and C. Weisbuch, “Direct measurement of auger electrons emitted from a semiconductor light-emitting diode under electrical injection: Identification of the dominant mechanism for efficiency droop,” Phys. Rev. Lett. 110(17), 177406 (2013). [CrossRef] [PubMed]
  23. X. Cao, Y. Yang, and H. Guo, “On the origin of efficiency roll-off in InGaN-based light-emitting diodes,” J. Appl. Phys. 104(9), 093108 (2008). [CrossRef]

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