1.56 µm 1 watt single frequency semiconductor disk laser

doi:10.1364/OE.21.002355

1.56 µm 1 watt single frequency semiconductor disk laser

Antti Rantamäki, Jussi Rautiainen, Alexei Sirbu, Alexandru Mereuta, Eli Kapon, and Oleg G. Okhotnikov »View Author Affiliations

Optics Express, Vol. 21, Issue 2, pp. 2355-2360 (2013)
http://dx.doi.org/10.1364/OE.21.002355

View Full Text Article

Acrobat PDF (1621 KB)

Journal Search
Article Lookup

Article Tools

Citations

Alert me when this article is cited
Export Citation/Save

Article Navigation

▸ Article Outline
– Abstract
1. Introduction
2. Experimental
4. Conclusion
– References and links

Article Tools
Full Text
Article Info
References
Cited By
Figures
Metrics
Download PDF

Viewing Equations in the
HTML Article

Optimal Viewing Recommendations

Full Text
Article Info
References (41)
Cited By
Figures (4)
Metrics

Abstract

A single frequency wafer-fused semiconductor disk laser at 1.56 µm with 1 watt of output power and a coherence length over 5 km in fiber is demonstrated. The result represents the highest output power reported for a narrow-line semiconductor disk laser operating at this spectral range. The study shows the promising potential of the wafer fusion technique for power scaling of single frequency vertical-cavity lasers emitting in the 1.3-1.6 µm range.

1. Introduction

Semiconductor disk lasers (SDLs) combine the power scaling properties of thin disk lasers with the wavelength scalability inherent to semiconductor technology. The performance of these devices critically depends on efficient heat removal from the active medium, which is conventionally based on the flip-chip approach or the intracavity heat spreader approach [1

O. Okhotnikov, Semiconductor Disk Lasers (Wiley-VCH, 2010).

, 2

A. Maclean, R. Birch, P. Roth, A. Kemp, and D. Burns, “Limits on efficiency and power scaling in semiconductor disk lasers with diamond heatspreaders,” J. Opt. Soc. Am. B 26(12), 2228–2236 (2009). [CrossRef]

]. While in the flip-chip design heat is extracted through the distributed Bragg reflector (DBR), in the intracavity heat spreader design heat is extracted directly from the light emitting top surface of the gain chip using a transparent heat dissipater with high thermal conductivity. The optimal strategy for thermal management depends largely on the targeted power level, the wavelength range that determines the composition of the SDL structure and the application.

The flip-chip approach is more appropriate for devices with high thermal conductivity DBRs and large pump spot diameters, whereas the intracavity heat removal is preferred with low thermal conductivity DBRs and small pump spots [1

O. Okhotnikov, Semiconductor Disk Lasers (Wiley-VCH, 2010).

, 2

]. Generally speaking, the flip-chip design is superior for the spectral range around 1 μm where GaAs/AlAs DBRs offer high thermal conductivity, while the intracavity heatspreader technique is preferred with low performance DBRs at other wavelengths [3

S. Calvez, J. Hastie, M. Guina, O. Okhotnikov, and M. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photon. Rev. 3(5), 407–434 (2009). [CrossRef]

, 4

N. Schulz, J. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photon. Rev. 2(3), 160–181 (2008). [CrossRef]

]. In particular, monolithically grown InP-based SDLs operating at wavelengths 1.3-1.6 μm suffer from increased DBR layer thicknesses, a greater number of constituent DBR layer pairs needed to cope with the low refractive index contrast between the layers, and significantly lowered thermal conductivity of the available compounds. Accordingly, SDLs intended for operation at 1.3-1.6 μm mainly utilize intracavity diamond heatspreaders that avoid the poor heat transfer through the DBR by creating the short heat removal path between the gain medium and heat spreader [2

, 5

H. Lindberg, M. Strassner, E. Gerster, J. Bengtsson, and A. Larsson, “Thermal management of optically pumped long-wavelength InP-based semiconductor disk lasers,” IEEE J. Sel. Top. Quantum Electron. 11(5), 1126–1134 (2005). [CrossRef]

, 6

A. Kemp, G. Valentine, J. Hopkins, J. Hastie, S. Smith, S. Calvez, M. Dawson, and D. Burns, “Thermal management in vertical-external-cavity surface-emitting lasers: Finite-element analysis of a heatspreader approach,” IEEE J. Quantum Electron. 41(2), 148–155 (2005). [CrossRef]

]. The intracavity heatspreader also provides an efficient means for suppressing thermal lensing in the gain element [5

, 7

A. Kemp, J. Hopkins, A. Maclean, N. Schulz, M. Rattunde, J. Wagner, and D. Burns, “Thermal management in 2.3-µm semiconductor disk lasers: a finite element analysis,” IEEE J. Quantum Electron. 44(2), 125–135 (2008). [CrossRef]

In addition to their wavelength and power scalability, the high-Q cavity inherent to SDLs makes them ideal for single frequency operation [8

A. Ouvrard, A. Garnac, L. Cerutti, F. Genty, and D. Romanini, “Single-frequency tunable Sb-based VCSELs emitting at 2.3 µm,” IEEE Photon. Technol. Lett. 17(10), 2020–2022 (2005). [CrossRef]

