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Optics Express

  • Editor: C. Martijn de Sterke
  • Vol. 18, Iss. 14 — Jul. 5, 2010
  • pp: 14637–14643

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Harmonic mode-locking using the double interval technique in quantum dot lasers

Yan Li, Furqan L. Chiragh, Yong-Chun Xin, Chang-Yi Lin, Junghoon Kim, Christos G. Christodoulou, and Luke. F. Lester  »View Author Affiliations


Optics Express, Vol. 18, Issue 14, pp. 14637-14643 (2010)
http://dx.doi.org/10.1364/OE.18.014637


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Abstract

Passive harmonic mode-locking in a quantum dot laser is realized using the double interval technique, which uses two separate absorbers to stimulate a specific higher-order repetition rate compared to the fundamental. Operating alone these absorbers would otherwise reinforce lower harmonic frequencies, but by operating together they produce the harmonic corresponding to their least common multiple. Mode-locking at a nominal 60 GHz repetition rate, which is the 10th harmonic of the fundamental frequency of the device, is achieved unambiguously despite the constraint of a uniformly-segmented, multi-section device layout. The diversity of repetition rates available with this method is also discussed.

© 2010 OSA

1. Introduction

Due to their delta-like density of states, self-assembled quantum dot (QD) materials provide many superior characteristics such as ultra fast gain dynamics and easily saturated gain and absorption [1

D. Bimberg, N. Kirstaedter, N. N. Ledentsov, Zh. I. Alferov, P. S. Kop’ev, and V. M. Ustinov, “InGaAs-GaAs Quantum-Dot Lasers,” IEEE J. Sel. Top. Quantum Electron. 3(2), 196–205 (1997). [CrossRef]

–3

M. Kuntz, G. Fiol, M. Lammlin, D. Bimberg, M. G. Thompson, K. T. Tan, C. Marinelli, R. V. Penty, I. H. White, V. M. Ustinov, A. E. Zhukov, Y. M. Shernyakov, and A. R. Kovsh, “35 GHz mode-locking of 1. 3-μm quantum dot lasers,” Appl. Phys. Lett. 85(5), 843–845 (2004). [CrossRef]

], which make monolithic InAs quantum dot passively mode-locked lasers (QD MLLs) promising candidates for applications such as inter-chip/intra-chip clock distribution [4

G. A. Keeler, B. E. Nelson, D. Agarwal, C. Debaes, N. C. Helman, A. Bhatnagar, and D. A. B. Miller, “The benefits of ultrashort optical pulses in optically interconnected systems,” IEEE J. Sel. Top. Quantum Electron. 9(2), 477–485 (2003). [CrossRef]

], high bit-rate optical time division multiplexing [5

M. Mielke, G. A. Alphonse, and P. J. Delfyett, “168 Channels x 6 GHz from a Multiwavelength Mode-Locked Semiconductor Laser,” IEEE Photon. Technol. Lett. 15(4), 501–503 (2003). [CrossRef]

], and diverse waveform generation [6

C.-Y. Lin, Y.-C. Xin, J. H. Kim, C. G. Christodoulou, and L. F. Lester, “Compact Optical Generation of Microwave Signals Using a Monolithic Quantum Dot Passively Mode-Locked Laser,” IEEE Photon. J. 1(4), 236–244 (2009). [CrossRef]

–8

Y.-C. Xin, Y. Li, V. Kovanis, A. L. Gray, L. Zhang, and L. F. Lester, “Reconfigurable quantum dot monolithic multisection passive mode-locked lasers,” Opt. Express 15(12), 7623–7633 (2007). [CrossRef] [PubMed]

]. A traditional two-section QD MLL consists of single gain and absorber regions with a fixed repetition rate [9

C.-Y. Lin, Y.-C. Xin, Y. Li, F. L. Chiragh, and L. F. Lester, “Cavity design and characteristics of monolithic long-wavelength InAs/InP quantum dash passively mode-locked lasers,” Opt. Express 17(22), 19739–19748 (2009). [CrossRef] [PubMed]

,10

X. D. Huang, A. Stintz, H. Li, L. F. Lester, J. Cheng, and K. J. Malloy, “Passive mode-locking in 1.3-µm two-section InAs quantum dot lasers,” Appl. Phys. Lett. 78(19), 2825–2827 (2001). [CrossRef]

]. Typically, higher repetition rates can be realized by cleaving laser diodes with a shorter cavity length [11

