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Energy Express

Energy Express

  • Editor: Christian Seassal
  • Vol. 22, Iss. S4 — Jun. 30, 2014
  • pp: A1093–A1100

Efficiency enhancement of homoepitaxial InGaN/GaN light-emitting diodes on free-standing GaN substrate with double embedded SiO2 photonic crystals

Tongbo Wei, Ziqiang Huo, Yonghui Zhang, Haiyang Zheng, Yu Chen, Jiankun Yang, Qiang Hu, Ruifei Duan, Junxi Wang, Yiping Zeng, and Jinmin Li  »View Author Affiliations


Optics Express, Vol. 22, Issue S4, pp. A1093-A1100 (2014)
http://dx.doi.org/10.1364/OE.22.0A1093


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Abstract

Homoepitaxially grown InGaN/GaN light emitting diodes (LEDs) with SiO2 nanodisks embedded in n-GaN and p-GaN as photonic crystal (PhC) structures by nanospherical-lens photolithography are presented and investigated. The introduction of SiO2 nanodisks doesn’t produce the new dislocations and doesn’t also result in the electrical deterioration of PhC LEDs. The light output power of homoepitaxial LEDs with embedded PhC and double PhC at 350 mA current is increased by 29.9% and 47.2%, respectively, compared to that without PhC. The corresponding light radiation patterns in PhC LEDs on GaN substrate show a narrow beam shape due to strong guided light extraction, with a view angle reduction of about 30°. The PhC LEDs are also analyzed in detail by finite-difference time-domain simulation (FDTD) to further reveal the emission characteristics.

© 2014 Optical Society of America

OCIS Codes
(230.0230) Optical devices : Optical devices
(230.3670) Optical devices : Light-emitting diodes
(220.4241) Optical design and fabrication : Nanostructure fabrication
(160.5298) Materials : Photonic crystals

ToC Category:
Light-Emitting Diodes

History
Original Manuscript: April 4, 2014
Revised Manuscript: May 23, 2014
Manuscript Accepted: May 26, 2014
Published: June 2, 2014

Citation
Tongbo Wei, Ziqiang Huo, Yonghui Zhang, Haiyang Zheng, Yu Chen, Jiankun Yang, Qiang Hu, Ruifei Duan, Junxi Wang, Yiping Zeng, and Jinmin Li, "Efficiency enhancement of homoepitaxial InGaN/GaN light-emitting diodes on free-standing GaN substrate with double embedded SiO2 photonic crystals," Opt. Express 22, A1093-A1100 (2014)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-22-S4-A1093


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