–10

A. Garnache, A. Ouvrard, and D. Romanini, “Single-frequency operation of external-cavity VCSELs: non-linear multimode temporal dynamics and quantum limit,” Opt. Express 15(15), 9403–9417 (2007). [CrossRef] [PubMed]

] with several applications including laser communications, light detection and ranging (LIDAR), spectroscopy, sensing and seed laser operation [11

C. Spiegelberg, J. Geng, Y. Hu, Y. Kaneda, S. Jiang, and N. Peyghambarian, “Low-noise narrow-linewidth fiber laser at 1550 nm,” J. Lightwave Technol. 22(1), 57–62 (2004). [CrossRef]

, 12

S. Spießberger, M. Schiemangk, A. Sahm, A. Wicht, H. Wenzel, A. Peters, G. Erbert, and G. Tränkle, “Micro-integrated 1 Watt semiconductor laser system with a linewidth of 3.6 kHz,” Opt. Express 19(8), 7077–7083 (2011). [CrossRef] [PubMed]

]. The single longitudinal mode operation of SDLs is typically obtained by utilizing short-length cavities of 5-30 mm [10

, 13

A. Laurain, M. Myara, G. Beaudoin, I. Sagnes, and A. Garnache, “Multiwatt-power highly-coherent compact single-frequency tunable Vertical-External-Cavity-Surface-Emitting-Semiconductor-Laser,” Opt. Express 18(14), 14627–14636 (2010). [CrossRef] [PubMed]

, 14

F. Camargo, S. Janicot, I. Sagnes, A. Garnache, P. Georges, and G. Lucas-Leclin, “Evaluation of the single-frequency operation of a short vertical external-cavity semiconductor laser at 852 nm,” Proc. SPIE 8242, 82420F (2012). [CrossRef]

] or by introducing wavelength selective elements into the cavity [15

M. Jacquemet, M. Domenech, G. Lucas-Leclin, P. Georges, J. Dion, M. Strassner, I. Sagnes, and A. Garnache, “Single-frequency CW vertical external cavity surface emitting semiconductor laser at 1003 nm and 501 nm by intracavity frequency doubling,” Appl. Phys. B 86(3), 503–510 (2007). [CrossRef]

, 16

R. Abram, K. Gardner, E. Riis, and A. Ferguson, “Narrow linewidth operation of a tunable optically pumped semiconductor laser,” Opt. Express 12(22), 5434–5439 (2004). [CrossRef] [PubMed]

]. However, it should be noted that the noise of the pumping source could limit the achievable linewidth of an optically-pumped SDL [10

, 13

, 15

Though numerous narrow-line SDLs operating at broad spectral range have been demonstrated [13

, 17

Y. Kaneda, M. Fallahi, J. Hader, J. V. Moloney, S. W. Koch, B. Kunert, and W. Stoltz, “Continuous-wave single-frequency 295 nm laser source by a frequency-quadrupled optically pumped semiconductor laser,” Opt. Lett. 34(22), 3511–3513 (2009). [CrossRef] [PubMed]

–19

A. Laurain, L. Cerutti, M. Myara, and A. Garnache, “2.7 µm single-frequency TEM₀₀ operation of Sb-based diode-pumped external-cavity VCSEL,” Proc. SPIE 8242, 82420 L –82421 (2012).

], single frequency SDLs emitting in the telecom range of 1.55 μm represent a big challenge because monolithically grown structures suffer from low-quality DBRs that limit the obtainable output power [20

C. Symonds, J. Dion, I. Sagnes, M. Dainese, M. Strassner, L. Leroy, and J. Oudar, “High performance 1.55 µm vertical external cavity surface emitting laser with broad-band integrated dielectric-metal mirror,” Electron. Lett. 40(12), 734–735 (2004). [CrossRef]

–23

H. Lindberg, M. Strassner, E. Gerster, and A. Larsson, “0.8 W optically pumped vertical external cavity surface emitting laser operating CW at 1550 nm,” Electron. Lett. 40(10), 601–602 (2004). [CrossRef]

]. To date, the best performance in single frequency operation around 1.55 μm has been obtained with a monolithic InP-based laser utilizing a thin intracavity diamond heatspreader that also acted as an intracavity filter [24

H. Lindberg, A. Larsson, and M. Strassner, “Single-frequency operation of a high-power, long-wavelength semiconductor disk laser,” Opt. Lett. 30(17), 2260–2262 (2005). [CrossRef] [PubMed]

]. The obtained output power at room temperature was 170 mW.

Recently, we have demonstrated a wafer-fusion technique that allows the integration of high-quality GaAs/AlGaAs DBRs with InP-based active regions and, consequently, the power scaling of 1.3-1.6 μm SDLs to multi-watt levels [25

J. Lyytikäinen, J. Rautiainen, L. Toikkanen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “1.3-microm optically-pumped semiconductor disk laser by wafer fusion,” Opt. Express 17(11), 9047–9052 (2009). [CrossRef] [PubMed]

–29

A. Rantamäki, J. Rautiainen, J. Lyytikäinen, A. Sirbu, A. Mereuta, E. Kapon, and O. G. Okhotnikov, “1 W at 785 nm from a frequency-doubled wafer-fused semiconductor disk laser,” Opt. Express 20(8), 9046–9051 (2012). [CrossRef] [PubMed]

]. In this letter, we report a wafer-fused single frequency SDL with 1 watt of output power and a coherence length longer than 5 km in single mode fiber. The result represents the highest output power obtained from a single frequency SDL at this wavelength range and is the first demonstration of a narrow-line wafer-fused SDL.

