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Energy Express

  • Editor: Christian Seassal
  • Vol. 22, Iss. S3 — May. 5, 2014
  • pp: A663–A670

Effects of InGaN layer thickness of AlGaN/InGaN superlattice electron blocking layer on the overall efficiency and efficiency droops of GaN-based light emitting diodes

Chun-Ta Yu, Wei-Chih Lai, Cheng-Hsiung Yen, and Shoou-Jinn Chang  »View Author Affiliations

Optics Express, Vol. 22, Issue S3, pp. A663-A670 (2014)

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The operating voltage, light output power, and efficiency droops of GaN-based light emitting diodes (LEDs) were improved by introducing Mg-doped AlGaN/InGaN superlattice (SL) electron blocking layer (EBL). The thicker InGaN layers of AlGaN/InGaN SL EBL could have a larger effective electron potential height and lower effective hole potential height than that of AlGaN EBL. This thicker InGaN layer could prevent electron leakage into the p-region of LEDs and improve hole injection efficiency to achieve a higher light output power and less efficiency droops with the injection current. The low lateral resistivity of Mg-doped AlGaN/InGaN SL would have superior current spreading at high current injection.

© 2014 Optical Society of America

OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(250.0250) Optoelectronics : Optoelectronics

ToC Category:
Light-Emitting Diodes

Original Manuscript: February 5, 2014
Revised Manuscript: March 7, 2014
Manuscript Accepted: March 8, 2014
Published: March 19, 2014

Chun-Ta Yu, Wei-Chih Lai, Cheng-Hsiung Yen, and Shoou-Jinn Chang, "Effects of InGaN layer thickness of AlGaN/InGaN superlattice electron blocking layer on the overall efficiency and efficiency droops of GaN-based light emitting diodes," Opt. Express 22, A663-A670 (2014)

