A 2 × 2 nonblocking Mach–Zehnder-based silicon switch matrix

doi:10.1364/OE.20.012593

A 2 × 2 nonblocking Mach–Zehnder-based silicon switch matrix

Weiwei Chen, Wanjun Wang, Weifeng Guo, Zhao Gong, Haiquan Zhou, Qiang Zhou, Xiaoqing Jiang, and Jianyi Yang »View Author Affiliations

Optics Express, Vol. 20, Issue 11, pp. 12593-12598 (2012)
http://dx.doi.org/10.1364/OE.20.012593

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▸ Article Outline
– Abstract
1. Introduction
2. Device design and fabrication
3. Measurement
4. Conclusion
– References and links

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Abstract

A 2 × 2 non-blocking switch matrix based on the Mach–Zehnder (MZ) interferometer was designed and fabricated on silicon-on-insulator (SOI) wafer through 0.8-μm standard commercial CMOS foundry. The two paired multimode-imaging (MMI) couplers in each MZ switching element were used as power splitters and combiners. Experimental results show that the switching elements are electrically driven with a switching speed of 17.4 ns and its cross-talk is lower than −16.1 dB under a common spectral bandwidth of 35 nm. The total switching power consumption varies from 4.55 mW to 22.4 mW for different switching paths.

1. Introduction

Due to the advantage of feasibility to integrate with electronic devices on one chip and compatibility with the CMOS fabrication technology, silicon photonics provides an attractive option for future optical network [1

T. Barwicz, H. Byun, F. Gan, C. W. Holzwarth, M. A. Popovic, P. T. Rakich, M. R. Watts, E. P. Ippen, F. X. Kartner, H. I. Smith, J. S. Orcutt, R. J. Ram, V. Stojanovic, O. O. Olubuyide, J. L. Hoyt, S. Spector, M. Geis, M. Grein, T. Lyszczarz, and J. U. Yoon, “Silicon photonics for compact, energy-efficient interconnects [Invited],” J. Opt. Netw. 6(1), 63–73 (2007). [CrossRef]

In order to realize some important optical network nodes, such as optical path cross connect (OXC) nodes and optical add-drop multiplexing (OADM) nodes [2

K. Sato, “Photonic transport network OAM technologies,” IEEE Commun. Mag. 34(12), 86–94 (1996). [CrossRef]

–4

K. Okamoto, M. Okuno, A. Himeno, and Y. Ohmori, “16-channel optical add/drop multiplexer consisting of arrayed-waveguide gratings and double-gate switches,” Electron. Lett. 32(16), 1471–1472 (1996). [CrossRef]

], the optical switch matrix as a key component should have a broad bandwidth, a low crosstalk level, a fast switching speed. Previously, an optical 4 × 4 switch matrix using thermo-optically tuned silicon microring resonators or Mach-Zehnder interferometer has been demonstrated microsecond-scale switching speeds [5

N. Sherwood-Droz, H. Wang, L. Chen, B. G. Lee, A. Biberman, K. Bergman, and M. Lipson, “Optical 4 × 4 hitless slicon router for optical networks-on-chip (NoC),” Opt. Express 16(20), 15915–15922 (2008). [CrossRef] [PubMed]

–8

Y. T. Li, J. Z. Yu, S. W. Chen, Y. P. Li, and Y. Y. Chen, “Submicrosecond rearrangeable non-blocking silicon-on-insulator thermo-optic 4 × 4 switch matrix,” Opt. Lett. 32(6), 603–604 (2007). [CrossRef] [PubMed]

], and the one based on 2 × 2 Mach-Zehnder (2 × 2 MZ) electro-optic switching elements, with worst-case cross-talk levels lower than 9 dB and common spectral bandwidth of 7 nm, has been recently reported too [9

M. Yang, W. M. J. Green, S. Assefa, J. Van Campenhout, B. G. Lee, C. V. Jahnes, F. E. Doany, C. L. Schow, J. A. Kash, and Y. A. Vlasov, “Non-blocking 4 × 4 electro-Optic silicon switch for on-chip photonic networks,” Opt. Express 19(1), 47–54 (2011). [CrossRef] [PubMed]