2. Experimental

The active region of the resonant periodic gain structure was grown by low pressure metalorganic vapor phase epitaxy (LP MOVPE) on an InP substrate. The gain region comprises 5 pairs of compressively strained AlGaInAs quantum wells (QWs) that were placed at the antinodes of the optical field. The measured photoluminescence peak is centered near 1520 nm at room temperature. The DBR was grown by solid source molecular beam epitaxy (SS MBE) on a GaAs substrate and comprises 35 pairs of quarter-wave thick GaAs/Al_0.9Ga_0.1As pairs. The active region and the DBR were fused together using a process described in [30

A. Sirbu, N. Volet, A. Mereuta, J. Lyytikäinen, J. Rautiainen, O. Okhotnikov, J. Walczak, M. Wasiak, T. Czyszanowski, and A. Caliman, “Wafer-fused optically pumped VECSELs emitting in the 1310-nm and 1550-nm wavebands,” Adv. Opt. Technol. 2011, 209093 (2011).

]. The InP substrate was then removed by wet-etching using HCl and the GaInAsP etch-stop was removed using H₃PO₄:H₂O₂:H₂O. The assembly was cut into pieces of 2.5 × 2.5 mm² and the gain chip was capillary bonded to a 3 × 3 × 0.3 mm³ intracavity diamond using de-ionized water [31

Z. L. Liau, “Semiconductor wafer bonding via liquid capillarity,” Appl. Phys. Lett. 77(5), 651–653 (2000). [CrossRef]

]. Finally, the top surface of the diamond was pressed against a copper plate using a piece of Teflon [32

M. Guina, T. Leinonen, A. Härkönen, and M. Pessa, “High-power disk lasers based on dilute nitride heterostructures,” New J. Phys. 11(12), 125019 (2009). [CrossRef]

]. The copper plate had a 2 mm diameter circular aperture for the signal and pump beams. Thin indium foil was placed between the diamond and the copper plate to ensure good mechanical and thermal contact. The temperature of the gain element was controlled by placing it on a Peltier cooler.

A schematic of the laser V-cavity is shown in Fig. 1 . The optical pumping was performed with a 980 nm fiber-coupled diode laser that was focused onto an approximately Gaussian spot with a diameter of 300 µm at the gain element. The total cavity length was 32 cm with cavity arms of 12 cm and 20 cm. The cavity design, low thermal lensing in the gain element and accurate cavity alignment ensured the overlap between the pump spot and the fundamental cavity mode [5

, 7

, 33

R. Paschotta, “Beam quality deterioration of lasers caused by intracavity beam distortions,” Opt. Express 14(13), 6069–6074 (2006). [CrossRef] [PubMed]

]. Two fused silica etalons with thicknesses of 500 µm and 750 µm were inserted into the cavity to facilitate single frequency operation. Single frequency operation was also obtainable using just one etalon, but only at small intervals of pump power with a given etalon angle. The second etalon allowed fixing the laser wavelength to the middle of the gain bandwidth and, consequently, enabled single frequency operation at all pump powers without any further alignment. The optimal alignment of the etalons corresponded to nearly normal incidence of the intracavity radiation. The actual position of the etalons within the cavity was not critical to the single frequency operation.

Fig. 1 Schematic of the laser cavity. HR: high reflective; RoC: radius of curvature.

The output power in single frequency operation as a function of pump power is shown in Fig. 2 , with the output spectrum shown in the inset. Variation up to 25% was observed in the output power by changing the location of spot on the gain material. The single frequency operation was confirmed with a scanning Fabry-Perot interferometer (FPI) with a free spectral range of 1.5 GHz. The FPI spectrum is shown in Fig. 3 . The inset of Fig. 3 displays a close-up of the instrument resolution limited 18 MHz (FWHM) line.

Fig. 2 Output power in single frequency regime as a function of pump power at two gain element temperatures. The output spectrum and the output beam at the highest output power are shown in the inset.

Fig. 3 Scanning Fabry-Perot spectrum taken at output power of 950 mW. The free-spectral range of the FPI is 1.5 GHz. A close-up of the 18 MHz (FWHM) line is shown in the inset.

The linewidth of the laser was then characterized using a delayed self-heterodyne interferometer (DSHI) with a 25 µs delay and 100 MHz acousto-optic modulator [34

T. Okoshi, K. Kikuchi, and A. Nakayama, “Novel method for high resolution measurement of laser output spectrum,” Electron. Lett. 16(16), 630–631 (1980). [CrossRef]

]. The DSHI output is shown in Fig. 4 with 40 kHz oscillations in the wings of the signal. These oscillations correspond to the inverse of the DSHI delay time and indicate that the coherence length of our laser is longer than the 5 km DSHI fiber delay [35

L. Richter, H. Mandelberg, M. Kruger, and P. McGrath, “Linewidth determination from self-heterodyne measurements with subcoherence delay times,” IEEE J. Quantum Electron. 22(11), 2070–2074 (1986). [CrossRef]

–37

J. Geng, C. Spiegelberg, and S. Jiang, “Narrow linewidth fiber laser for 100-km optical frequency domain reflectometry,” IEEE Photon. Technol. Lett. 17(9), 1827–1829 (2005). [CrossRef]