T. Shimizu, X.-L. Wang, and H. Yokoyama, “Asymmetric colliding-pulse mode-locking in InGaAsP semiconductor lasers,” Opt. Rev. 2(6), 401–403 (1995). [CrossRef]

]. Since the maximum optical gain of the ground state transition in quantum dot active regions is relatively small, the cavity length of a QD MLL with cleaved mirrors is usually not much shorter than about 1-mm. This feature limits the fundamental repetition rate (c/2nL) to no more than about 40 GHz for the ground state lasing condition. On the other hand, by placing the saturable absorber at different locations within the laser cavity, multi-section QD MLLs can harmonically mode-lock at a one of many multiples of the laser’s fundamental repetition rate [12

A. R. Rae, M. G. Thompson, R. V. Penty, I. H. White, A. R. Kovsh, S. S. Mikhrin, D. A. Livshits, and I. L. Krestnikov, “Harmonic mode-locking of a Quantum-Dot Laser Diode”, IEEE LEOS Annual Conference, paper ThR5 (2009)

]. These versatile, reconfigurable QD MLLs are very promising candidates for diverse waveform generation since they can create various optical pulse trains simply by using different bias configuration on the same device.

As the preferred repetition rate increases, however, it becomes increasingly difficult to manage the tradeoff between the requirement that the absorber be short enough to clearly stimulate the desired harmonic and long enough to provide sufficient absorption. An incomplete mode-locking at 115 GHz, which was the 16th harmonic of the fundamental frequency, was reported by our group [8

Y.-C. Xin, Y. Li, V. Kovanis, A. L. Gray, L. Zhang, and L. F. Lester, “Reconfigurable quantum dot monolithic multisection passive mode-locked lasers,” Opt. Express 15(12), 7623–7633 (2007). [CrossRef] [PubMed]

], but this result was unpredictable since the absorber section could also stimulate the 5th through 8th harmonics. The double-interval technique, which originated in the field of musical acoustics to solve a similar problem [13

J. L. Duport, Essay on the fingering of the violoncello and on the conduct of the bow, (1806).

], is potentially advantageous for monolithic semiconductor mode-locked lasers because the method achieves harmonics that would otherwise be difficult to isolate using the traditional single absorber method. For the QD MLL, the double interval technique involves two separate saturable absorbing regions that stimulate different higher-order harmonics in order to achieve a multiple of the two.

In this work, a 6.75-mm-long reconfigurable QD MLL that consists of 27 uniform 250-micron long sections was fabricated. Although this cavity design is very flexible and can produce many different waveforms, stimulating specific higher order repetition rates can be challenging. Through the double interval technique, mode-locking at a 60 GHz repetition rate that is the 10th harmonic of the MLL’s fundamental frequency is achieved unambiguously. Furthermore, the diversity of repetition rates that is possible in a single device using the double interval method is presented and the extension of the technique to greater than two absorbers is discussed.

2. Harmonic mode-locking

The multi-section InAs/InGaAs QD MLLs that were studied in this work were grown on a GaAs substrate using Molecular Beam Epitaxy (MBE). The layer structure is shown in Fig. 1 . The “Dots-in-a-well (DWELL)” active region consists of 10 stacks of self-assembled InAs quantum dots embedded in InGaAs quantum wells separated by 16-nm undoped GaAs spacers. The cladding layers on the p-side and n-side are 1800-nm thick Al0.66Ga0.34As material. The laser structure has been capped with a 60-nm thick heavily p-doped GaAs layer. A 3.5-μm wide ridge waveguide multi-section laser was fabricated following standard edge-emitting laser processing steps. The electrical isolation between sections was realized by ion implantation. A schematic diagram of the tested reconfigurable QD MLL is shown in Fig. 2 . The device consists of 27 250-μm sections giving a total cavity length of 6.75-mm (only half of the cavity is shown in Fig. 2 since the harmonics are produced symmetrically). This layout produces a fundamental repetition rate of 6.0 GHz. The device’s back facet, which is near the absorber, has an HR-coating with a reflectivity of approximately 95% and the other facet is low reflection (LR)-coated with a reflectivity of approximately 5%. The 27 equal-length sections are numbered sequentially from m = 1 to 27, where m = 1 represents the position next to the LR facet.

Fig. 1 The quantum dot mode-locked laser structure grown by MBE with 10 stacks of quantum dots in the active region.
Fig. 2 The top-view schematic diagram of the multi-section quantum dot laser that has 27 electrically-isolated anodes of equal length, a common cathode, and a common optical waveguide (seen as the thin horizontal black line across the device). The absorber positions that potentially excite higher-order harmonics are marked. The circled regions show locations that are particularly problematic for isolating a specific harmonic.

