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Energy Express

Energy Express

  • Editor: Christian Seassal
  • Vol. 22, Iss. S3 — May. 5, 2014
  • pp: A679–A685

InAs/GaAsSb quantum dot solar cells

Sabina Hatch, Jiang Wu, Kimberly Sablon, Phu Lam, Mingchu Tang, Qi Jiang, and Huiyun Liu  »View Author Affiliations

Optics Express, Vol. 22, Issue S3, pp. A679-A685 (2014)

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The hybrid structure of GaAs/GaAsSb quantum well (QW)/InAs quantum dots solar cells (QDSCs) is analyzed using power-dependent and temperature-dependent photoluminescence. We demonstrate that placing the GaAsSb QW beneath the QDs forms type-II characteristics that initiate at 12% Sb composition. Current density-voltage measurements demonstrate a decrease in power efficiency with increasing Sb composition. This could be attributed to increased valence band potential in the GaAsSb QW that subsequently limits hole transportation in the QD region. To reduce the confinement energy barrier, a 2 nm GaAs wall is inserted between GaAsSb QW and InAs QDs, leading to a 23% improvement in power efficiency for QDSCs.

© 2014 Optical Society of America

OCIS Codes
(040.5350) Detectors : Photovoltaic
(230.5590) Optical devices : Quantum-well, -wire and -dot devices
(350.6050) Other areas of optics : Solar energy

ToC Category:

Original Manuscript: December 4, 2013
Revised Manuscript: January 16, 2014
Manuscript Accepted: February 4, 2014
Published: March 26, 2014

Sabina Hatch, Jiang Wu, Kimberly Sablon, Phu Lam, Mingchu Tang, Qi Jiang, and Huiyun Liu, "InAs/GaAsSb quantum dot solar cells," Opt. Express 22, A679-A685 (2014)

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