]. Figure 4 also shows a theoretical fitting of a purely Lorentzian-shaped signal that is provided as a reference for the overall signal shape, excluding the peak in the middle [35

]. It should be noted that an accurate value for the laser linewidth would not be reliably obtainable using a more advanced fitting procedure accounting for both Loretzian and Gaussian spectral distributions [38

L. B. Mercer, “1/f frequency noise effects on self-heterodyne linewidth measurements,” J. Lightwave Technol. 9(4), 485–493 (1991). [CrossRef]

, 39

J. P. Tourrenc, P. Signoret, M. Myara, M. Bellon, J. P. Perez, J. M. Gosalbes, R. Alabedra, and B. Orsal, “Low-frequency FM-noise-induced lineshape: a theoretical and experimental approach,” IEEE J. Quantum Electron. 41(4), 549–553 (2005). [CrossRef]

] due to the large number of free parameters [40

S. Viciani, M. Gabrysch, F. Marin, F. M. Sopra, M. Moser, and K. H. Gulden, “Lineshape of a vertical cavity surface emitting laser,” Opt. Commun. 206(1), 89–97 (2002). [CrossRef]

, 41

A. Garnache, M. Myara, A. Laurain, A. Bouchier, J. Perez, P. Signoret, I. Sagnes, and D. Romanini, “Single frequency free-running low noise compact extended-cavity semiconductor laser at high power level,” Proc. Int. Conf. Space Opt. S17, 257–258 (2008). http://www.congrexprojects.com/icso/2008-proceedings-ppts.

]. Nevertheless, the DSHI measurement allows concluding that the coherence length of our laser is longer than the 5 km fiber delay. The corresponding linewidths for Lorentzian and Gaussian spectral distributions are 13 kHz and 18 kHz, respectively, with the Gaussian spectral distribution providing a realistic approximation for the upper limit of the laser linewidth [13

, 18

B. Rösener, S. Kaspar, M. Rattunde, T. Töpper, C. Manz, K. Köhler, O. Ambacher, and J. Wagner, “2 μm semiconductor disk laser with a heterodyne linewidth below 10 kHz,” Opt. Lett. 36(18), 3587–3589 (2011). [CrossRef] [PubMed]

]. The positioning of the operation spot over the gain material did not have measurable effect on the laser linewidth.

Fig. 4 Delayed self-heterodyne interferometer spectrum taken at output power of 600 mW. In red: theoretical fitting.

4. Conclusion

We demonstrated a single frequency semiconductor disk laser operating at wavelength 1.56 μm with 1 watt of output power and a coherence length longer than 5 km in fiber. The result represents the highest output power reported from a single frequency SDL operating at this wavelength range and is the first demonstration of a wafer-fused single frequency SDL. The study shows the promising potential of wafer-fusion for obtaining high-power narrow-linewidth operation of SDLs in the wavelength range of 1.3-1.6 μm.

Acknowledgments

The authors acknowledge the technical help of Vladimir Iakovlev from EPFL Lausanne, Switzerland, and Sanna Ranta, Miki Tavast and Jari Lyytikäinen from the Optoelectronics Research Centre, Tampere University of Technology.