The 2 × 2 nonblocking Mach–Zehnder-based switch is a basic element in both optical space-division and optical time-division switching networks, and can be extended to n × n matrix switch [10

T. Goh, M. Yasu, K. Hattori, A. Himeno, M. Okuno, and Y. Ohmori, “Low-loss and high-extinction-ratio silica-based strictly nonblocking 16 × 16 thermo-optical matrix switch,” IEEE Photon. Technol. Lett. 10(6), 810–812 (1998). [CrossRef]

,11

I. Sawaki, T. Shimoe, H. Nakamoto, T. Iwama, T. Yamane, and H. Nakajima, “Rectangularly configured 4 x 4 Ti:LiNbO₃ matrix switch with low drive voltage,” IEEE J. Sel. Areas Comm. 6(7), 1267–1272 (1988). [CrossRef]

]. Due to the influence of the free carrier dispersion (FCD) coexisting with free carrier absorption (FCA) in silicon, the crosstalk of the traditional 2 × 2 MZ switch decreases with the increase of injection current [12

W. J. Wang, Y. Zhao, H. F. Zhou, Y. L. Hao, J. Y. Yang, M. H. Wang, and X. Q. Jiang, “CMOS-compatible 1×3 silicon electro-optic switch with low crosstalk,” IEEE Photon. Technol. Lett. 23(11), 751–753 (2011). [CrossRef]

–14

Y. Zhao, H. F. Shao, T. Hu, P. Yu, J. Y. Yang, M. H. Wang, and X. Q. Jiang, “A silicon quasi-DOS based on reverse-biased pn diode,” Microw. Opt. Technol. Lett. 54(3), 635–638 (2012). [CrossRef]

], and so it’s difficult to achieve low crosstalk level in the “on” and “off” states at the same time if no special measure is applied. In this paper, we demonstrate a 2 × 2 nonblocking Mach–Zehnder-based switch matrix fabricated by a 0.8-μm standard commercial CMOS line. The device can keep the crosstalk at almost the same level in the “on” and “off” states. It adopts a structure based on four 2 × 2 MZ switching elements and a waveguide crossing. By injecting free carriers into a p-i-n diode phase shifter, the switching is achieved with nanosecond-scale switching response time. Furthermore, the device has low crosstalk level less than −16.1 dB and a common spectral bandwidth of 35 nm. The power consumption of the 2 × 2 switching elements is as low as 1.40 mW.

2. Device design and fabrication

The schematic diagram of the designed switching matrix is shown in Fig. 1(a) . The four input ports are labeled Pi1, Pi2, Pi3, and Pi4, and the output ports are labeled Po1, Po2, Po3, and Po4, accordingly. The presented switch matrix can be treated as either a non-blocking 2 × 2 one, if two inputs and outputs are active, or a blocking 4 × 4 switch matrix. Table 1 shows all physical paths for the 2 × 2 non-blocking switch matrix. For each path, optical signal must pass through two switching elements which is listed in the intersecting cell between a given input port column and output port row.

Fig. 1 (a) Schematic of the 4 × 4 Mach-Zehnder based switch matrix (b) Structure of the 2 × 2 Mach-Zehnder based switching element (c) Ellipse-based crossing waveguide (d) Cross-section of the p-i-n diode phase shifter.

