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Energy Express

Energy Express

  • Editor: Christian Seassal
  • Vol. 22, Iss. S4 — Jun. 30, 2014
  • pp: A1164–A1173

Enhanced performance of InGaN/GaN multiple-quantum-well light-emitting diodes grown on nanoporous GaN layers

Kwang Jae Lee, Sang-Jo Kim, Jae-Joon Kim, Kyungwook Hwang, Sung-Tae Kim, and Seong-Ju Park  »View Author Affiliations


Optics Express, Vol. 22, Issue S4, pp. A1164-A1173 (2014)
http://dx.doi.org/10.1364/OE.22.0A1164


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Abstract

We demonstrate the high efficiency of InGaN/GaN multiple quantum wells (MQWs) light-emitting diode (LED) grown on the electrochemically etched nanoporous (NP) GaN. The photoluminescence (PL) and Raman spectra show that the LEDs with NP GaN have a strong carrier localization effect resulting from the relaxed strain and reduced defect density in MQWs. Also, the finite-difference time-domain (FDTD) simulation shows that the light extraction efficiency (LEE) is increased by light scattering effect by nanopores. The output power of LED with NP GaN is increased up to 123.1% at 20 mA, compared to that of LED without NP GaN. The outstanding performance of LEDs with NP GaN is attributed to the increased internal quantum efficiency (IQE) by the carrier localization in the indium-rich clusters, low defect density in MQWs, and increased LEE owing to the light scattering in NP GaN.

© 2014 Optical Society of America

OCIS Codes
(230.3670) Optical devices : Light-emitting diodes
(220.4241) Optical design and fabrication : Nanostructure fabrication

ToC Category:
Light-Emitting Diodes

History
Original Manuscript: April 14, 2014
Revised Manuscript: May 6, 2014
Manuscript Accepted: May 6, 2014
Published: June 16, 2014

Citation
Kwang Jae Lee, Sang-Jo Kim, Jae-Joon Kim, Kyungwook Hwang, Sung-Tae Kim, and Seong-Ju Park, "Enhanced performance of InGaN/GaN multiple-quantum-well light-emitting diodes grown on nanoporous GaN layers," Opt. Express 22, A1164-A1173 (2014)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-22-S4-A1164