Neglecting group index dispersion, the center of an absorber should be placed at L/n, where L is the length of the cavity and n is the order of the desired harmonic. For the multi-section QD MLL studied here, the corresponding section number m that can stimulate the n th-order harmonic generation is calculated according to the following equation [8

Y.-C. Xin, Y. Li, V. Kovanis, A. L. Gray, L. Zhang, and L. F. Lester, “Reconfigurable quantum dot monolithic multisection passive mode-locked lasers,” Opt. Express 15(12), 7623–7633 (2007). [CrossRef] [PubMed]

]:
m= ( N+1)2±N ( 12− 1n)
(1)
in which N is the total number of equal-length segments in the laser cavity. For example, to generate the laser’s second harmonic, the saturable absorber is centered at section 14 as shown in Fig. 2. Figure 3(a) shows the RF spectrum across a 50 GHz span when the device is configured in this manner and operating with a repetition rate of the second harmonic. The pulse train measured by an autocorrelator is shown in Fig. 3(b). The pulse train is gated by the scan range limits of the autocorrelator. The non-uniform spacing of the pulse train is due to the variation in delay time caused by the rotating mirror inside the autocorrelator. In this case, section 14 is biased with a reverse voltage of 4.5 V, and the remainder of the laser diode is uniformly pumped at 1100 A/cm2. As shown in Fig. 3(a), the second harmonic frequency for this laser is 12.03 GHz. By placing a saturable absorber at either section 6 or section 22, mode-locking at the fifth harmonic of the fundamental repetition rate can be excited as well. Figures 3(c) and (d) are the RF spectrum and pulse train of the QD MLL with a 30.12 GHz repetition rate when section 22 was reversed biased at 6.75 V and the gain sections of the laser were uniformly pumped at 1100 A/ cm2.

Fig. 3 The RF spectrum (a) and pulse train (b) of mode-locking at a repetition frequency of 12.03 GHz that is the 2nd harmonic of the QD MLL’s fundamental repetition rate; (c) and (b) are the RF spectrum and pulse train for mode-locking at a repetition frequency of 30.12 GHz, the 5th harmonic.

3. Double interval mode-locking

As the preferred repetition rate increases in harmonic mode-locking, the position of a single absorber has to be placed closer to the ends of the laser cavity. To generate the laser’s 10th harmonic in a uniformly segmented layout, the single saturable absorber should be placed at either section 3 or 25. But these locations could also be used for stimulating the 9th – 12th harmonics according to Eq. (1). Since a repetition frequency of 60 GHz or higher is beyond the span of our RF spectrum analyzer, it is no longer possible to use it for measuring the repetition rate of the QD MLL. However, it is possible to calculate the laser’s repetition rate using multiple pulses measured from an intensity autocorrelation. In Fig. 4(a) , the pulse train measured by an autocorrelator is shown when section 3 is reverse biased with a voltage of 8 V. The remainder of the laser diode was uniformly pumped at 1100 A/cm2. From the time interval of 167.1 ps and a pulse number of 11, it is calculated that the repetition rate at this bias condition is 65.8 GHz, which is very close to the 11th harmonic of the fundamental repetition frequency of this QD MLL. The repetition rate map of the QD MLL as a function of the gain current and the reverse bias voltage on section 3 is plotted in Fig. 5 . The mode-locking behavior is observed in the range when the reverse bias voltage is between 7 and 8V and the gain current is larger than 220 mA. The repetition rate averages 64.6 GHz with a ± 2.7% variation. The range of frequencies corresponds to the 10.5th to 11th harmonic of the fundamental repetition rate of the QD MLL. To solve the problem of generating the 10th harmonic, an entirely different laser layout could be used with a smaller absorber centered on the L/10 position, but at the cost of extra processing and reconfigurability. Since the 2nd and 5th harmonics have already been demonstrated in our reconfigurable device, it should be possible to bias absorbers at the L/2 and L/5 positions to stimulate the 10th harmonic according to the double interval technique. This condition was achieved by applying a reverse bias of 1V at section 14 and a separate reverse bias of 6.8 V at section 22. The remainder of the laser was uniformly pumped with a current density of 1290 A/cm2. The pulse train from the mode-locked laser was measured by an autocorrelator and is shown in Fig. 4(b). The time interval is 185.4 ps and the number of pulses is 11; thus, a repetition frequency of 59.3 GHz is calculated, which is close to the 10th harmonic. A slight repetition rate detuning is probably due to group index dispersion. The contrast ratio of the pulses in Fig. 4(b) is 3:1, while in Fig. 4(a) this ratio is only 1.5:1. Figure 4 also shows a reduced uniformity of the pulse intensity when there is a single absorber present. These two results indicate a significant improvement of mode-locking performance using the double interval technique. The reason for incomplete mode-locking shown in Fig. 4(b) is because section 22 is still not ideally located to stimulate the 5th harmonic. A 25 μm offset toward the HR-coated facet is needed according to Eq. (1). This problem might also be solved by adding absorbers next to section 22, but under this condition the device will not reach threshold since the unsaturated loss is too high.

