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Crystallization of GeO2–SiO2 glass by poling with ArF-laser excitation

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Abstract

We report on crystallization of 15.7GeO2·84.3SiO2 (in mol.%) glass by poling with ArF-laser excitation. The UV intensity was 100mJ/cm2/pulse, and the number of shots was 104. The crystallites that were observed in the glass were approximately 1520 µm in diameter. The crystallization feature was dependent on the poling electric field, showing a threshold field of 0.5×105 V/cm, beyond which crystallization occurred.

© 1999 Optical Society of America

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