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References

  1. E. F. Schubert, Light-Emitting Diodes (Cambridge University Press, 2003), pp 145–162.
  2. S. Nakamura, “The roles of structural imperfections in InGaN-based blue light-emitting diodes and laser diodes,” Science14(281), 956–961 (1998). [CrossRef] [PubMed]
  3. C. Netzel, H. Bremers, L. Hoffmann, D. Fuhrmann, U. Rossow, and A. Hangleiter, “Emission and recombination characteristics of Ga1−xInxN/GaN quantum well structures with nonradiative recombination suppression by V-shaped pits,” Phys. Rev. B76(15), 155322 (2007). [CrossRef]
  4. K. S. Kim, S. M. Kim, H. Jeong, M. S. Jeong, and G. Y. Jung, “Enhancement of light extraction through the wave-guiding effect of ZnO sub-microrods in InGaN blue light-emitting diodes,” Adv. Funct. Mater.20(7), 1076–1082 (2010). [CrossRef]
  5. B. U. Ye, B. J. Kim, Y. H. Song, J. H. Son, H. K. Yu, M. H. Kim, J. L. Lee, and J. M. Baik, “Enhancing light emission of nanostructured vertical light-emitting diodes by minimizing total internal reflection,” Adv. Funct. Mater.22(3), 632–639 (2012). [CrossRef]
  6. F. Bernardini, V. Fiorentini, and D. Vanderbilt, “Spontaneous polarization and piezoelectric constants of III-V nitrides,” Phys. Rev. B56(16), 10024–10027 (1997). [CrossRef]
  7. S. M. de Sousa Pereira, M. A. Martins, T. Trindade, I. M. Watson, D. Zhu, and C. J. Humphreys, “Controlled integration of nanocrystals in inverted hexagonal nano-pits at the surface of light-emitting heterostructures,” Adv. Mater.20(5), 1038–1043 (2008). [CrossRef]
  8. M. H. Kim, M. F. Schubert, Q. Dai, J. K. Kim, E. F. Schubert, J. Piprek, and Y. J. Park, “Origin of efficiency droop in GaN-based light-emitting diodes,” Appl. Phys. Lett.91(18), 183507 (2007). [CrossRef]
  9. J. S. Speck and S. J. Rosner, “The role of threading dislocations in the physical properties of GaN and its alloys,” Physica B273, 24–32 (1999). [CrossRef]
  10. M. A. Moram, R. A. Oliver, M. J. Kappers, and C. J. Humphreys, “The spatial distribution of threading dislocations in gallium nitride films,” Adv. Mater.21(38–39), 3941–3944 (2009). [CrossRef]
  11. J. Hader, J. V. Moloney, and S. W. Koch, “Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes,” Appl. Phys. Lett.96(22), 221106 (2010). [CrossRef]
  12. S. F. Chichibu, A. C. Abare, M. S. Minsky, S. Keller, S. B. Fleischer, J. E. Bowers, E. Hu, U. K. Mishra, L. A. Coldren, S. P. DenBaars, and T. Sota, “Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures,” Appl. Phys. Lett.73(14), 2006 (1998). [CrossRef]
  13. J. H. Son, J. U. Kim, Y. H. Song, B. J. Kim, C. J. Ryu, and J. L. Lee, “Design rule of nanostructures in light-emitting diodes for complete elimination of total internal reflection,” Adv. Mater.24(17), 2259–2262 (2012). [CrossRef] [PubMed]
  14. C. C. Yang, C. F. Lin, K. T. Chen, R. H. Jiang, and C. M. Lin, “Direct-grown air-void structure in the InGaN light-emitting diodes,” IEEE Elec. Dev. Lett.33(12), 1738–1740 (2012). [CrossRef]
  15. C. Y. Cho, S. E. Kang, K. S. Kim, S. J. Lee, Y. S. Choi, S. H. Han, G. Y. Jung, and S. J. Park, “Enhanced light extraction in light-emitting diodes with photonic crystal structure selectively grown on p-GaN,” Appl. Phys. Lett.96(18), 181110 (2010). [CrossRef]
  16. Y. Zhang, S. W. Ryu, C. Yerino, B. Leung, Q. Sun, Q. Song, H. Cao, and J. Han, “A conductivity-based selective etching for next generation GaN devices,” Phys. Stat. Solidi B247(7), 1713–1716 (2010). [CrossRef]
  17. H. Hartono, C. B. Soh, S. Y. Chow, S. J. Chua, and E. A. Fitzgerald, “Reduction of threading dislocation density in GaN grown on strain relaxed nanoporous GaN template,” Appl. Phys. Lett.90(17), 171917 (2007). [CrossRef]
  18. C. B. Soh, H. Hartono, S. Y. Chow, S. J. Chua, and E. A. Fitzgerald, “Dislocation annihilation in regrown GaN on nanoporous GaN template with optimization of buffer layer growth,” Appl. Phys. Lett.90(5), 053112 (2007). [CrossRef]
  19. T. Sato, I. Mizushima, S. Taniguchi, K. Takenaka, S. Shimonishi, H. Hayashi, M. Hatano, K. Sugihara, and Y. Tsunashima, “Fabrication of silicon-on-nothing structure by substrate engineering using the empty-space-in-silicon formation technique,” Jpn. J. Appl. Phys.43(1), 12–18 (2004). [CrossRef]
  20. K. Sudoh, H. Iwasaki, R. Hiruta, H. Kuribayashi, and R. Shimizu, “Void shape evolution and formation of silicon-on-nothing structures during hydrogen annealing of hole arrays on Si(001),” J. Appl. Phys.105(8), 083536 (2009). [CrossRef]
  21. M. Y. Ghannam, A. S. Alomar, J. Poortmans, and R. P. Mertens, “Interpretation of macropore shape transformation in crystalline silicon upon high temperature processing,” J. Appl. Phys.108(7), 074902 (2010). [CrossRef]
  22. C. Kisielowski, J. Krüger, S. Ruvimov, T. Suski, J. W. Ager, E. Jones, Z. Liliental-Weber, M. Rubin, E. R. Weber, M. D. Bremser, and R. F. Davis, “Strain-related phenomena in GaN thin films,” Phys. Rev. B Condens. Matter54(24), 17745–17753 (1996). [CrossRef] [PubMed]
  23. P. G. Eliseev, P. Perlin, L. Lee, and M. Osinski, “Blue temperature-induced shift and band-tail emission in InGaN-based light sources,” Appl. Phys. Lett.71(5), 569 (1997). [CrossRef]
  24. D. Bimberg, M. Sondergeld, and E. Grobe, “Thermal dissociation of excitons bounds to neutral acceptors in high-purity GaAs,” Phys. Rev. B4(10), 3451–3455 (1971). [CrossRef]
  25. S. Watanabe, N. Yamada, M. Nagashima, Y. Ueki, C. Sasaki, Y. Yamada, T. Taguchi, K. Tadatomo, H. Okagawa, and H. Kudo, “Internal quantum efficiency of highly-efficient InxGa1−xN-based near-ultraviolet light-emitting diodes,” Appl. Phys. Lett.83(24), 4906 (2003). [CrossRef]
  26. J. Shakya, K. Knabe, K. H. Kim, J. Li, J. Y. Lin, and H. X. Jiang, “Polarization of III-nitride blue and ultraviolet light-emitting diodes,” Appl. Phys. Lett.86(9), 091107 (2005). [CrossRef]
  27. B. Li, Y. Feng, and Y. Liu, “An electrical model of InGaN based high power light emitting diodes with self-heating effect,” proc. SPIE6669, 66691 (2007). [CrossRef]
  28. Y. R. Wu, R. Shivaraman, K. C. Wang, and J. S. Speck, “Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure,” Appl. Phys. Lett.101(8), 083505 (2012). [CrossRef]
  29. S. De, A. Layek, A. Raja, A. Kadir, M. R. Gokhale, A. Bhattacharya, S. Dhar, and A. Chowdhury, “Two distinct origins of highly localized luminescent centers within InGaN/GaN quantum-well light-emitting diodes,” Adv. Funct. Mater.21(20), 3828–3835 (2011). [CrossRef]

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