Fig. 4 (a) The pulse trace showing mode-locking at a repetition rate of 65.8 GHz, which is the 11th harmonic of fundamental frequency of the MLL. Here, section 3 was used as the absorber. Section 3 could potentially stimulate harmonics 9th through 12th; (b) The pulse trace of mode-locking at a repetition rate of 59.3 GHz. The 10th harmonic of the fundamental frequency of the MLL is realized through the double interval technique.
Fig. 5 The repetition rate of the QD MLL as a function of gain current and reverse bias voltage where section 3 is the location of the single absorber. The value of repetition rate is indicated by the color bar. Under different bias conditions, the repetition rate averages 64.6 GHz with a ± 2.7% variation.

4. Repetition rate diversity

It is desirable to evaluate the double interval technique experimentally with respect to repetition rate (waveform) diversity and to examine theoretically the extension of the method to more than two absorbers. First we define Q as the total number of available saturable absorbers and R as the number of active absorbers, which could vary from 1 to Q. The number of possible repetition rates Ω can be expressed using following equation:

Ω= ∑ R=1Q Q! R!(Q!−R!)
(2)

For the double interval technique (Q = 2), there are three different repetition rates that can be theoretically generated. For Q = 3, seven rates are possible, For Q = 4, fifteen rates are achievable, and so on. It is noted that locating the individual absorbers at prime number locations within the cavity is necessary to avoid duplication of repetition rates for the various permutations. Figure 6 experimentally examines the Q = 2 case for the device described above. This plot shows the operational map for harmonic generation as a function of the gain current and the reverse bias voltage on section 22. The reverse bias of section 14 is fixed at 1V. (Alternatively, a similar map can be produced by applying a fixed reverse biased voltage on section 22 and varying the reverse bias on section 14.) The 10th harmonic mode-locking can be observed in the range where 4V< V22<8V and the gain current is larger than 210 mA. The 10th harmonic operation region is at intermediate voltages and higher gain currents to strike the necessary balance between stimulating the 2nd and 5th harmonics in order to produce the 10th. For the double interval method, the laser needs to be pumped higher above threshold in order to saturate the losses in both sections 22 and 14. The actual repetition rate averages 59.75 GHz with a ± 1.1% variation across the whole 10th harmonic operation region. The smaller variation in the repetition rate in the double interval technique versus the single absorber method shows that the double interval technique produces more stable mode locking. From the performance map, it can be seen that the 2nd and 5th harmonics can also be obtained using the same probing configuration under different bias conditions. These results experimentally verify Eq. (2). The 5th harmonic operation is favored over a larger range of currents and reverse bias voltages due to the asymmetric photon density distribution in the laser cavity from the HR/LR mirror design. The ability to switch repetition rates with a single control voltage should be very useful for the diverse waveform generation applications.

Fig. 6 Operational map for exciting repetition rates at the 2nd, 5th and 10th harmonics of the multi-section QD MLL as function of gain current and reverse bias voltage on section 22. The reverse bias voltage on section 14 is fixed at 1V.

5. Conclusions

In summary, by placing absorbers at two physically separate locations in the laser cavity, mode-locking at a higher order harmonic that is normally very difficult to achieve using a conventional single absorber approach has been realized by the double interval technique. A nominal repetition rate of 60 GHz at the 10th harmonic was demonstrated using a 6.75-mm long QD MLL with a fundamental repetition rate of 6 GHz. The operational map for 2nd, 5th and 10th harmonic mode-locking was generated, which demonstrated that three different repetition rates can be obtained using a single device layout and one control electrode. The double interval technique and its extension to more complex arrangements will be particularly useful for increasing the waveform diversity of a monolithic mode-locked semiconductor laser that is otherwise constrained by a fixed cavity length and pumping geometry.