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  1. S. Nakamura, M. Senoh, N. Iwasa, S. Nagahama, T. Yamada, and T. Mukai, “Superbright green InGaN single-quantum-well-structure light-emitting diodes,” Jpn. J. Appl. Phys.34(10B), L1332–L1335 (1995).
  2. T. Mukai, S. Nagahama, M. Sano, T. Yanamoto, D. Morita, T. Mitani, Y. Narukawa, S. Yamamoto, I. Niki, M. Yamada, S. Sonobe, S. Shioji, K. Deguchi, T. Naitou, H. Tamaki, Y. Murazaki, and M. Kameshima, “Recent progress of nitride-based light emitting devices,” Phys. Status Solidi A200(1), 52–57 (2003). [CrossRef]
  3. W. C. Lai, Y. Y. Yang, L. C. Peng, S. W. Yang, Y. R. Lin, and J. K. Sheu, “GaN-based light emitting diodes with embedded SiO2 pillars and air gap array structures,” Appl. Phys. Lett.97(8), 081103 (2010). [CrossRef]
  4. J. K. Kim, T. Gessmann, E. F. Schubert, J. Q. Xi, H. Luo, J. Cho, C. Sone, and Y. Park, “GaInN light-emitting diode with conductive omnidirectional reflector having a low-refractive-index indium-tin oxide layer,” Appl. Phys. Lett.88(1), 013501 (2006). [CrossRef]
  5. Y.-L. Li, E. F. Schubert, J. W. Graff, A. Osinsky, and W. F. Schaff, “Low-resistance ohmic contacts to p-type GaN,” Appl. Phys. Lett.76(19), 2728–2730 (2000). [CrossRef]
  6. J. Jewell, D. Simeonov, S. C. Huang, Y. L. Hu, S. Nakamura, J. Speck, and C. Weisbuch, “Double embedded photonic crystals for extraction of guided light in light-emitting diodes,” Appl. Phys. Lett.100(17), 171105 (2012). [CrossRef]
  7. P. Zhu, G. Liu, J. Zhang, and N. Tansu, “FDTD analysis on extraction efficiency of GaN light-emitting diodes with microsphere arrays,” J. Displ. Technol.9(5), 317–323 (2013). [CrossRef]
  8. X. Li, P. Zhu, G. Liu, J. Zhang, R. Song, Y. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “Light extraction efficiency enhancement of III-Nitride light-emitting diodes by using 2-D close-packed TiO2 microsphere arrays,” J. Displ. Technol.9(5), 324–332 (2013). [CrossRef]
  9. Y. K. Ee, J. M. Biser, W. Cao, H. M. Chan, R. P. Vinci, and N. Tansu, “Metalorganic vapor phase epitaxy of III-Nitride light-emitting diodes on nanopatterned AGOG sapphire substrate by abbreviated growth mode,” IEEE J. Sel. Top. Quantum Electron.15(4), 1066–1072 (2009). [CrossRef]
  10. Y. K. Ee, X. H. Li, J. Biser, W. Cao, H. M. Chan, R. P. Vinci, and N. Tansu, “Abbreviated MOVPE nucleation of III-nitride light-emitting diodes on nano-patterned sapphire,” J. Cryst. Growth312(8), 1311–1315 (2010). [CrossRef]
  11. Y. Li, S. You, M. Zhu, L. Zhao, W. Hou, T. Detchprohm, Y. Taniguchi, N. Tamura, S. Tanaka, and C. Wetzel, “Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned sapphire,” Appl. Phys. Lett.98(15), 151102 (2011). [CrossRef]
  12. D. S. Meyaard, G.-B. Lin, Q. Shan, J. H. Cho, E. F. Schubert, H. Shim, M. H. Kim, and C. Sone, “Asymmetry of carrier transport leading to efficiency droop in GaInN based light-emitting diodes,” Appl. Phys. Lett.99(25), 251115 (2011). [CrossRef]
  13. G.-B. Lin, D. Meyaard, J. H. Cho, E. F. Schubert, H. Shim, and C. Sone, “Analytic model for the efficiency droop in semiconductors with asymmetric carrier-transport properties based on drift-induced reduction of injection efficiency,” Appl. Phys. Lett.100(16), 161106 (2012). [CrossRef] [PubMed]
  14. S. J. Lee, S. H. Han, C. Y. Cho, S. P. Lee, D. Y. Noh, H. W. Shim, Y. C. Kim, and S. J. Park, “Improvement of GaN-based light-emitting diodes using p-type AlGaN/GaN superlattices with a graded Al composition,” J. Phys. D Appl. Phys.44(10), 105101 (2011). [CrossRef]
  15. Y. Y. Zhang and Y. A. Yin, “Performance enhancement of blue light-emitting diodes with a special designed AlGaN/GaN superlattice electron-blocking layer,” Appl. Phys. Lett.99(22), 221103 (2011). [CrossRef]
  16. B. C. Lin, K. J. Chen, H. V. Han, Y. P. Lan, C. H. Chiu, C. C. Lin, M. H. Shih, P.-T. Lee, and H.-C. Kuo, “Advantages of blue LEDs with graded-composition AlGaN/GaN superlattice EBL,” IEEE Photon. Technol. Lett.25(21), 2062–2065 (2013). [CrossRef]
  17. Y. Y. Zhang, X. L. Zhu, Y. A. Yin, and J. Ma, “Performance enhancement of near-UV light-emitting diodes with an InAlN/GaN superlattice electron-blocking layer,” IEEE Electron Device Lett.33(7), 994–996 (2012). [CrossRef]
  18. J. Chen, G. H. Fan, W. Pang, S. W. Zheng, and Y. Y. Zhang, “Improvement of efficiency droop in blue InGaN light-emitting diodes with p-InGaN/GaN superlattice last quantum barrier,” IEEE Photon. Technol. Lett.24(24), 2218–2220 (2012). [CrossRef]
  19. F.-M. Chen, B.-T. Lioub, Y.-A. Chang, J.-Y. Chang, Y.-T. Kuo, and Y.-K. Kuo, “Numerical analysis of using superlattice-AlGaN/InGaN as electron blocking layer in green InGaN light-emitting diodes,” Proc. SPIE8625, 862526 (2013). [CrossRef]
  20. P. Kozodoy, M. Hansen, S. P. DenBaars, and U. K. Mishra, “Enhanced Mg doping efficiency in Al0.2Ga0.8N/GaN superlattices,” Appl. Phys. Lett.74(24), 3681–3683 (1999). [CrossRef]

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