Table 1 Physical Paths for the 2 × 2 Non-Blocking Switch mATRIX

		Output
Input		Output1 (Po1 or Po2)	Output2 (Po3 or Po4)
	Input1 (Pi1 or Pi2)	MZ1 MZ2 (Path 1)	MZ1 MZ4 (Path 2)
	Input2 (Pi3 or Pi4)	MZ3 MZ2 (Path 3)	MZ3 MZ4 (Path 4)

As shown in Fig. 1(b), a pair of multimode imaging (MMI) couplers is used as the 3 db power splitter and combiner in the 2 × 2 MZ switching elements, and phase-shifters embedded with forward p-i-n diodes are designed at the two arms to achieve the switching function. The simulation result of the 2 × 2 MMI is shown in Fig. 2(a) , which was done by using BeamPROP. The result shows the insertion loss of the 2 × 2 MZ switching element is 0.2 db. In order to reduce the scattering loss at the crossing, an ellipse-based crossing waveguide is used in the structure, as depicted in Fig. 1(c). As shown in Fig. 2(b), the simulation of the crossing waveguide was done by using FDTD. This design was optimized in simulation to keep the whole device in a reasonable size and estimated with the value of 0.1–0.3 dB/crossing in the experiment.

Fig. 2 Simulation results of (a)the 2 × 2 MMI and (b) the ellipse-based waveguide crossing

The 2 × 2 nonblocking switch matrix was fabricated on a SOI wafer with a 2-μm thick buried oxide layer and a 1-μm top silicon layer by a 0.8-μm standard commercial CMOS line [15

Y. Zhao, H. F. Zhou, W. J. Wang, J. Y. Yang, M. H. Wang, and X. Q. Jiang, “Fabrication of silicon photonic devices by utilizing industrial CMOS technology,” Proc. SPIE 7516, 1–6 (2009).

]. The top view of this switch matrix and its components and the scanning electron microscope (SEM) photo of a cross-section are shown in the Fig. 3 . Due to the linewidth limitation of the 0.8-μm CMOS line, the waveguide width and slab height on each arm are 1000 nm and 560 nm respectively, as shown in Fig. 1(d). The parameters were chosen to make sure that the waveguide satisfies the single-mode condition [16

R. A. Soref, J. Schmidtchen, and K. Petermann, “Large single-mode rib waveguides in GeSi-Si and Si-on-SiO₂,” IEEE J. Quantum Electron. 27(8), 1971–1974 (1991). [CrossRef]

]. The heavily doped regions with a doping concentration of 10²⁰ cm⁻³ are 1.5-μm away from the rib so as to reduce the absorption loss.

Fig. 3 Top views of (a) the fabricated nonblocking 2 × 2 MZ switch matrix. (b) the ellipse-based waveguide crossing and (c) a swtiching element. (d) SEM photo of a waveguide cross section

3. Measurement

We first characterized the 2 × 2 MZ switch matrix at the wavelength of 1550 nm. A continuous-wave beam, emitted from a diode laser (Anritsu, MT951001A), was coupled into the silicon switch module via a lensed fiber. The output light beam was collected by a power meter (Anritsu, MU931421A) through another connected lensed fiber. When MZ2 was firstly biased at 0.85 V, the switching property of the 2 × 2 switch matrix with the applied voltage on MZ3 at the wavelength of 1550 nm was shown in Fig. 4 . It can be found that when the crosstalk of the switch matrix is almost unchanged at both the “on” and “off” states for Path3. To further characterize the 2 × 2 non-blocking switching matrix, we used a TE-polarized input light from a broadband light source. The output was coupled to an Optical Spectrum Analyzer (ANDO, AQ6317C). The measured transmission spectra are shown in Fig. 5 . The transmission spectrum for a given input port were obtained by coupling light into the switching matrix from the input port and then measuring the spectra of transmitted light at the two output ports. The transmission spectra at the two output ports were normalized. The analysis was the same for the other input port. The observed dominant optical power at Output1 and Output2 are denoted with circle and triangle traces respectively. The two rows represent the transmission spectra from ports Input1 and Input2. It can be found within a bandwidth from 1525 nm to 1560 nm, the best crosstalk of the switching module is up to −29.8 dB, while in the worst case it is −16.1 dB. The spectrum range of our light source is between 1510 nm and 1580 nm. Measurement shows that the insertion loss of the whole 2 × 2 nonblocking optical switching matrix varies from 6.8 dB to 8.9 dB, depending on the switching state and I/O port, and the loss introduced by the structure of the 2 × 2 switching elements is estimated to be 0.8 dB to 1.5 dB. The power consumption is approximately calculated by the eq. P = UI – I²R, where U is the external applied voltage, I the working current, and R the series resistance used to limit the injection current and protect the switch diode in the test system. In the experiment, R is 39 Ω. Measurement shows that the total power consumption varies from 4.55 mW to 22.4 mW, which depends on the switching state and physical path. The electrical voltage and current of the 2 × 2 MZ switching elements are 0.85–1.15 V and 1.65–18.1 mA respectively. Table 2 shows the power consumption at the steady states for different paths. We find that the electric resistance of MZ3 is a little larger than the other elements and so the required power comsumption is larger. Improving the quality of spot welding and fabrication process, we believe that the value of MZ3 can decreased.