References and links

1.	O. Okhotnikov, Semiconductor Disk Lasers (Wiley-VCH, 2010).
2.	A. Maclean, R. Birch, P. Roth, A. Kemp, and D. Burns, “Limits on efficiency and power scaling in semiconductor disk lasers with diamond heatspreaders,” J. Opt. Soc. Am. B 26(12), 2228–2236 (2009). [CrossRef]
3.	S. Calvez, J. Hastie, M. Guina, O. Okhotnikov, and M. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photon. Rev. 3(5), 407–434 (2009). [CrossRef]
4.	N. Schulz, J. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photon. Rev. 2(3), 160–181 (2008). [CrossRef]
5.	H. Lindberg, M. Strassner, E. Gerster, J. Bengtsson, and A. Larsson, “Thermal management of optically pumped long-wavelength InP-based semiconductor disk lasers,” IEEE J. Sel. Top. Quantum Electron. 11(5), 1126–1134 (2005). [CrossRef]
6.	A. Kemp, G. Valentine, J. Hopkins, J. Hastie, S. Smith, S. Calvez, M. Dawson, and D. Burns, “Thermal management in vertical-external-cavity surface-emitting lasers: Finite-element analysis of a heatspreader approach,” IEEE J. Quantum Electron. 41(2), 148–155 (2005). [CrossRef]
7.	A. Kemp, J. Hopkins, A. Maclean, N. Schulz, M. Rattunde, J. Wagner, and D. Burns, “Thermal management in 2.3-µm semiconductor disk lasers: a finite element analysis,” IEEE J. Quantum Electron. 44(2), 125–135 (2008). [CrossRef]
8.	A. Ouvrard, A. Garnac, L. Cerutti, F. Genty, and D. Romanini, “Single-frequency tunable Sb-based VCSELs emitting at 2.3 µm,” IEEE Photon. Technol. Lett. 17(10), 2020–2022 (2005). [CrossRef]
9.	A. Garnache, A. Ouvrard, L. Cerutti, D. Barat, A. Vicet, F. Genty, Y. Rouillard, D. Romanini, and E. Cerda-Mendez, “2–2.7 µm single frequency tunable Sb-based lasers operating in CW at RT: Microcavity and External–cavity VCSELs, DFB,” Proc. SPIE 6184, 61840N, 61840N-15 (2006). [CrossRef]
10.	A. Garnache, A. Ouvrard, and D. Romanini, “Single-frequency operation of external-cavity VCSELs: non-linear multimode temporal dynamics and quantum limit,” Opt. Express 15(15), 9403–9417 (2007). [CrossRef] [PubMed]
11.	C. Spiegelberg, J. Geng, Y. Hu, Y. Kaneda, S. Jiang, and N. Peyghambarian, “Low-noise narrow-linewidth fiber laser at 1550 nm,” J. Lightwave Technol. 22(1), 57–62 (2004). [CrossRef]
12.	S. Spießberger, M. Schiemangk, A. Sahm, A. Wicht, H. Wenzel, A. Peters, G. Erbert, and G. Tränkle, “Micro-integrated 1 Watt semiconductor laser system with a linewidth of 3.6 kHz,” Opt. Express 19(8), 7077–7083 (2011). [CrossRef] [PubMed]
13.	A. Laurain, M. Myara, G. Beaudoin, I. Sagnes, and A. Garnache, “Multiwatt-power highly-coherent compact single-frequency tunable Vertical-External-Cavity-Surface-Emitting-Semiconductor-Laser,” Opt. Express 18(14), 14627–14636 (2010). [CrossRef] [PubMed]
14.	F. Camargo, S. Janicot, I. Sagnes, A. Garnache, P. Georges, and G. Lucas-Leclin, “Evaluation of the single-frequency operation of a short vertical external-cavity semiconductor laser at 852 nm,” Proc. SPIE 8242, 82420F (2012). [CrossRef]
15.	M. Jacquemet, M. Domenech, G. Lucas-Leclin, P. Georges, J. Dion, M. Strassner, I. Sagnes, and A. Garnache, “Single-frequency CW vertical external cavity surface emitting semiconductor laser at 1003 nm and 501 nm by intracavity frequency doubling,” Appl. Phys. B 86(3), 503–510 (2007). [CrossRef]
16.	R. Abram, K. Gardner, E. Riis, and A. Ferguson, “Narrow linewidth operation of a tunable optically pumped semiconductor laser,” Opt. Express 12(22), 5434–5439 (2004). [CrossRef] [PubMed]
17.	Y. Kaneda, M. Fallahi, J. Hader, J. V. Moloney, S. W. Koch, B. Kunert, and W. Stoltz, “Continuous-wave single-frequency 295 nm laser source by a frequency-quadrupled optically pumped semiconductor laser,” Opt. Lett. 34(22), 3511–3513 (2009). [CrossRef] [PubMed]
18.	B. Rösener, S. Kaspar, M. Rattunde, T. Töpper, C. Manz, K. Köhler, O. Ambacher, and J. Wagner, “2 μm semiconductor disk laser with a heterodyne linewidth below 10 kHz,” Opt. Lett. 36(18), 3587–3589 (2011). [CrossRef] [PubMed]
19.	A. Laurain, L. Cerutti, M. Myara, and A. Garnache, “2.7 µm single-frequency TEM₀₀ operation of Sb-based diode-pumped external-cavity VCSEL,” Proc. SPIE 8242, 82420 L –82421 (2012).
20.	C. Symonds, J. Dion, I. Sagnes, M. Dainese, M. Strassner, L. Leroy, and J. Oudar, “High performance 1.55 µm vertical external cavity surface emitting laser with broad-band integrated dielectric-metal mirror,” Electron. Lett. 40(12), 734–735 (2004). [CrossRef]
