Optical dephasing measurements are reported for Tm3+:Y2Si2O7 as a function of temperature and laser excitation intensity. By use of photon echoes, a coherence time of T2 = 23 µs was measured at 1.24 K for the 3H6(1) → 3H4(1) transition at 790.427 nm, corresponding to a homogeneous linewidth of 14 kHz. The relatively broad inhomogeneous linewidth of 100 GHz gives an inhomogeneous-to-homogeneous linewidth ratio of Γinh/Γh = 7 × 106. This large ratio, a transition wavelength suitable for GaAlAs semiconductor lasers, and the absence of hyperfine structure hole burning make this material a good candidate for time-domain signal processing and transient optically addressed data storage.
© 1996 Optical Society of America
G. M. Wang, R. W. Equall, R. L. Cone, M. J. M. Leask, K. W. Godfrey, and F. R. Wondre, "Optical dephasing mechanisms in Tm3+:Y2Si2O7," Opt. Lett. 21, 818-820 (1996)