Fig. 4 Switching characteristics of 2 × 2 nonblocking switch matrix

Fig. 5 Transmission spectra of the 2 × 2 non-blocking switch matrix. The circle and triangle traces represent the transmission to the Po1 and Po3, respectively. The two columns respectively represent transmittance spectra from the Pi1 and Pi3 ports.

Table 2 Steady State Power Consumption for Each Path

	MZ1	MZ2	MZ3	MZ4
Power in Path1 (mW)	10.1	11.9	-	-
Power in Path2 (mW)	1.40	-	-	13.6
Power in Path3 (mW)	-	1.47	20.9	-
Power in Path4 (mW)	-	-	2.75	1.80

The switching response of the device was also measured. Taking the Path 3 for a brief description, MZ2 was firstly biased at 0.85 V, and subsequently a square-wave signal with a high level voltage of 1.15 V and low level voltage of 0.86 V was applied on MZ3. Its 10%-to-90% transition time is 5 ns. The optical response of port Po1 was monitored by an oscilloscope (LeCroy, 104Xs). Figure 6 shows the response of the output power against time. The 10%-to-90% transition time of the rising and the falling edges were measure to be 17.4 ns and 21 ns respectively.

Fig. 6 Switching characteristic for the switching matrix

The performance of the fabricated four-port switching matrix in this work is mainly limited by the large dimension of the p-i-n diode phase shifters. If the 0.18-μm CMOS technology is utilized, the whole size and power consumption of the device will be declined and the switching speed will be improved. To achieve high crosstalk suppression and low on-chip loss, high-quality fabrication process is desired to improve the uniformity of the MMI and reduce the sidewall roughness [12

,17

K. K. Lee, D. R. Lim, L. C. Kimerling, J. Shin, and F. Cerrina, “Fabrication of ultralow-loss Si/SiO2 waveguides by roughness reduction,” Opt. Lett. 26(23), 1888–1890 (2001). [CrossRef] [PubMed]

,18

N. S. Lagali, M. R. Palam, R. I. MacDonald, K. Worhoff, and A. Driessen, “Analysis of generalized Mach-Zehnder interferometers for variable-ratio power splitting and optimized switching,” J. Lightwave Technol. 17(12), 2542–2550 (1999). [CrossRef]

4. Conclusion

In conclusion, a switch matrix has been demonstrated on SOI wafer by using a 0.8-μm standard commercial CMOS line. It is a non-blocking 2 × 2 switch matrix, and also can be considered as a blocking 4 × 4 one. The measure crosstalk level is found to be between −16.1 dB and −29.8 dB for different switching configurations under a common optical bandwidth of 35 nm. The power consumption of each 2 × 2 switch element varies from 1.40 mW to 20.9 mW, depending on the switching element and its switching state. The dynamic switching response times are 17.4 ns for rising edge and 21 ns for falling edge. These characteristics make the proposed switch matrix suitable for application in realizing optical network.

Acknowledgments

This work is supported by the Natural Science Foundation of China under Grants 60977043, the 863 project under Grant 2012AA012203, and the Tang Zhongyin Fund. The authors would like thank Silan Microelectronics Co., LTD, and the Innovation Platform for Micro and Nano Device and System Integration, Zhejiang University, for the fabrication process.

