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Optics Letters

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  • Vol. 21, Iss. 16 — Aug. 15, 1996
  • pp: 1244–1246

Q switching of a diode-pumped Nd:YAG laser with GaAs

T. T. Kajava and Alexander L. Gaeta  »View Author Affiliations


Optics Letters, Vol. 21, Issue 16, pp. 1244-1246 (1996)
http://dx.doi.org/10.1364/OL.21.001244


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Abstract

We investigated the properties of a diode-pumped Nd:YAG laser that is passively Q switched by a thin, single-crystal GaAs wafer. At 3 W of incident pump power, the laser produced stable 7-ns pulses with 20 μJ of energy at a 6-kHz repetition rate. For pump powers up to 2.2 W, which resulted in 13.2-μJ pulses, the output mode was TEM00. The shortest pulses that we observed were 3 ns in duration. In addition to saturable absorption, we find that two-photon absorption and free-carrier effects determine pulse formation.

© 1996 Optical Society of America

History
Original Manuscript: February 20, 1996
Published: August 15, 1996

Citation
T. T. Kajava and Alexander L. Gaeta, "Q switching of a diode-pumped Nd:YAG laser with GaAs," Opt. Lett. 21, 1244-1246 (1996)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-21-16-1244


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