21.	H. Lindberg, M. Strassner, J. Bengtsson, and A. Larsson, “InP-based optically pumped VECSEL operating CW at 1550 nm,” IEEE Photon. Technol. Lett. 16(2), 362–364 (2004). [CrossRef]
22.	H. Lindberg, M. Strassner, J. Bengtsson, and A. Larsson, “High-power optically pumped 1550-nm VECSEL with a bonded silicon heat spreader,” IEEE Photon. Technol. Lett. 16(5), 1233–1235 (2004). [CrossRef]
23.	H. Lindberg, M. Strassner, E. Gerster, and A. Larsson, “0.8 W optically pumped vertical external cavity surface emitting laser operating CW at 1550 nm,” Electron. Lett. 40(10), 601–602 (2004). [CrossRef]
24.	H. Lindberg, A. Larsson, and M. Strassner, “Single-frequency operation of a high-power, long-wavelength semiconductor disk laser,” Opt. Lett. 30(17), 2260–2262 (2005). [CrossRef] [PubMed]
25.	J. Lyytikäinen, J. Rautiainen, L. Toikkanen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “1.3-microm optically-pumped semiconductor disk laser by wafer fusion,” Opt. Express 17(11), 9047–9052 (2009). [CrossRef] [PubMed]
26.	J. Lyytikäinen, J. Rautiainen, A. Sirbu, V. Iakovlev, N. Laakso, S. Ranta, M. Tavast, E. Kapon, and O. Okhotnikov, “High-power 1.48-µm wafer-fused optically pumped semiconductor disk laser,” IEEE Photon. Technol. Lett. 23(13), 917–919 (2011). [CrossRef]
27.	J. Rautiainen, J. Lyytikäinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. Okhotnikov, “2.6 W optically-pumped semiconductor disk laser operating at 1.57-µm using wafer fusion,” Opt. Express 16(26), 21881–21886 (2008).
28.	A. Rantamäki, A. Sirbu, A. Mereuta, E. Kapon, and O. Okhotnikov, “3 W of 650 nm red emission by frequency doubling of wafer-fused semiconductor disk laser,” Opt. Express 18(21), 21645–21650 (2010).
29.	A. Rantamäki, J. Rautiainen, J. Lyytikäinen, A. Sirbu, A. Mereuta, E. Kapon, and O. G. Okhotnikov, “1 W at 785 nm from a frequency-doubled wafer-fused semiconductor disk laser,” Opt. Express 20(8), 9046–9051 (2012). [CrossRef] [PubMed]
30.	A. Sirbu, N. Volet, A. Mereuta, J. Lyytikäinen, J. Rautiainen, O. Okhotnikov, J. Walczak, M. Wasiak, T. Czyszanowski, and A. Caliman, “Wafer-fused optically pumped VECSELs emitting in the 1310-nm and 1550-nm wavebands,” Adv. Opt. Technol. 2011, 209093 (2011).
31.	Z. L. Liau, “Semiconductor wafer bonding via liquid capillarity,” Appl. Phys. Lett. 77(5), 651–653 (2000). [CrossRef]
32.	M. Guina, T. Leinonen, A. Härkönen, and M. Pessa, “High-power disk lasers based on dilute nitride heterostructures,” New J. Phys. 11(12), 125019 (2009). [CrossRef]
33.	R. Paschotta, “Beam quality deterioration of lasers caused by intracavity beam distortions,” Opt. Express 14(13), 6069–6074 (2006). [CrossRef] [PubMed]
34.	T. Okoshi, K. Kikuchi, and A. Nakayama, “Novel method for high resolution measurement of laser output spectrum,” Electron. Lett. 16(16), 630–631 (1980). [CrossRef]
35.	L. Richter, H. Mandelberg, M. Kruger, and P. McGrath, “Linewidth determination from self-heterodyne measurements with subcoherence delay times,” IEEE J. Quantum Electron. 22(11), 2070–2074 (1986). [CrossRef]
36.	M. van Exter, S. Kuppens, and J. Woerdman, “Excess phase noise in self-heterodyne detection,” IEEE J. Quantum Electron. 28(3), 580–584 (1992). [CrossRef]
37.	J. Geng, C. Spiegelberg, and S. Jiang, “Narrow linewidth fiber laser for 100-km optical frequency domain reflectometry,” IEEE Photon. Technol. Lett. 17(9), 1827–1829 (2005). [CrossRef]
38.	L. B. Mercer, “1/f frequency noise effects on self-heterodyne linewidth measurements,” J. Lightwave Technol. 9(4), 485–493 (1991). [CrossRef]
39.	J. P. Tourrenc, P. Signoret, M. Myara, M. Bellon, J. P. Perez, J. M. Gosalbes, R. Alabedra, and B. Orsal, “Low-frequency FM-noise-induced lineshape: a theoretical and experimental approach,” IEEE J. Quantum Electron. 41(4), 549–553 (2005). [CrossRef]
40.	S. Viciani, M. Gabrysch, F. Marin, F. M. Sopra, M. Moser, and K. H. Gulden, “Lineshape of a vertical cavity surface emitting laser,” Opt. Commun. 206(1), 89–97 (2002). [CrossRef]
41.	A. Garnache, M. Myara, A. Laurain, A. Bouchier, J. Perez, P. Signoret, I. Sagnes, and D. Romanini, “Single frequency free-running low noise compact extended-cavity semiconductor laser at high power level,” Proc. Int. Conf. Space Opt. S17, 257–258 (2008). http://www.congrexprojects.com/icso/2008-proceedings-ppts.

