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Optics Letters

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  • Vol. 23, Iss. 5 — Mar. 1, 1998
  • pp: 376–378

Intraband carrier kinetics and picosecond pulse shaping in field-enhanced bulk semiconductor absorbers

A. V. Uskov, J. McInerney, J. R. Karin, and J. E. Bowers  »View Author Affiliations


Optics Letters, Vol. 23, Issue 5, pp. 376-378 (1998)
http://dx.doi.org/10.1364/OL.23.000376


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Abstract

Picosecond pulse propagation through a field-enhanced waveguide bulk semiconductor saturable absorber is studied numerically. Fast switching from unsaturated absorption to delayed strong saturation and gain, as well as the predicted dependence of saturation energy on electric field, is based on intraband carrier kinetics and electric-field dynamics in the absorber and can lead to improved, controllable pulse shaping.

© 1998 Optical Society of America

OCIS Codes
(140.6630) Lasers and laser optics : Superradiance, superfluorescence
(190.5970) Nonlinear optics : Semiconductor nonlinear optics including MQW
(320.5390) Ultrafast optics : Picosecond phenomena
(320.5540) Ultrafast optics : Pulse shaping

Citation
A. V. Uskov, J. McInerney, J. R. Karin, and J. E. Bowers, "Intraband carrier kinetics and picosecond pulse shaping in field-enhanced bulk semiconductor absorbers," Opt. Lett. 23, 376-378 (1998)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-23-5-376


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