Amorphous silicon waveguides and light modulators for integrated photonics realized by low-temperature plasma-enhanced chemical-vapor deposition
Optics Letters, Vol. 21, Issue 24, pp. 2002-2004 (1996)
http://dx.doi.org/10.1364/OL.21.002002
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Abstract
A new amorphous silicon waveguide is realized by use of amorphous silicon carbon as cladding material. The structure is characterized both experimentally and theoretically, and its application for optical interconnections in photonic integrated circuits on silicon motherboards is proposed. The fabrication process is based on low-temperature (220°C) plasma-enhanced chemical-vapor deposition and is compatible with standard microelectronic processes. Propagation losses of 1.8 dB/cm have been measured at the fiber-optic wavelength of 1.3 µm. A strong thermo-optic coefficient has been measured in this material at this wavelength and exploited for the realization of a light-intensity modulator based on a Fabry—Perot interferometer that is tunable by temperature.
© 1996 Optical Society of America
Citation
G. Cocorullo, F. G. Della Corte, I. Rendina, C. Minarini, A. Rubino, and E. Terzini, "Amorphous silicon waveguides and light modulators for integrated photonics realized by low-temperature plasma-enhanced chemical-vapor deposition," Opt. Lett. 21, 2002-2004 (1996)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-21-24-2002
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