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Radiation-resistant erbium-doped-nanoparticles optical fiber for space applications |
Optics Express, Vol. 20, Issue 3, pp. 2435-2444 (2012)
http://dx.doi.org/10.1364/OE.20.002435
Acrobat PDF (1208 KB)
Abstract
We demonstrate for the first time a radiation-resistant Erbium-Doped Fiber exhibiting performances that can fill the requirements of Erbium-Doped Fiber Amplifiers for space applications. This is based on an Aluminum co-doping atom reduction enabled by Nanoparticules Doping-Process. For this purpose, we developed several fibers containing very different erbium and aluminum concentrations, and tested them in the same optical amplifier configuration. This work allows to bring to the fore a highly radiation resistant Erbium-doped pure silica optical fiber exhibiting a low quenching level. This result is an important step as the EDFA is increasingly recognized as an enabling technology for the extensive use of photonic sub-systems in future satellites.
© 2012 OSA
1. Introduction
2. State of the art
3. Nanoparticles-doped radiation-resistant EDFs design and fabrication
3.1. Fabrication of NP-doped EDF by MCVD
3.2. EDFs and EDFAs under test
- the “Al-NB” fiber, obtained by classical fabrication process, contains much lower Aluminum than standard EDFs, leading to a Narrower Bandwidth (NB). However, this fiber exhibits an Erbium concentration close to the one of standard EDF.
- the “Al-LB” fiber is also obtained by classical fabrication process while including much higher Erbium level and containing an Aluminum concentration similar to standard EDF. It permits to build an amplifier shorter than if we used standard EDF.
- the “NP-Al” fiber is a hugely Erbium-doped fiber that takes advantage of NP CVD process. The nanoparticles here are Erbium-doped Alumina NPs. Thanks to this technology, the Erbium concentration is much higher than the one of the “Al-LB” while we slightly reduced the amount of Aluminum (see Table 1). This design is attractive because a short amplifier with lower RIA can be designed by this way.
- the “NP-Si” fiber is a first generation pure silica NP CVD optical fiber. The Erbium was inserted in the host matrix by means of pure-silica Erbium-Doped NPs. Thanks to this process, we can reach Aluminum-free Erbium-doped fiber with low quenching effect, because the close neighborhood of the Erbium is controlled by the silica encapsulation provided by the NPs. Indeed, in spite of the lack of Aluminum, the output power with an optimal-length amplifier is close to the output power reached with standard EDF, such as Al-NB or Al-LB in this paper. This demonstrates that the Erbium proportion involved in a quenching process is small [11]. However, this fiber does not benefit of the Aluminum codoping, and exhibits a small Erbium concentration, leading to long length amplifiers.
- the “NP-Si+” is the second generation of the aforementioned “NP-Si” fiber, including a higher Erbium proportion and reaching concentration levels not so far to the ones of standard EDF.
4. Irradiation experiments, results and discussions
4.1. Irradiation set-up
- the instruments area: this place contains a co-propagative pump configuration with 2 lasers, one at the signal wavelength (1550 nm) and the other one at the pump wavelength (980 nm). After the MUX, each laser light passes through an HI1060-Flexcore optical switch exhibiting transmittance fluctuations smaller than 0.2dB. The EDFA configurations are tested in amplification saturation regime with 0dBm input signal power and pump power exhibited in table 1 (both are to be considered at the point labeled “Input Power” in Fig. 2), whereas the RIA is tested far below the absorption saturation power. In order to reach high accuracy Noise Factor measurements, the signal laser is an Extended-Cavity Diode Laser (ECDL), which exhibits much lower Amplified Spontaneous Emission (ASE) levels than conventional DFB laser diodes. Moreover, this laser is used at the highest available power, which allows to reach a better rejection of the ASE, relatively to the laser line power ; the optical power at the input of the fiber at the signal wavelength is then adjusted thanks to an optical attenuator.
- the gamma-irradiation facility: because the nature of radiation (X-rays, gamma, protons, electrons. . .) does not strongly influence the degradation [15], we simply performed gamma irradiation of all the 5 optical amplifiers. Fibers “Al-NB”, “Al-LB” and “NP-Si” were irradiated at ONERA in Toulouse (France) by means of 60Co source 5Gy/h, and both the “NP-Al” and “NP-Si+” were irradiated at Louvain-la-Neuve University in Belgium, still using a 60Co source, but in the 12Gy/h–14Gy/h dose rate range.
S. Girard, B. Tortech, E. Régnier, M. V. Uffelen, A. Gusarov, Y. Ouerdane, J. Baggio, P. Paillet, V. Ferlet-Cavrois, A. Boukenter, J.-P. Meunier, F. Berghmans, J. R. Schwank, M. R. Shaneyflet, J. A. Felix, E. Blackmore, and H. Thienpont, “Proton and gamma-induced effects on erbium-doped optical Fibers,” IEEE Trans. Nucl. Sci. 54(6), 2426–2434 (2007).
4.2. In-line output-power measurements under radiation
- following first the “ultimately low RIA Erbium-doped fiber” way to reach radiation-resistant amplifiers, the result displayed in Fig. 4 is clear: the most radiation-resistant EDFA uses the less Aluminum-doped fiber with a quite short optimal length. To our knowledge, this compromise can only be obtained thanks to the NP CVD process. Indeed, reaching similar Erbium concentration with classical fabrication process requires a quite small part of Aluminum which is enough to induce a gain decrease by many dB.
- Concerning the “short-length high Erbium-concentration” radiation-resistant amplifier way, we demonstrate, once more, that NP CVD fibers are much more interesting than classically fabricated fibers. Indeed, the results obtained with “NP-Al” and “Al-LB” clearly show that, at comparable Aluminum concentration, a much stronger resistance to radiations can be obtained.
4.3. Irradiated EDFA optimal length
- as long as the degradation at pump wavelength is not too strong, the optimal length does not change significantly as a function of the deposited dose, and thus so does the output power, as shown in Fig. 5(b).
- however, once the degradation at pump wavelength is strong, the population inversion cannot be maintained over the whole fibre length (see Fig. 5(a)) and the amplifier reaches a strong absorption regime.
4.4. Pre- and post-irradiation noise factor
5. Conclusion
References and links
OCIS Codes
(060.2410) Fiber optics and optical communications : Fibers, erbium
(350.5610) Other areas of optics : Radiation
(350.6090) Other areas of optics : Space optics
ToC Category:
Fiber Optics and Optical Communications
History
Original Manuscript: October 11, 2011
Revised Manuscript: December 16, 2011
Manuscript Accepted: January 4, 2012
Published: January 19, 2012
Citation
Jérémie Thomas, Mikhaël Myara, Laurent Troussellier, Ekaterina Burov, Alain Pastouret, David Boivin, Gilles Mélin, Olivier Gilard, Michel Sotom, and Philippe Signoret, "Radiation-resistant erbium-doped-nanoparticles optical fiber for space applications," Opt. Express 20, 2435-2444 (2012)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-20-3-2435
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References
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