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Energy Express

  • Editor: Christian Seassal
  • Vol. 22, Iss. S3 — May. 5, 2014
  • pp: A633–A641

Optoelectrical characteristics of green light-emitting diodes containing thick InGaN wells with digitally grown InN/GaN

Chun-Ta Yu, Wei-Chih Lai, Cheng-Hsiung Yen, Hsu-Cheng Hsu, and Shoou-Jinn Chang  »View Author Affiliations

Optics Express, Vol. 22, Issue S3, pp. A633-A641 (2014)

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Compared with conventionally grown thin InGaN wells, thick InGaN wells with digitally grown InN/GaN exhibit superior optical properties. The activation energy (48 meV) of thick InGaN wells (generated by digital InN/GaN growth from temperature-dependent integrated photoluminescence intensity) is larger than the activation energy (25 meV) of conventionally grown thin InGaN wells. Moreover, thick InGaN wells with digitally grown InN/GaN exhibit a smaller σ value (the degree of localization effects) of 19 meV than that of conventionally grown thin InGaN wells (23 meV). Compared with green light-emitting diodes (LEDs) with conventional thin InGaN wells, the improvement in 20-A/cm2 output power for LEDs containing thick InGaN wells with digitally grown InN/GaN is approximately 23%.

© 2014 Optical Society of America

OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(250.0250) Optoelectronics : Optoelectronics

ToC Category:
Light-Emitting Diodes

Original Manuscript: November 11, 2013
Revised Manuscript: December 27, 2013
Manuscript Accepted: February 25, 2014
Published: March 19, 2014

Chun-Ta Yu, Wei-Chih Lai, Cheng-Hsiung Yen, Hsu-Cheng Hsu, and Shoou-Jinn Chang, "Optoelectrical characteristics of green light-emitting diodes containing thick InGaN wells with digitally grown InN/GaN," Opt. Express 22, A633-A641 (2014)

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