Acknowledgments

This research was supported by the Air Force Research Laboratory under grants FA8650-08-C-1417 and FA8750-06-1-0085.

References and Links

1.

D. Bimberg, N. Kirstaedter, N. N. Ledentsov, Zh. I. Alferov, P. S. Kop’ev, and V. M. Ustinov, “InGaAs-GaAs Quantum-Dot Lasers,” IEEE J. Sel. Top. Quantum Electron. 3(2), 196–205 (1997). [CrossRef]

2.

X. D. Huang, A. Stintz, H. Li, A. Rice, G. T. Liu, L. F. Lester, J. Cheng, and K. J. Malloy, “Bistable operation of a two section 1.3-μm InAs quantum dot laser-Absorption saturation and the quantum confined Stark effect,” IEEE J. Quantum Electron. 37(3), 414–417 (2001). [CrossRef]

3.

M. Kuntz, G. Fiol, M. Lammlin, D. Bimberg, M. G. Thompson, K. T. Tan, C. Marinelli, R. V. Penty, I. H. White, V. M. Ustinov, A. E. Zhukov, Y. M. Shernyakov, and A. R. Kovsh, “35 GHz mode-locking of 1. 3-μm quantum dot lasers,” Appl. Phys. Lett. 85(5), 843–845 (2004). [CrossRef]

4.

G. A. Keeler, B. E. Nelson, D. Agarwal, C. Debaes, N. C. Helman, A. Bhatnagar, and D. A. B. Miller, “The benefits of ultrashort optical pulses in optically interconnected systems,” IEEE J. Sel. Top. Quantum Electron. 9(2), 477–485 (2003). [CrossRef]

5.

M. Mielke, G. A. Alphonse, and P. J. Delfyett, “168 Channels x 6 GHz from a Multiwavelength Mode-Locked Semiconductor Laser,” IEEE Photon. Technol. Lett. 15(4), 501–503 (2003). [CrossRef]

6.

C.-Y. Lin, Y.-C. Xin, J. H. Kim, C. G. Christodoulou, and L. F. Lester, “Compact Optical Generation of Microwave Signals Using a Monolithic Quantum Dot Passively Mode-Locked Laser,” IEEE Photon. J. 1(4), 236–244 (2009). [CrossRef]

7.

J. H. Kim, C. G. Christodoulou, Z. Ku, C.-Y. Lin, Y.-C. Xin, N. A. Naderi, and L. F. Lester, “Hybrid integration of a bowtie slot antenna and a quantum dot mode-locked laser,” IEEE Antennas Wirel. Propag. Lett. 8, 1337–1340 (2009). [CrossRef]

8.

Y.-C. Xin, Y. Li, V. Kovanis, A. L. Gray, L. Zhang, and L. F. Lester, “Reconfigurable quantum dot monolithic multisection passive mode-locked lasers,” Opt. Express 15(12), 7623–7633 (2007). [CrossRef] [PubMed]

9.

C.-Y. Lin, Y.-C. Xin, Y. Li, F. L. Chiragh, and L. F. Lester, “Cavity design and characteristics of monolithic long-wavelength InAs/InP quantum dash passively mode-locked lasers,” Opt. Express 17(22), 19739–19748 (2009). [CrossRef] [PubMed]

10.

X. D. Huang, A. Stintz, H. Li, L. F. Lester, J. Cheng, and K. J. Malloy, “Passive mode-locking in 1.3-µm two-section InAs quantum dot lasers,” Appl. Phys. Lett. 78(19), 2825–2827 (2001). [CrossRef]

11.

T. Shimizu, X.-L. Wang, and H. Yokoyama, “Asymmetric colliding-pulse mode-locking in InGaAsP semiconductor lasers,” Opt. Rev. 2(6), 401–403 (1995). [CrossRef]

12.

A. R. Rae, M. G. Thompson, R. V. Penty, I. H. White, A. R. Kovsh, S. S. Mikhrin, D. A. Livshits, and I. L. Krestnikov, “Harmonic mode-locking of a Quantum-Dot Laser Diode”, IEEE LEOS Annual Conference, paper ThR5 (2009)

13.

