Low-temperature thermal fixing of holograms in photorefractive La3Ga5SiO14:Pr3+ crystal
Optics Letters, Vol. 24, Issue 20, pp. 1419-1421 (1999)
http://dx.doi.org/10.1364/OL.24.001419
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Abstract
Thermal fixing in a La3Ga 5SiO 14:Pr 3+ photorefractive crystal is demonstrated all the way down to room temperature. This, to our knowledge, is the first report of such an effect in any photorefractive material. From the temperature dependence of the process the activation energy of the carriers involved in the fixing process is measured to be EA=0.89 eV . Further, an effective photorefractive charge density of (1.4±0.2)×1016 cm -3 and Debye screening length of (6.8±0.7)×10-6 cm is measured.
© 1999 Optical Society of America
[Optical Society of America ]
OCIS Codes
(160.5690) Materials : Rare-earth-doped materials
(190.5330) Nonlinear optics : Photorefractive optics
(210.4810) Optical data storage : Optical storage-recording materials
Citation
Thomas Nikolajsen and Per Michael Johansen, "Low-temperature thermal fixing of holograms in photorefractive La3Ga5SiO14:Pr3+ crystal," Opt. Lett. 24, 1419-1421 (1999)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-24-20-1419
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