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Optics Letters

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  • Vol. 19, Iss. 11 — Jun. 1, 1994
  • pp: 822–824

Photorefractive phase shift induced by nonlinear electronic transport

Q. N. Wang, R. M. Brubaker, and D. D. Nolte  »View Author Affiliations


Optics Letters, Vol. 19, Issue 11, pp. 822-824 (1994)
http://dx.doi.org/10.1364/OL.19.000822


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Abstract

A photorefractive phase shift can be generated under dc applied fields if the dominant photocarriers have a nonlinear velocity-field dependence with a vanishing differential mobility. Phase shifts as large as π/2 are possible when velocity saturation disables dielectric relaxation while still permitting large drift rates. The inability of the space-charge field to relax leads to a saturated trap density that mimics trap-limited behavior. All direct-gap photorefractive semiconductors have strong velocity saturation from hot-electron transport effects, most widely known for the origin of the Gunn effect. Previous photorefractive trap-limited-field studies may have to be reevaluated in the context of transport nonlinearity.

© 1994 Optical Society of America

History
Original Manuscript: February 18, 1994
Published: June 1, 1994

Citation
Q. N. Wang, R. M. Brubaker, and D. D. Nolte, "Photorefractive phase shift induced by nonlinear electronic transport," Opt. Lett. 19, 822-824 (1994)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-19-11-822


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References

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