J. L. Duport, Essay on the fingering of the violoncello and on the conduct of the bow, (1806).

OCIS Codes
(130.3120) Integrated optics : Integrated optics devices
(140.4050) Lasers and laser optics : Mode-locked lasers
(140.5960) Lasers and laser optics : Semiconductor lasers

ToC Category:
Lasers and Laser Optics

History
Original Manuscript: May 3, 2010
Revised Manuscript: June 11, 2010
Manuscript Accepted: June 16, 2010
Published: June 23, 2010

Citation
Yan Li, Furqan L. Chiragh, Yong-Chun Xin, Chang-Yi Lin, Junghoon Kim, Christos G. Christodoulou, and Luke. F. Lester, "Harmonic mode-locking using the double interval technique in quantum dot lasers," Opt. Express 18, 14637-14643 (2010)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-18-14-14637


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References

  1. D. Bimberg, N. Kirstaedter, N. N. Ledentsov, Zh. I. Alferov, P. S. Kop’ev, and V. M. Ustinov, “InGaAs-GaAs Quantum-Dot Lasers,” IEEE J. Sel. Top. Quantum Electron. 3(2), 196–205 (1997). [CrossRef]
  2. X. D. Huang, A. Stintz, H. Li, A. Rice, G. T. Liu, L. F. Lester, J. Cheng, and K. J. Malloy, “Bistable operation of a two section 1.3-μm InAs quantum dot laser-Absorption saturation and the quantum confined Stark effect,” IEEE J. Quantum Electron. 37(3), 414–417 (2001). [CrossRef]
  3. M. Kuntz, G. Fiol, M. Lammlin, D. Bimberg, M. G. Thompson, K. T. Tan, C. Marinelli, R. V. Penty, I. H. White, V. M. Ustinov, A. E. Zhukov, Y. M. Shernyakov, and A. R. Kovsh, “35 GHz mode-locking of 1. 3-μm quantum dot lasers,” Appl. Phys. Lett. 85(5), 843–845 (2004). [CrossRef]
  4. G. A. Keeler, B. E. Nelson, D. Agarwal, C. Debaes, N. C. Helman, A. Bhatnagar, and D. A. B. Miller, “The benefits of ultrashort optical pulses in optically interconnected systems,” IEEE J. Sel. Top. Quantum Electron. 9(2), 477–485 (2003). [CrossRef]
  5. M. Mielke, G. A. Alphonse, and P. J. Delfyett, “168 Channels x 6 GHz from a Multiwavelength Mode-Locked Semiconductor Laser,” IEEE Photon. Technol. Lett. 15(4), 501–503 (2003). [CrossRef]
  6. C.-Y. Lin, Y.-C. Xin, J. H. Kim, C. G. Christodoulou, and L. F. Lester, “Compact Optical Generation of Microwave Signals Using a Monolithic Quantum Dot Passively Mode-Locked Laser,” IEEE Photon. J. 1(4), 236–244 (2009). [CrossRef]
  7. J. H. Kim, C. G. Christodoulou, Z. Ku, C.-Y. Lin, Y.-C. Xin, N. A. Naderi, and L. F. Lester, “Hybrid integration of a bowtie slot antenna and a quantum dot mode-locked laser,” IEEE Antennas Wirel. Propag. Lett. 8, 1337–1340 (2009). [CrossRef]
  8. Y.-C. Xin, Y. Li, V. Kovanis, A. L. Gray, L. Zhang, and L. F. Lester, “Reconfigurable quantum dot monolithic multisection passive mode-locked lasers,” Opt. Express 15(12), 7623–7633 (2007). [CrossRef] [PubMed]
  9. C.-Y. Lin, Y.-C. Xin, Y. Li, F. L. Chiragh, and L. F. Lester, “Cavity design and characteristics of monolithic long-wavelength InAs/InP quantum dash passively mode-locked lasers,” Opt. Express 17(22), 19739–19748 (2009). [CrossRef] [PubMed]
  10. X. D. Huang, A. Stintz, H. Li, L. F. Lester, J. Cheng, and K. J. Malloy, “Passive mode-locking in 1.3-µm two-section InAs quantum dot lasers,” Appl. Phys. Lett. 78(19), 2825–2827 (2001). [CrossRef]
  11. T. Shimizu, X.-L. Wang, and H. Yokoyama, “Asymmetric colliding-pulse mode-locking in InGaAsP semiconductor lasers,” Opt. Rev. 2(6), 401–403 (1995). [CrossRef]
  12. A. R. Rae, M. G. Thompson, R. V. Penty, I. H. White, A. R. Kovsh, S. S. Mikhrin, D. A. Livshits, and I. L. Krestnikov, “Harmonic mode-locking of a Quantum-Dot Laser Diode”, IEEE LEOS Annual Conference, paper ThR5 (2009)
  13. J. L. Duport, Essay on the fingering of the violoncello and on the conduct of the bow, (1806).

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