References and links

1.	T. Barwicz, H. Byun, F. Gan, C. W. Holzwarth, M. A. Popovic, P. T. Rakich, M. R. Watts, E. P. Ippen, F. X. Kartner, H. I. Smith, J. S. Orcutt, R. J. Ram, V. Stojanovic, O. O. Olubuyide, J. L. Hoyt, S. Spector, M. Geis, M. Grein, T. Lyszczarz, and J. U. Yoon, “Silicon photonics for compact, energy-efficient interconnects [Invited],” J. Opt. Netw. 6(1), 63–73 (2007). [CrossRef]
2.	K. Sato, “Photonic transport network OAM technologies,” IEEE Commun. Mag. 34(12), 86–94 (1996). [CrossRef]
3.	A. Himeno, R. Nagase, T. Ito, K. Kato, and M. Okuno, “Photonic intermodule connector using 8×8 optical switches for near-future electronic switching systems,” IEICE Trans. Commun. E77-B, 155–162 (1994).
4.	K. Okamoto, M. Okuno, A. Himeno, and Y. Ohmori, “16-channel optical add/drop multiplexer consisting of arrayed-waveguide gratings and double-gate switches,” Electron. Lett. 32(16), 1471–1472 (1996). [CrossRef]
5.	N. Sherwood-Droz, H. Wang, L. Chen, B. G. Lee, A. Biberman, K. Bergman, and M. Lipson, “Optical 4 × 4 hitless slicon router for optical networks-on-chip (NoC),” Opt. Express 16(20), 15915–15922 (2008). [CrossRef] [PubMed]
6.	B. G. Lee, A. Biberman, J. Chan, and K. Bergman, “High-performance modulators and switches for silicon photonic networks-on-chip,” IEEE J. Sel. Top. Quantum Electron. 16(1), 6–22 (2010). [CrossRef]
7.	A. Biberman, B. G. Lee, N. Sherwood-Droz, M. Lipson, and K. Bergman, “Broadband operation of nanophotonic router for silicon photonic networks-on-chip,” IEEE Photon. Technol. Lett. 22(12), 926–928 (2010). [CrossRef]
8.	Y. T. Li, J. Z. Yu, S. W. Chen, Y. P. Li, and Y. Y. Chen, “Submicrosecond rearrangeable non-blocking silicon-on-insulator thermo-optic 4 × 4 switch matrix,” Opt. Lett. 32(6), 603–604 (2007). [CrossRef] [PubMed]
9.	M. Yang, W. M. J. Green, S. Assefa, J. Van Campenhout, B. G. Lee, C. V. Jahnes, F. E. Doany, C. L. Schow, J. A. Kash, and Y. A. Vlasov, “Non-blocking 4 × 4 electro-Optic silicon switch for on-chip photonic networks,” Opt. Express 19(1), 47–54 (2011). [CrossRef] [PubMed]
10.	T. Goh, M. Yasu, K. Hattori, A. Himeno, M. Okuno, and Y. Ohmori, “Low-loss and high-extinction-ratio silica-based strictly nonblocking 16 × 16 thermo-optical matrix switch,” IEEE Photon. Technol. Lett. 10(6), 810–812 (1998). [CrossRef]
11.	I. Sawaki, T. Shimoe, H. Nakamoto, T. Iwama, T. Yamane, and H. Nakajima, “Rectangularly configured 4 x 4 Ti:LiNbO₃ matrix switch with low drive voltage,” IEEE J. Sel. Areas Comm. 6(7), 1267–1272 (1988). [CrossRef]
12.	W. J. Wang, Y. Zhao, H. F. Zhou, Y. L. Hao, J. Y. Yang, M. H. Wang, and X. Q. Jiang, “CMOS-compatible 1×3 silicon electro-optic switch with low crosstalk,” IEEE Photon. Technol. Lett. 23(11), 751–753 (2011). [CrossRef]
13.	H. F. Zhou, Y. Zhao, W. J. Wang, J. Y. Yang, M. H. Wang, and X. Q. Jiang, “Performance influence of carrier absorption to the Mach-Zehnder-interference based silicon optical switches,” Opt. Express 17, 7043–7051 (2009). [CrossRef] [PubMed]
14.	Y. Zhao, H. F. Shao, T. Hu, P. Yu, J. Y. Yang, M. H. Wang, and X. Q. Jiang, “A silicon quasi-DOS based on reverse-biased pn diode,” Microw. Opt. Technol. Lett. 54(3), 635–638 (2012). [CrossRef]
15.	Y. Zhao, H. F. Zhou, W. J. Wang, J. Y. Yang, M. H. Wang, and X. Q. Jiang, “Fabrication of silicon photonic devices by utilizing industrial CMOS technology,” Proc. SPIE 7516, 1–6 (2009).
16.	R. A. Soref, J. Schmidtchen, and K. Petermann, “Large single-mode rib waveguides in GeSi-Si and Si-on-SiO₂,” IEEE J. Quantum Electron. 27(8), 1971–1974 (1991). [CrossRef]
17.	K. K. Lee, D. R. Lim, L. C. Kimerling, J. Shin, and F. Cerrina, “Fabrication of ultralow-loss Si/SiO2 waveguides by roughness reduction,” Opt. Lett. 26(23), 1888–1890 (2001). [CrossRef] [PubMed]
18.	N. S. Lagali, M. R. Palam, R. I. MacDonald, K. Worhoff, and A. Driessen, “Analysis of generalized Mach-Zehnder interferometers for variable-ratio power splitting and optimized switching,” J. Lightwave Technol. 17(12), 2542–2550 (1999). [CrossRef]

