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Energy Express

  • Editor: Christian Seassal
  • Vol. 22, Iss. S3 — May. 5, 2014
  • pp: A941–A946

High performance GaN-based flip-chip LEDs with different electrode patterns

Ray-Hua Horng, Shih-Hao Chuang, Ching-Ho Tien, Sin-Cyuan Lin, and Dong-Sing Wuu  »View Author Affiliations

Optics Express, Vol. 22, Issue S3, pp. A941-A946 (2014)

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A high-performance flip-chip light-emitting diode (FCLED) with a Ni/Ag metallic film as high reflectivity mirror (92.67%) of p-type electrode was successfully fabricated. The effect of geometric electrode patterns on the blue InGaN/GaN LEDs was investigated and analyzed qualitatively its current spreading in the active region. With different electrode patterns, these devices were experimented and simulated by simple electrical circuits in order to confirm its current-voltage characteristics and light emission pattern. It was found that the forward voltages of these FCLEDs were about 3.6 V (@350 mA). The light output power of FCLEDs with circle-round type electrode was 368 mW at an injection current of 700 mA. From these optoelectronic measurement and thermal infrared images, we proposed some design methodologies for improved current spreading, light output power, droop efficiency and thermal performance.

© 2014 Optical Society of America

OCIS Codes
(160.2100) Materials : Electro-optical materials
(230.3670) Optical devices : Light-emitting diodes

ToC Category:
Light-Emitting Diodes

Original Manuscript: February 20, 2014
Revised Manuscript: April 11, 2014
Manuscript Accepted: April 11, 2014
Published: April 18, 2014

Ray-Hua Horng, Shih-Hao Chuang, Ching-Ho Tien, Sin-Cyuan Lin, and Dong-Sing Wuu, "High performance GaN-based flip-chip LEDs with different electrode patterns," Opt. Express 22, A941-A946 (2014)

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