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Optics Letters

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  • Vol. 19, Iss. 10 — May. 15, 1994
  • pp: 731–733

Carrier deficit from the nominal threshold density and mode-suppression ratio of an above-threshold biased semiconductor laser

G. Xia, Z. Wu, J. Chen, and Y. Lu  »View Author Affiliations


Optics Letters, Vol. 19, Issue 10, pp. 731-733 (1994)
http://dx.doi.org/10.1364/OL.19.000731


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Abstract

An analytical expression for the carrier deficit ΔN from the nominal threshold carrier density Nt of an above-threshold biased semiconductor laser has been deduced. As a result, both the mode spectra and the mode-suppression ratio of a semiconductor laser can be studied analytically. The measured dependence of the mode-suppression ratio on the wavelength difference between the gain peak and its nearest cavity mode of the semiconductor laser confirms the theoretical predictions.

© 1994 Optical Society of America

History
Original Manuscript: November 18, 1993
Published: May 15, 1994

Citation
G. Xia, Z. Wu, J. Chen, and Y. Lu, "Carrier deficit from the nominal threshold density and mode-suppression ratio of an above-threshold biased semiconductor laser," Opt. Lett. 19, 731-733 (1994)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-19-10-731


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References

  1. T. Lee, C. A. Burrus, J. A. Copeland, A. G. Dentai, D. Marcuse, IEEE J. Quantum Electron. QE-18, 1101 (1982).
  2. B. Luo, L. Wu, J. Chen, Y. Lu, “Determination of wavelength dependence of the reflectivity at AR-coated diode facets,” IEEE Photon. Technol. Lett. (to be published).
  3. L. Thylen, IEEE J. Quantum Electron. 24, 1532 (1988). [CrossRef]
  4. G. P. Agrawal, N. K. Dutta, Long-Wavelength Semiconductor Laser (Van Nostrand Reinhold. New York, 1986).
  5. K. Kishino, S. Aoki, Y. Suemaysu, IEEE J. Quantum Electron. QE-18, 343 (1982). [CrossRef]

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