An analytical expression for the carrier deficit ΔN from the nominal threshold carrier density Nt of an above-threshold biased semiconductor laser has been deduced. As a result, both the mode spectra and the mode-suppression ratio of a semiconductor laser can be studied analytically. The measured dependence of the mode-suppression ratio on the wavelength difference between the gain peak and its nearest cavity mode of the semiconductor laser confirms the theoretical predictions.
© 1994 Optical Society of America
Original Manuscript: November 18, 1993
Published: May 15, 1994
G. Xia, Z. Wu, J. Chen, and Y. Lu, "Carrier deficit from the nominal threshold density and mode-suppression ratio of an above-threshold biased semiconductor laser," Opt. Lett. 19, 731-733 (1994)