OSA's Digital Library

Optics Express

Optics Express

  • Editor: J. H. Eberly
  • Vol. 6, Iss. 1 — Jan. 3, 2000
  • pp: 7–11

Possibility of fabricating light-emitting porous silicon from gas phase etchants

S. Kalem and O. Yavuzcetin  »View Author Affiliations

Optics Express, Vol. 6, Issue 1, pp. 7-11 (2000)

View Full Text Article

Enhanced HTML    Acrobat PDF (98 KB)

Browse Journals / Lookup Meetings

Browse by Journal and Year


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools



We present a new technique for porous semiconductor formation which is based on the exposure of semiconductor surfaces to gas phase etchants. The technique offers the possibility of fabricating light-emitting devices by selectively exposing a silicon surface to HF vapor. Photoluminescence measurements reveal an efficient emission at around 750 nm. FTIR analysis confirm the existence of strong hydrogen incorporation and oxidation as evidenced from the local bonding environment of hydrogen and oxygen atoms.

© Optical Society of America

OCIS Codes
(040.6040) Detectors : Silicon
(160.2100) Materials : Electro-optical materials
(160.2540) Materials : Fluorescent and luminescent materials
(240.0310) Optics at surfaces : Thin films
(250.0250) Optoelectronics : Optoelectronics

ToC Category:
Research Papers

Original Manuscript: November 9, 1999
Published: January 3, 2000

Seref Kalem and O. Yavuzcetin, "Possibility of fabricating light-emitting porous silicon from gas phase etchants," Opt. Express 6, 7-11 (2000)

Sort:  Journal  |  Reset  


  1. L. T. Canham, "Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers," Appl. Phys. Lett. 57, 1046 (1990). [CrossRef]
  2. V. Lehmann and U. Gosele, "Porous silicon formation: A quantum wire effect," Appl. Phys. Lett. 58, 856 (1991). [CrossRef]
  3. L. T.canham, W. Y.Leong, T. I.Cox, and L. Taylor, "Efficient visible electroluminescence from highly porous silicon under cathodic bias," Appl. Phys. Letts. 21, 2563(1992) [CrossRef]
  4. H. D. Fuchs, M. Stutzmann, M. S. Brandt, M. Rosenbauer, J. Weber, A. Breitschwerdt, P. Deak and M. Cardona, "Porous silicon and siloxene: vibrational and structural properties," Phys. Rev. B48, 8172(1993)
  5. A. G. Cullis, L. T. Canham and P. D. J. Calcott, J. Appl. Phys. 82, 909(1997). [CrossRef]
  6. Z. Gaburro, H. You and D. Babie,"Effect of Resistivity and current density on photoluminescence in porous silicon produced at low HF concentration," J. Appl. Phys. 84, 6345 (1998). [CrossRef]
  7. J. Sarathy, S. Shih, K. H. Jung, C. Tsai, K. -H. Li, D. L. Kwong, J. C. Campbell, "Demonstration of photoluminescence in nonanodized silicon," Appl. Phys. Lett. 60, 1533 (1992). [CrossRef]
  8. A. Ksendzov, R. W. Fathauer, T. George , W. T. Pike, and R. P. Vasquez,"Visible photoluminescence of porous Si1-xGex obtained by stain etching," Appl. Phys. Lett. 63, 200 (1993). [CrossRef]
  9. S. Kalem and Rosenbauer, "Optical and structural investigation of stain-etched silicon," Appl. Phys. Lett. 67, 2551 (1995). [CrossRef]
  10. Y. Kanemitsu, T. Futagi, T. Matsumoto, and H. Mimura, "Origin of the blue and red photoluminescence from oxidized porous silicon," Phys. Rev. B49, 14732 (1994).
  11. J. L. Gole and D. A. Dixon, "Evidence for oxide formation from the single and multiphoton excitation of a porous silicon surface or silicon nanoparticles," J. Appl. Phys. 83, 5985 (1998). [CrossRef]

Cited By

Alert me when this paper is cited

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.


Fig.1 . Fig.2 . Fig. 3.

« Previous Article  |  Next Article »

OSA is a member of CrossRef.

CrossCheck Deposited