High photosensitivity and nanometer-scale phase separation in GeO2-SiO2 glass thin films
Optics Letters, Vol. 24, Issue 19, pp. 1352-1354 (1999)
http://dx.doi.org/10.1364/OL.24.001352
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Abstract
Amorphous xGeO2–(1-x)SiO2 thin films exhibit large negative index changes (4–8%) in the high GeO2 region (x>~0.25) on irradiation with ArF laser pulses. The sign of the index change is opposite the low GeO2 region X<0.25, and the magnitude of the index change is larger by an order of magnitude than that reported so far. Cross-sectional transmission electron microscope observation has revealed that nanometer-scale phase separation is induced in these highly photosensitive glasses by irradiation with ArF excimer laser light pulses or electron beams. This is a first finding of microphase separation in SiO2–GeO2 glasses by irradiation and provides an essential constraint on the modeling of photonic effects induced by irradiation in these glasses.
© 1999 Optical Society of America
[Optical Society of America ]
OCIS Codes
(160.2750) Materials : Glass and other amorphous materials
(160.5320) Materials : Photorefractive materials
(310.3840) Thin films : Materials and process characterization
(350.3390) Other areas of optics : Laser materials processing
Citation
Hideo Hosono and Junji Nishii, "High photosensitivity and nanometer-scale phase separation in GeO2-SiO2 glass thin films," Opt. Lett. 24, 1352-1354 (1999)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-24-19-1352
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