OCIS Codes
(250.0250) Optoelectronics : Optoelectronics
(250.6715) Optoelectronics : Switching

ToC Category:
Optoelectronics

History
Original Manuscript: March 21, 2012
Revised Manuscript: May 11, 2012
Manuscript Accepted: May 14, 2012
Published: May 18, 2012

Citation
Weiwei Chen, Wanjun Wang, Weifeng Guo, Zhao Gong, Haiquan Zhou, Qiang Zhou, Xiaoqing Jiang, and Jianyi Yang, "A 2 × 2 nonblocking Mach–Zehnder-based silicon switch matrix," Opt. Express 20, 12593-12598 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-11-12593

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References

T. Barwicz, H. Byun, F. Gan, C. W. Holzwarth, M. A. Popovic, P. T. Rakich, M. R. Watts, E. P. Ippen, F. X. Kartner, H. I. Smith, J. S. Orcutt, R. J. Ram, V. Stojanovic, O. O. Olubuyide, J. L. Hoyt, S. Spector, M. Geis, M. Grein, T. Lyszczarz, and J. U. Yoon, “Silicon photonics for compact, energy-efficient interconnects [Invited],” J. Opt. Netw.6(1), 63–73 (2007). [CrossRef]
K. Sato, “Photonic transport network OAM technologies,” IEEE Commun. Mag.34(12), 86–94 (1996). [CrossRef]
A. Himeno, R. Nagase, T. Ito, K. Kato, and M. Okuno, “Photonic intermodule connector using 8×8 optical switches for near-future electronic switching systems,” IEICE Trans. Commun.E77-B, 155–162 (1994).
K. Okamoto, M. Okuno, A. Himeno, and Y. Ohmori, “16-channel optical add/drop multiplexer consisting of arrayed-waveguide gratings and double-gate switches,” Electron. Lett.32(16), 1471–1472 (1996). [CrossRef]
N. Sherwood-Droz, H. Wang, L. Chen, B. G. Lee, A. Biberman, K. Bergman, and M. Lipson, “Optical 4 × 4 hitless slicon router for optical networks-on-chip (NoC),” Opt. Express16(20), 15915–15922 (2008). [CrossRef] [PubMed]
B. G. Lee, A. Biberman, J. Chan, and K. Bergman, “High-performance modulators and switches for silicon photonic networks-on-chip,” IEEE J. Sel. Top. Quantum Electron.16(1), 6–22 (2010). [CrossRef]
A. Biberman, B. G. Lee, N. Sherwood-Droz, M. Lipson, and K. Bergman, “Broadband operation of nanophotonic router for silicon photonic networks-on-chip,” IEEE Photon. Technol. Lett.22(12), 926–928 (2010). [CrossRef]
Y. T. Li, J. Z. Yu, S. W. Chen, Y. P. Li, and Y. Y. Chen, “Submicrosecond rearrangeable non-blocking silicon-on-insulator thermo-optic 4 × 4 switch matrix,” Opt. Lett.32(6), 603–604 (2007). [CrossRef] [PubMed]