OCIS Codes
(140.3480) Lasers and laser optics : Lasers, diode-pumped
(140.3570) Lasers and laser optics : Lasers, single-mode
(140.5960) Lasers and laser optics : Semiconductor lasers

ToC Category:
Lasers and Laser Optics

History
Original Manuscript: December 11, 2012
Revised Manuscript: January 14, 2013
Manuscript Accepted: January 14, 2013
Published: January 23, 2013

Citation
Antti Rantamäki, Jussi Rautiainen, Alexei Sirbu, Alexandru Mereuta, Eli Kapon, and Oleg G. Okhotnikov, "1.56 µm 1 watt single frequency semiconductor disk laser," Opt. Express 21, 2355-2360 (2013)
http://www.opticsinfobase.org/oe/abstract.cfm?URI=oe-21-2-2355

Sort: Author | Year | Journal | Reset

References

O. Okhotnikov, “Semiconductor disk lasers,” in Physics and Technology (Wiley-VCH, 2010).
A. Maclean, R. Birch, P. Roth, A. Kemp, and D. Burns, “Limits on efficiency and power scaling in semiconductor disk lasers with diamond heatspreaders,” J. Opt. Soc. Am. B26(12), 2228–2236 (2009). [CrossRef]
S. Calvez, J. Hastie, M. Guina, O. Okhotnikov, and M. Dawson, “Semiconductor disk lasers for the generation of visible and ultraviolet radiation,” Laser Photon. Rev.3(5), 407–434 (2009). [CrossRef]
N. Schulz, J. Hopkins, M. Rattunde, D. Burns, and J. Wagner, “High-brightness long-wavelength semiconductor disk lasers,” Laser Photon. Rev.2(3), 160–181 (2008). [CrossRef]
H. Lindberg, M. Strassner, E. Gerster, J. Bengtsson, and A. Larsson, “Thermal management of optically pumped long-wavelength InP-based semiconductor disk lasers,” IEEE J. Sel. Top. Quantum Electron.11(5), 1126–1134 (2005). [CrossRef]
A. Kemp, G. Valentine, J. Hopkins, J. Hastie, S. Smith, S. Calvez, M. Dawson, and D. Burns, “Thermal management in vertical-external-cavity surface-emitting lasers: Finite-element analysis of a heatspreader approach,” IEEE J. Quantum Electron.41(2), 148–155 (2005). [CrossRef]
A. Kemp, J. Hopkins, A. Maclean, N. Schulz, M. Rattunde, J. Wagner, and D. Burns, “Thermal management in 2.3-µm semiconductor disk lasers: a finite element analysis,” IEEE J. Quantum Electron.44(2), 125–135 (2008). [CrossRef]
A. Ouvrard, A. Garnac, L. Cerutti, F. Genty, and D. Romanini, “Single-frequency tunable Sb-based VCSELs emitting at 2.3 µm,” IEEE Photon. Technol. Lett.17(10), 2020–2022 (2005). [CrossRef]
A. Garnache, A. Ouvrard, L. Cerutti, D. Barat, A. Vicet, F. Genty, Y. Rouillard, D. Romanini, and E. Cerda-Mendez, “2–2.7 µm single frequency tunable Sb-based lasers operating in CW at RT: Microcavity and External–cavity VCSELs, DFB,” Proc. SPIE6184, 61840N, 61840N-15 (2006). [CrossRef]
A. Garnache, A. Ouvrard, and D. Romanini, “Single-frequency operation of external-cavity VCSELs: non-linear multimode temporal dynamics and quantum limit,” Opt. Express15(15), 9403–9417 (2007). [CrossRef] [PubMed]
C. Spiegelberg, J. Geng, Y. Hu, Y. Kaneda, S. Jiang, and N. Peyghambarian, “Low-noise narrow-linewidth fiber laser at 1550 nm,” J. Lightwave Technol.22(1), 57–62 (2004). [CrossRef]
S. Spießberger, M. Schiemangk, A. Sahm, A. Wicht, H. Wenzel, A. Peters, G. Erbert, and G. Tränkle, “Micro-integrated 1 Watt semiconductor laser system with a linewidth of 3.6 kHz,” Opt. Express19(8), 7077–7083 (2011). [CrossRef] [PubMed]
A. Laurain, M. Myara, G. Beaudoin, I. Sagnes, and A. Garnache, “Multiwatt-power highly-coherent compact single-frequency tunable Vertical-External-Cavity-Surface-Emitting-Semiconductor-Laser,” Opt. Express18(14), 14627–14636 (2010). [CrossRef] [PubMed]
F. Camargo, S. Janicot, I. Sagnes, A. Garnache, P. Georges, and G. Lucas-Leclin, “Evaluation of the single-frequency operation of a short vertical external-cavity semiconductor laser at 852 nm,” Proc. SPIE8242, 82420F (2012). [CrossRef]
M. Jacquemet, M. Domenech, G. Lucas-Leclin, P. Georges, J. Dion, M. Strassner, I. Sagnes, and A. Garnache, “Single-frequency CW vertical external cavity surface emitting semiconductor laser at 1003 nm and 501 nm by intracavity frequency doubling,” Appl. Phys. B86(3), 503–510 (2007). [CrossRef]
R. Abram, K. Gardner, E. Riis, and A. Ferguson, “Narrow linewidth operation of a tunable optically pumped semiconductor laser,” Opt. Express12(22), 5434–5439 (2004). [CrossRef] [PubMed]
Y. Kaneda, M. Fallahi, J. Hader, J. V. Moloney, S. W. Koch, B. Kunert, and W. Stoltz, “Continuous-wave single-frequency 295 nm laser source by a frequency-quadrupled optically pumped semiconductor laser,” Opt. Lett.34(22), 3511–3513 (2009). [CrossRef] [PubMed]
B. Rösener, S. Kaspar, M. Rattunde, T. Töpper, C. Manz, K. Köhler, O. Ambacher, and J. Wagner, “2 μm semiconductor disk laser with a heterodyne linewidth below 10 kHz,” Opt. Lett.36(18), 3587–3589 (2011). [CrossRef] [PubMed]