M. Yang, W. M. J. Green, S. Assefa, J. Van Campenhout, B. G. Lee, C. V. Jahnes, F. E. Doany, C. L. Schow, J. A. Kash, and Y. A. Vlasov, “Non-blocking 4 × 4 electro-Optic silicon switch for on-chip photonic networks,” Opt. Express19(1), 47–54 (2011). [CrossRef] [PubMed]
T. Goh, M. Yasu, K. Hattori, A. Himeno, M. Okuno, and Y. Ohmori, “Low-loss and high-extinction-ratio silica-based strictly nonblocking 16 × 16 thermo-optical matrix switch,” IEEE Photon. Technol. Lett.10(6), 810–812 (1998). [CrossRef]
I. Sawaki, T. Shimoe, H. Nakamoto, T. Iwama, T. Yamane, and H. Nakajima, “Rectangularly configured 4 x 4 Ti:LiNbO3 matrix switch with low drive voltage,” IEEE J. Sel. Areas Comm.6(7), 1267–1272 (1988). [CrossRef]
W. J. Wang, Y. Zhao, H. F. Zhou, Y. L. Hao, J. Y. Yang, M. H. Wang, and X. Q. Jiang, “CMOS-compatible 1×3 silicon electro-optic switch with low crosstalk,” IEEE Photon. Technol. Lett.23(11), 751–753 (2011). [CrossRef]
H. F. Zhou, Y. Zhao, W. J. Wang, J. Y. Yang, M. H. Wang, and X. Q. Jiang, “Performance influence of carrier absorption to the Mach-Zehnder-interference based silicon optical switches,” Opt. Express17, 7043–7051 (2009). [CrossRef] [PubMed]
Y. Zhao, H. F. Shao, T. Hu, P. Yu, J. Y. Yang, M. H. Wang, and X. Q. Jiang, “A silicon quasi-DOS based on reverse-biased pn diode,” Microw. Opt. Technol. Lett.54(3), 635–638 (2012). [CrossRef]
Y. Zhao, H. F. Zhou, W. J. Wang, J. Y. Yang, M. H. Wang, and X. Q. Jiang, “Fabrication of silicon photonic devices by utilizing industrial CMOS technology,” Proc. SPIE7516, 1–6 (2009).
R. A. Soref, J. Schmidtchen, and K. Petermann, “Large single-mode rib waveguides in GeSi-Si and Si-on-SiO2,” IEEE J. Quantum Electron.27(8), 1971–1974 (1991). [CrossRef]
K. K. Lee, D. R. Lim, L. C. Kimerling, J. Shin, and F. Cerrina, “Fabrication of ultralow-loss Si/SiO2 waveguides by roughness reduction,” Opt. Lett.26(23), 1888–1890 (2001). [CrossRef] [PubMed]
N. S. Lagali, M. R. Palam, R. I. MacDonald, K. Worhoff, and A. Driessen, “Analysis of generalized Mach-Zehnder interferometers for variable-ratio power splitting and optimized switching,” J. Lightwave Technol.17(12), 2542–2550 (1999). [CrossRef]

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