A. Laurain, L. Cerutti, M. Myara, and A. Garnache, “2.7 µm single-frequency TEM00 operation of Sb-based diode-pumped external-cavity VCSEL,” Proc. SPIE8242, 82420 L –82421 (2012).
C. Symonds, J. Dion, I. Sagnes, M. Dainese, M. Strassner, L. Leroy, and J. Oudar, “High performance 1.55 µm vertical external cavity surface emitting laser with broad-band integrated dielectric-metal mirror,” Electron. Lett.40(12), 734–735 (2004). [CrossRef]
H. Lindberg, M. Strassner, J. Bengtsson, and A. Larsson, “InP-based optically pumped VECSEL operating CW at 1550 nm,” IEEE Photon. Technol. Lett.16(2), 362–364 (2004). [CrossRef]
H. Lindberg, M. Strassner, J. Bengtsson, and A. Larsson, “High-power optically pumped 1550-nm VECSEL with a bonded silicon heat spreader,” IEEE Photon. Technol. Lett.16(5), 1233–1235 (2004). [CrossRef]
H. Lindberg, M. Strassner, E. Gerster, and A. Larsson, “0.8 W optically pumped vertical external cavity surface emitting laser operating CW at 1550 nm,” Electron. Lett.40(10), 601–602 (2004). [CrossRef]
H. Lindberg, A. Larsson, and M. Strassner, “Single-frequency operation of a high-power, long-wavelength semiconductor disk laser,” Opt. Lett.30(17), 2260–2262 (2005). [CrossRef] [PubMed]
J. Lyytikäinen, J. Rautiainen, L. Toikkanen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. G. Okhotnikov, “1.3-microm optically-pumped semiconductor disk laser by wafer fusion,” Opt. Express17(11), 9047–9052 (2009). [CrossRef] [PubMed]
J. Lyytikäinen, J. Rautiainen, A. Sirbu, V. Iakovlev, N. Laakso, S. Ranta, M. Tavast, E. Kapon, and O. Okhotnikov, “High-power 1.48-µm wafer-fused optically pumped semiconductor disk laser,” IEEE Photon. Technol. Lett.23(13), 917–919 (2011). [CrossRef]
J. Rautiainen, J. Lyytikäinen, A. Sirbu, A. Mereuta, A. Caliman, E. Kapon, and O. Okhotnikov, “2.6 W optically-pumped semiconductor disk laser operating at 1.57-µm using wafer fusion,” Opt. Express16(26), 21881–21886 (2008).
A. Rantamäki, A. Sirbu, A. Mereuta, E. Kapon, and O. Okhotnikov, “3 W of 650 nm red emission by frequency doubling of wafer-fused semiconductor disk laser,” Opt. Express18(21), 21645–21650 (2010).
A. Rantamäki, J. Rautiainen, J. Lyytikäinen, A. Sirbu, A. Mereuta, E. Kapon, and O. G. Okhotnikov, “1 W at 785 nm from a frequency-doubled wafer-fused semiconductor disk laser,” Opt. Express20(8), 9046–9051 (2012). [CrossRef] [PubMed]
A. Sirbu, N. Volet, A. Mereuta, J. Lyytikäinen, J. Rautiainen, O. Okhotnikov, J. Walczak, M. Wasiak, T. Czyszanowski, and A. Caliman, “Wafer-fused optically pumped VECSELs emitting in the 1310-nm and 1550-nm wavebands,” Adv. Opt. Technol.2011, 209093 (2011).
Z. L. Liau, “Semiconductor wafer bonding via liquid capillarity,” Appl. Phys. Lett.77(5), 651–653 (2000). [CrossRef]
M. Guina, T. Leinonen, A. Härkönen, and M. Pessa, “High-power disk lasers based on dilute nitride heterostructures,” New J. Phys.11(12), 125019 (2009). [CrossRef]
R. Paschotta, “Beam quality deterioration of lasers caused by intracavity beam distortions,” Opt. Express14(13), 6069–6074 (2006). [CrossRef] [PubMed]
T. Okoshi, K. Kikuchi, and A. Nakayama, “Novel method for high resolution measurement of laser output spectrum,” Electron. Lett.16(16), 630–631 (1980). [CrossRef]
L. Richter, H. Mandelberg, M. Kruger, and P. McGrath, “Linewidth determination from self-heterodyne measurements with subcoherence delay times,” IEEE J. Quantum Electron.22(11), 2070–2074 (1986). [CrossRef]
M. van Exter, S. Kuppens, and J. Woerdman, “Excess phase noise in self-heterodyne detection,” IEEE J. Quantum Electron.28(3), 580–584 (1992). [CrossRef]
J. Geng, C. Spiegelberg, and S. Jiang, “Narrow linewidth fiber laser for 100-km optical frequency domain reflectometry,” IEEE Photon. Technol. Lett.17(9), 1827–1829 (2005). [CrossRef]
L. B. Mercer, “1/f frequency noise effects on self-heterodyne linewidth measurements,” J. Lightwave Technol.9(4), 485–493 (1991). [CrossRef]
J. P. Tourrenc, P. Signoret, M. Myara, M. Bellon, J. P. Perez, J. M. Gosalbes, R. Alabedra, and B. Orsal, “Low-frequency FM-noise-induced lineshape: a theoretical and experimental approach,” IEEE J. Quantum Electron.41(4), 549–553 (2005). [CrossRef]
S. Viciani, M. Gabrysch, F. Marin, F. M. Sopra, M. Moser, and K. H. Gulden, “Lineshape of a vertical cavity surface emitting laser,” Opt. Commun.206(1), 89–97 (2002). [CrossRef]
A. Garnache, M. Myara, A. Laurain, A. Bouchier, J. Perez, P. Signoret, I. Sagnes, and D. Romanini, “Single frequency free-running low noise compact extended-cavity semiconductor laser at high power level,” Proc. Int. Conf. Space Opt. S17, 257–258 (2008). http://www.congrexprojects.com/icso/2008-proceedings-ppts .

Cited By

Alert me when this paper is cited

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.

Click here to see a list of articles that cite this paper